MBRS3200T3 Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Features • • • • • • • Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very High Blocking Voltage − 200 V 150°C Operating Junction Temperature Guard−Ring for Stress Protection Pb−Free Package is Available http://onsemi.com SCHOTTKY BARRIER RECTIFIER 3.0 AMPERE 200 VOLTS Mechanical Charactersistics SMB CASE 403A PLASTIC • Case: Epoxy, Molded, Epoxy Meets UL 94, V−0 • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Cathode Polarity Band Device Meets MSL 1 Requirements ESD Ratings: Machine Model = A ESD Ratings: Human Body Model = 1C MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 V Average Rectified Forward Current (TL = 120 °C) IF(AV) 3.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A Operating Junction Temperature TJ °C −65 to +150 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 3 1 MARKING DIAGRAM AYWW B320G G B320 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MBRS3200T3 SMB 2500/Tape & Reel SMB (Pb−Free) 2500/Tape & Reel MBRS3200T3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: MBRS3200T3/D MBRS3200T3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 2) Symbol Value Unit RqJL RqJA 13 62 °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 3) (IF = 3.0 A, TJ = 25°C) (IF = 4.0 A, TJ = 25°C) (IF = 3.0 A, TJ = 150°C) VF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 150°C) IR V 0.84 0.86 0.59 1.0 5.0 mA mA 1. Minimum pad size (0.108 × 0.085 inch) for each lead on FR4 board. 2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 100 100 TC = 150°C 10 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) TC = 100°C TC = 25°C 1 0.1 TC = 100°C TC = 150°C 10 TC = 25°C 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0.6 0.7 0.8 0.9 1 1.1 Figure 2. Maximum Forward Voltage 1.2 1.0E−01 IR, MAXIMUM REVERSE CURRENT (A) IR, REVERSE CURRENT (A) 0.5 Figure 1. Typical Forward Voltage 1.0E−04 1.0E−02 TC = 100°C TC = 150°C 1.0E−03 1.0E−06 TC = 25°C 1.0E−04 1.0E−07 1.0E−09 0 0.4 VF, INSTANTANEOUS VOLTAGE (V) TC = 150°C 1.0E−08 0.2 0.3 VF, INSTANTANEOUS VOLTAGE (V) 1.0E−03 1.0E−05 1.2 1.0E−05 TC = 25°C 20 40 60 80 100 120 140 160 180 200 1.0E−06 0 VR, REVERSE VOLTAGE (V) 20 40 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current http://onsemi.com 2 MBRS3200T3 IF, AVERAGE FORWARD CURRENT (A) 7 TC = 25°C f = 1 MHz Typical Capacitance at 0 V = 209 V 100 10 0 20 40 60 80 100 120 140 160 180 200 6 dc 5 SQUARE WAVE 4 3 2 1 0 80 90 100 110 120 130 140 150 VR, REVERSE VOLTAGE (V) TL, LEAD TEMPERATURE (°C) Figure 5. Typical Capacitance Figure 6. Current Derating − Lead Pfo, AVERAGE POWER DISSIPATION (W) C, CAPACITANCE (pF) 1000 5 4.5 4 SQUARE WAVE 3.5 dc 3 2.5 2 1.5 1 0.5 0 0 1 2 3 4 5 IO, AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation http://onsemi.com 3 6 160 MBRS3200T3 PACKAGE DIMENSIONS SMB PLASTIC PACKAGE CASE 403A−03 ISSUE E HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. E b DIM A A1 b c D E HE L L1 D MIN 1.90 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.13 2.41 0.10 0.15 2.03 2.11 0.23 0.30 3.56 3.81 4.32 4.57 5.44 5.59 1.02 1.27 0.51 REF MIN 0.075 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.084 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.095 0.006 0.083 0.012 0.150 0.180 0.220 0.050 A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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