Order this document by MJH16006A/D SEMICONDUCTOR TECHNICAL DATA 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. Typical Applications: Features: • • • • • • Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits POWER TRANSISTORS 8 AMPERES 500 VOLTS 150 WATTS • Collector–Emitter Voltage — VCEV = 1000 Vdc • Fast Turn–Off Times 80 ns Inductive Fall Time — 100_C (Typ) 120 ns Inductive Crossover Time — 100_C (Typ) 800 ns Inductive Storage Time — 100_C (Typ) • 100_C Performance Specified for: Reverse–Biased SOA with Inductive Load Switching Times with Inductive Loads Saturation Voltages Leakage Currents • Extended FBSOA Rating Using Ultra–fast Rectifiers • Extremely High RBSOA Capability ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ v ÎÎÎÎ MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating VCEO 500 Vdc Collector–Emitter Voltage VCEV 1000 Vdc Emitter–Base Voltage VEB 6 Vdc Collector Current — Continuous — Peak(1) IC ICM 8 16 Adc Base Current — Continuous — Peak(1) IB IBM 6 12 Adc Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above TC = 25_C PD 125 50 1 Watts TJ, Tstg – 55 to 150 _C Symbol Max Unit RθJC 1 _C/W TL 275 _C Operating and Storage Junction Temperature Range CASE 340D–02 W/_C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer’s and SWITCHMODE are trademarks of Motorola, Inc. REV 4 Motorola, Inc. 1996 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v MJH16006A ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 500 — — Vdc — — 0.003 0.020 0.15 1.0 OFF CHARACTERISTICS(1) Collector–Emitter Sustaining Voltage (Table 1) (IC = 100 mA, IB = 0) Collector Cutoff Current (VCEV = 1000 Vdc, VBE(off) = 1.5 Vdc) (VCEV = 1000 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C) ICEV mAdc Collector Cutoff Current (VCE = 1000 Vdc, RBE = 50 Ω, TC = 100_C) ICER — 0.020 1.0 mAdc Emitter Cutoff Current (VEB = 6 Vdc, IC = 0) IEBO — 0.005 0.15 mAdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased Clamped Inductive SOA with Base Reverse Biased IS/b See Figure 14a or 14b RBSOA See Figure 15 ON CHARACTERISTICS(1) Collector–Emitter Saturation Voltage (IC = 3 Adc, IB = 0.6 Adc) (IC = 5 Adc, IB = 1 Adc) (IC = 5 Adc, IB = 1 Adc, TC = 100_C) VCE(sat) Base–Emitter Saturation Voltage (IC = 5 Adc, IB = 1 Adc) (IC = 5 Adc, IB = 1 Adc, TC = 100_C) VBE(sat) DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) Vdc — — — 0.35 0.50 0.60 0.7 1 1.5 — — 1 1 1.5 1.5 hFE 5 8 — — Cob — — 350 pF tsv — 800 2000 ns tfi — 80 200 tc — 120 300 tsv — 1000 — tfi — 90 — tc — 150 — td — 25 100 tr — 400 700 ts — 1400 3000 tf — 175 400 ts — 475 — tf — 100 — Vdc DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 kHz) SWITCHING CHARACTERISTICS Inductive Load (Table 1) Storage Time (TJ = 100_C) Fall Time Crossover Time Storage Time Fall Time (IC = 5 Adc Ad Adc, IB1 = 0.66 Adc,, VBE(off) = 5 Vdc, VCE(pk) = 400 Vdc) (TJ = 1 150 0_C) Crossover Time Resistive Load (Table 2) Delay Time Rise Time Storage Time Fall Time Storage Time ( C = 5 Adc, (I Ad , VCC = 250 Vdc, IB1 = 0.66 0 66 Adc, Adc PW = 30 µs, µ D Duty C l Cycle 2%) ( B2 = 1 (I 1.3 3 Ad Adc,, RB1 = RB2 = 4 Ω) (VBE(off) = 5 Vdc) Fall Time (1) Pulse Test: PW = 300 µs, Duty Cycle 2 ns 2%. Motorola Bipolar Power Transistor Device Data MJH16006A TYPICAL STATIC CHARACTERISTICS VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 100 hFE, DC CURRENT GAIN 50 TJ = 100°C 30 20 25°C 10 5 – 55°C 3 2 1 0.2 0.3 0.5 1 5 2 3 IC, COLLECTOR CURRENT (AMPS) 10 20 10 5 2 1 5 0.5 0.3 0.2 0.1 Figure 1. DC Current Gain 0.2 0.1 1 2 3 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) 10 5 Figure 2. Collector–Emitter Saturation Region 1 2 VBE, BASE–EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) IC/IB = 10 TJ = 25°C 3 8A 0.5 3A 5A 0.3 0.2 1A 0.1 0.1 1.5 1 IC/IB = 10 TJ = 25°C IC/IB = 10 TJ = 100°C 0.5 0.3 0.2 0.2 0.3 0.5 1 2 3 5 0.2 0.3 10 0.5 1 2 3 10 5 IB, BASE CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector–Emitter Saturation Region Figure 4. Base–Emitter Saturation Region 10 k C, CAPACITANCE (pF) Cib TJ = 25°C 1k Cob 100 10 0.1 1 10 100 VR, REVERSE VOLTAGE (VOLTS) 850 Figure 5. Capacitance Motorola Bipolar Power Transistor Device Data 3 MJH16006A TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS IC/IB1 = 5, TC = 75°C, VCE(pk) = 400 V IC/IB1 = 10, TC = 75°C, VCE(pk) = 400 V 3000 3000 VBE(off) = 0 V 2000 t sv, STORAGE TIME (ns) t sv, STORAGE TIME (ns) 2000 2V 1000 5V 700 VBE(off) = 0 V 1000 700 500 500 400 400 2V 5V 300 300 1 2 3 5 7 1 10 IC, COLLECTOR CURRENT (AMPS) Figure 6. Storage Time tfi, COLLECTOR CURRENT FALL TIME (ns) tfi, COLLECTOR CURRENT FALL TIME (ns) 5 7 10 7 10 400 2V 300 0V 5V 200 VBE(off) = 0 V 100 5V 70 2V 50 40 1 2 3 5 7 300 200 2V VBE(off) = 0 V 100 70 5V 50 40 1 10 I *βf = C IB1 IC, COLLECTOR CURRENT (AMPS) 2 3 5 IC, COLLECTOR CURRENT (AMPS) Figure 8. Collector Current Fall Time Figure 9. Collector Current Fall Time 500 500 300 t c , CROSSOVER TIME (ns) t c , CROSSOVER TIME (ns) 3 Figure 7. Storage Time 400 5V 2V 200 VBE(off) = 0 V 100 300 200 2V VBE(off) = 0 V 100 70 70 5V 50 50 1 2 3 5 IC, COLLECTOR CURRENT (AMPS) Figure 10. Crossover Time 4 2 IC, COLLECTOR CURRENT (AMPS) 7 10 1 2 3 5 7 IC, COLLECTOR CURRENT (AMPS) Figure 11. Crossover Time Motorola Bipolar Power Transistor Device Data 10 MJH16006A Table 1. Inductive Load Switching Drive Circuit VCEO(sus) L = 10 mH RB2 = ∞ VCC = 20 Volts +15 1 µF 150 Ω 100 µF 100 Ω MTP8P10 MTP8P10 A +10 MPF930 RB2 50 Ω MTP12N10 MJE210 1 µF 150 Ω Voff *Tektronix AM503 *P6302 or Equivalent Scope — Tektronix 7403 or Equivalent T1 IB2 *IC T1 L T.U.T. MR918 +V *IB Vclamp 0V VCC –V I B2 , REVERSE BASE CURRENT (AMPS) 8 IC(pk) VCE(pk) 90% VCE(pk) tsv 90% IC(pk) trv tfi tti tc 10% VCE(pk) VCE IB IB1 IB A (ICpk) [ LcoilVCC T1 adjusted to obtain IC(pk) Note: Adjust Voff to obtain desired VBE(off) at Point A. IC VCE RBSOA L = 750 µH RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 MUR105 500 µF VCE(pk) Inductive Switching L = 750 µH RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 RB1 MPF930 IC(pk) IC 90% IB1 10% IC(pk) 2% IC 6 IB1 = 1 A 4 0.5 A 0 t, TIME IC = 5 A TJ = 25°C 2 0 2 4 6 VBE(off), REVERSE BASE VOLTAGE (VOLTS) Figure 12. Inductive Switching Measurements 8 Figure 13. Peak Reverse Base Current Table 2. Resistive Load Switching +15 td and tr H.P. 214 OR EQUIV. P.G. ts and tf 1 µF 150 Ω 100 µF 100 Ω MTP8P10 MTP8P10 *IC *IB T.U.T. RB = 8.5 Ω RL 50 V(off) adjusted to give specified off drive RB1 MPF930 A +10 V MPF930 VCC RB2 50 Ω MUR105 MTP12N10 Vin ≈ 11 V 0V tr ≤ 15 ns VCC 250 V RL 50 Ω IC 5A IB 0.66 A MJE210 