New Product Si1467DH Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)c 0.090 at VGS = - 4.5 V - 1.6 - 20 0.115 at VGS = - 2.5 V - 1.6 0.150 at VGS = - 1.8 V - 1.6 Qg (Typ.) 9.0 nC • TrenchFET® Power MOSFET • 100 % Rg Tested RoHS APPLICATIONS COMPLIANT • Load Switch for Portable Devices SOT-363 SC-70 (6-LEADS) S 1 6 D D 2 5 D G 3 4 S Marking Code AN XX YY D Lot Traceability and Date Code G Part # Code Top View D Ordering Information: Si1467DH-T1-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C - 1.6c ID - 1.6a, b, c - 1.6a, b, c TA = 70 °C Continuous Source-Drain Diode Currenta, b Maximum Power Dissipationa, b TC = 25 °C TA = 25 °C - 1.6c IS - 1.25a, b, c TC = 25 °C 2.78 TC = 70 °C 1.78 TA = 25 °C PD W 1.5a, b 1a, b TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A - 6.5c IDM Pulsed Drain Current (10 µs Pulse Width) V - 1.6c TC = 25 °C TC = 70 °C Unit - 55 to 150 Soldering Recommendations (Peak Temperature)c, d °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, d Maximum Junction-to-Foot (Drain) Symbol Typical Maximum t≤5s RthJA 60 80 Steady State RthJF 34 45 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. Package limited. d. Maximum under Steady State conditions is 125 °C/W. Document Number: 68663 S-81216-Rev. A, 02-Jun-08 www.vishay.com 1 New Product Si1467DH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea gfs mV/°C - 2.5 - 0.4 - 1.0 V - 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ 5 V, VGS = - 4.5 V RDS(on) V - 20 -3 µA A VGS = - 4.5 V, ID = - 2.0 A 0.073 0.090 VGS = - 2.5 V, ID = - 1.8 A 0.090 0.115 VGS = - 1.8 V, ID = - 1.5 A 0.115 0.150 VDS = - 10 V, ID = - 2.0 A 7 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 561 VDS = - 10 V, VGS = 0 V, f = 1 MHz pF 112 89 9 VDS = - 10 V, VGS = - 4.5 V, ID = - 2.5 A 13.5 1.0 nC 2.5 f = 1 MHz 10 20 16 30 43 75 36 70 tf 18 35 td(on) 7 14 10 20 td(on) VDD = - 10 V, RL = 5 Ω ID ≅ - 2 A, VGEN = - 4.5 V, Rg = 1 Ω tr td(off) VDD = - 10 V, RL = 5 Ω ID ≅ - 2 A, VGEN = - 8 V, Rg = 1 Ω tr td(off) tf 2.0 33 50 10 20 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD - 1.6 - 6.5 IS = - 2 A, VGS = 0 V - 0.78 - 1.2 A V Body Diode Reverse Recovery Time trr 21 35 ns Body Diode Reverse Recovery Charge Qrr 15 25 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 2.0 A, dI/dt = 100 A/µs, TJ = 25 °C 9 12 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68663 S-81216-Rev. A, 02-Jun-08 New Product Si1467DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8.0 2.5 VGS = 2 V VGS = 5 thru 2.5 V 2.0 I D - Drain Current (A) I D - Drain Current (A) 6.4 4.8 VGS = 1.5 V 3.2 1.6 1.5 1.0 TC = 25 °C 0.5 VGS = 0.5 V VGS = 1 V TC = 125 °C TC = - 55 °C 0.6 1.2 1.8 2.4 0.0 0.0 3.0 0.4 0.8 1.2 1.6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 1200 0.16 960 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.0 0.0 VGS = 1.8 V 0.12 VGS = 2.5 V 0.08 VGS = 4.5 V 0.04 2.0 720 Ciss 480 Coss 240 Crss 0.00 0.0 0 1.6 3.2 4.8 6.4 8.0 0 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance ID = 2.5 A ID = - 3 A VDS = 5 V 1.4 VDS = 15 V 4.8 VDS = 10 V 3.2 (Normalized) R DS(on) - On-Resistance 6.4 VGS = - 4.5 V 1.2 VGS = - 1.8 V 1.0 0.8 1.6 0.0 0.0 20 1.6 8.0 VGS - Gate-to-Source Voltage (V) 4 3.4 Document Number: 68663 S-81216-Rev. A, 02-Jun-08 6.8 10.2 13.6 17.0 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 www.vishay.com 3 New Product Si1467DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 0.25 TJ = 150 °C 1 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 2 A 0.1 TJ = 25 °C 0.01 0.001 0.0 0.20 0.15 TJ = 125 °C 0.10 TJ = 25 °C 0.05 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 VSD - Source-to-Drain Voltage (V) 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 30 0.3 24 ID = - 250 µA 0.2 0.1 Power (W) VGS(th) Variance (V) 2 ID = - 5 mA 18 12 0.0 6 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 10 I D - Drain Current (A) Limited by RDS(on)* 1 ms 1 10 ms 100 ms 0.1 1s 10 s DC TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 68663 S-81216-Rev. A, 02-Jun-08 New Product Si1467DH Vishay Siliconix 5 3.5 4 2.8 3 2.1 2 Power (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Package Limited 1.4 0.7 1 0.0 0 0 25 50 75 100 125 0 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating, Junction-to-Foot 150 1.20 Power (W) 0.96 0.72 0.48 0.24 0.00 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68663 S-81216-Rev. A, 02-Jun-08 www.vishay.com 5 New Product Si1467DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125 °C/W 0.02 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68663. www.vishay.com 6 Document Number: 68663 S-81216-Rev. A, 02-Jun-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1