New Product SUD23N06-31 Vishay Siliconix N-Channel 60-V (D-S), MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.031 at VGS = 10 V 9.1 0.045 at VGS = 4.5 V 7.6 VDS (V) 60 Qg (Typ.) 6.5 nC • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • DC/DC Converters TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET Ordering Information: SUD23N06-31-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Continuous Source-Drain Diode Current Limit 60 ± 20 21.4 17.1 V 9.1a 7.6a 50 20.8 A 3.8a 20 20 31.25 20 mJ W 5.7a 3.6a - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Symbol RthJA Typical Maximum t ≤ 10 s 18 22 Steady State RthJC 3.2 4.0 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. Document Number: 68857 S-81948-Rev. A, 25-Aug-08 www.vishay.com 1 New Product SUD23N06-31 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 60 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea gfs mV/°C - 6.3 1.0 3.0 V ± 100 nA VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 70 °C 20 VDS ≥ 5 V, VGS = 10 V RDS(on) V 65 50 µA A VGS = 10 V, ID = 15 A 0.025 0.031 VGS = 4.5 V, ID = 10 A 0.037 0.045 VDS = 15 V, ID = 15 A 20 VDS = 25 V, VGS = 0 V, f = 1 MHz 140 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 670 pF 60 VDS = 30 V, VGS = 10 V, ID = 23 A 11 17 6.5 13 VDS = 30 V, VGS = 4.5 V, ID = 23 A 3.0 f = 1 MHz 1.6 3.2 18 30 250 400 nC 3.0 td(on) VDD = 30 V, RL = 1.3 Ω ID ≅ 23 A, VGEN = 4.5 V, Rg = 1 Ω tr 35 55 tf 68 110 td(on) 8 15 td(off) VDD = 30 V, RL = 1.3 Ω ID ≅ 23 A, VGEN = 10 V, Rg = 1 Ω tr td(off) tf 15 25 30 45 25 40 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 20.8 50 IS = 15 A IF = 15 A, dI/dt = 100 A/µs, TJ = 25 °C A 1.0 1.5 V 30 60 ns 35 70 nC 20 10 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68857 S-81948-Rev. A, 25-Aug-08 New Product SUD23N06-31 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 50 VGS = 10 thru 6 V 5V 8 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 4V 6 4 TC = 25 °C 2 10 TC = 125 °C 3V TC = - 55 °C 0 0 0 2 4 6 8 0 10 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 0.10 32 25 °C 24 RDS(on) - On-Resistance (Ω) g fs - Transconductance (S) TC = - 55 °C 125 °C 16 8 0.08 0.06 VGS = 4.5 V 0.04 VGS = 10 V 0.02 0.00 0 0 5 10 15 20 0 25 10 20 40 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 50 10 1000 VGS - Gate-to-Source Voltage (V) ID = 23 A 800 C - Capacitance (pF) 30 Ciss 600 400 Coss 200 Crss VDS = 15 V 6 VDS = 45 V 4 2 0 0 0 VDS = 30 V 8 10 20 30 40 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 68857 S-81948-Rev. A, 25-Aug-08 50 60 0 2 4 6 8 10 12 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 New Product SUD23N06-31 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 2.1 ID = 15 A VGS = 10 V 10 I S - Source Current (A) (Normalized) R DS(on) - On-Resistance 1.8 1.5 VGS = 4.5 V 1.2 0.9 TJ = 25 °C 1 0.1 TJ = - 50 °C 0.01 0.6 - 50 - 25 0 25 50 75 100 125 0.001 0.0 150 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 0.5 0.2 VGS(th) Variance (V) 0.06 TJ = 125 °C 0.04 0.02 0 1 2 3 4 5 6 7 8 - 0.1 ID = 1 mA - 0.4 ID = 250 µA TJ = 25 °C - 0.7 - 1.0 - 50 0.00 9 10 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) VGS - Gate-to-Source Voltage (V) Threshold Voltage On-Resistance vs. Gate-to-Source Voltage 100 500 10 µs Limited by RDS(on)* 400 100 µs 10 I D - Drain Current (A) Power (W) 1.2 TJ - Junction Temperature (°C) 0.08 R DS(on) - On-Resistance (Ω) TJ = 150 °C 300 200 1 ms 1 10 ms 100 ms, DC 0.1 TC = 25 °C Single Pulse 100 0 0.001 0.01 0.1 1 Time (s) Single Pulse Power, Junction-to-Ambient www.vishay.com 4 10 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Single Pulse Power, Junction-to-Case Document Number: 68857 S-81948-Rev. A, 25-Aug-08 New Product SUD23N06-31 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 I D - Drain Current (A) 20 15 10 5 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating*, Junction-to-Case 3.0 40 2.5 30 Power (W) Power (W) 2.0 20 1.5 1.0 10 0.5 0.0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68857 S-81948-Rev. A, 25-Aug-08 www.vishay.com 5 New Product SUD23N06-31 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 50 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 10 -2 4. Surface Mounted 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68857. www.vishay.com 6 Document Number: 68857 S-81948-Rev. A, 25-Aug-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1