500 µF 1 µF 150 Ω Voff T.U.T. A *IB *Tektronix AM503 *P6302 or Equivalent Motorola Bipolar Power Transistor Device Data RL 50 Ω *IC RL VCC 5 MJH16006A GUARANTEED SAFE OPERATING AREA LIMITS ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ 20 TC = 25°C 1 dc BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN 0.5 0.3 0.2 0.1 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 10 µs 1 ms 5 3 2 II REGION II — EXPANDED FBSOA USING REGION II — MUR8100 ULTRA–FAST REGION II — RECTIFIER, SEE FIGURE 17 0.02 0.1 ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ 20 100 ns 10 100 ns 10 TC = 25°C 5 3 2 1 ms 1 REGION II — EXPANDED FBSOA USING MUR8100 ULTRA–FAST RECTIFIER, SEE FIGURE 17 0.5 0.3 0.2 0.1 dc II BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN 0.02 0.1 1 10 100 1000 2000 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 10 µs 1 10 100 1000 2000 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) a. MJ16006A a. MJH16006A 100 20 POWER DERATING FACTOR (%) IC(pk) , PEAK COLLECTOR CURRENT (AMPS) Figure 14. Maximum Rated Forward Biased Safe Operating Area 16 12 IC/IB1 ≥ 4 TJ ≤ 100°C 8 VBE(off) = 5 V 4 80 SECOND BREAKDOWN DERATING 60 THERMAL DERATING 40 20 VBE(off) = 0 V 0 0 100 200 300 400 500 600 700 800 900 VCE(pk), COLLECTOR–EMITTER VOLTAGE (VOLTS) 100 0 0 0 80 120 TC, CASE TEMPERATURE (°C) 40 Figure 15. Maximum Reverse Biased Safe Operating Area 160 Figure 16. Power Derating VCE (1000 V MAX) +15 150 Ω 1 µF 100 Ω 100 µF 10 µF MTP8P10 MTP8P10 RB1 10 mH MUR8100 MUR1100 MPF930 MUR105 +10 T.U.T. MPF930 RB2 MUR105 50 Ω MTP12N10 MJE210 500 µF 150 Ω 1 µF Note: Test Circuit for Ultra–fast FBSOA Note: RB2 = 0 and VOff = – 5 Volts Voff Figure 17. Switching Safe Operating Area 6 Motorola Bipolar Power Transistor Device Data 200 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJH16006A 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.02 0.03 P(pk) RθJC(t) = r(t) RθJC RθJC = 1.17 or 1°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 0.05 0.01 0.02 t1 SINGLE PULSE 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 20 30 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 100 0 Figure 18. Thermal Response SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 14a and 14b is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figures 14a and 14b may be found at any case temperature by using the appropriate curve on Figure 16. T J(pk) may be calculated from the data in Figure 18. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base–to–emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Biased Safe Operating Area and represents the voltage current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 15 gives the RBSOA characteristics. SWITCHMODE III DESIGN CONSIDERATIONS 1. FBSOA — Allowable dc power dissipation in bipolar power transistors decreases dramatically with increasing collector emitter Motorola Bipolar Power Transistor Device Data voltage. A transistor which safely dissipates 100 watts at 10 volts will typically dissipate less than 10 watts at its rated V CEO(sus). From a power handling point of view, current and voltage are not interchangeable (see Application Note AN875). 2. TURN–ON — Safe turn–on load line excursions are bounded by pulsed FBSOA curves. The 10 µs curve applies for resistive loads, most capacitive loads, and inductive loads that are clamped by standard or fast recovery rectifiers. Similarly, the 100 ns curve applies to inductive loads which are clamped by ultra– fast recovery rectifiers, and are valid for turn–on crossover times less than 100 ns (see Application Note AN952). At voltages above 75% of V CEO(sus), it is essential to provide the transistor with an adequate amount of base drive VERY RAPIDLY at turn–on. More specifically, safe operation according to the curves is dependent upon base current rise time being less than collector current rise time. As a general rule, a base drive compliance voltage in excess of 10 volts is required to meet this condition (see Application Note AN875). 3. TURN–OFF — A bipolar transistor’s ability to withstand turn–off stress is dependent upon its forward base drive. Gross overdrive violates the RBSOA curve and risks transistor failure. For this reason, circuits which use fixed base drive are often more likely to fail at light loads due to heavy overdrive (see Application Note AN875). 4. OPERATION ABOVE VCEO(sus) — When bipolars are operated above collector–emitter breakdown, base drive is crucial. A rapid application of adequate forward base current is needed for safe turn–on, as is a stiff negative bias needed for safe turn–off. Any hiccup in the base–drive circuitry that even momentarily violates either of these conditions will likely cause the transistor to fail. Therefore, it is important to design the driver so that its output is negative in the absence of anything but a clean crisp input signal (see Application Note AN952). 7 MJH16006A SWITCHMODE DESIGN CONSIDERATIONS (Cont.) 5. RBSOA — Reverse Biased Safe Operating Area has a first order dependency on circuit configuration and drive parameters. The RBSOA curves in this data sheet are valid only for the conditions specified. For a comparison of RBSOA results in several types of circuits (see Application Note AN951). 6. DESIGN SAMPLES — Transistor parameters tend to vary much more from wafer lot to wafer lot, over long periods of time, than from one de- 8 vice to the next in the same wafer lot. For design evaluation it is advisable to use transistors from several different date codes. 7. BAKER CLAMPS — Many unanticipated pitfalls can be avoided by using Baker Clamps. MUR105 and MUR1100 diodes are recommended for base drives less than 1 amp. Similarly, MUR405 and MUR4100 types are well–suited for higher drive requirements (see Article Reprint AR131). Motorola Bipolar Power Transistor Device Data MJH16006A PACKAGE DIMENSIONS C Q B U S E 4 A L 1 K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 3 D J H DIM A B C D E G H J K L Q S U V MILLIMETERS MIN MAX ––– 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF ––– 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF INCHES MIN MAX ––– 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF ––– 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 V STYLE 1: PIN 1. 2. 3. 4. G BASE COLLECTOR EMITTER COLLECTOR CASE 340D–02 ISSUE B Motorola Bipolar Power Transistor Device Data 9 MJH16006A Motorola reserves the right to make changes without further notice to any products herein. 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