ONSEMI MURS210T3

MURS205T3, MURS210T3
Preferred Device
Surface Mount
Ultrafast Power Rectifiers
Ideally suited for high voltage, high frequency rectification, or as
free wheeling and protection diodes in surface mount applications
where compact size and weight are critical to the system.
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•
•
•
•
Small Compact Surface Mountable Package with J–Bend Leads
Rectangular Package for Automated Handling
High Temperature Glass Passivated Junction
Low Forward Voltage Drop (0.74 Volts Max @ 2.0 A, TJ = 150°C)
ULTRAFAST RECTIFIERS
2 AMPERES
50–100 VOLTS
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
•
•
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped in 12 mm Tape and Reel, 2500 units per reel
Polarity: Polarity Band Indicates Cathode Lead
Marking: U2A, U2B
MARKING
DIAGRAM
U2x
SMB
CASE 403A
x = A (205T3)
B (210T3)
ORDERING INFORMATION
Device
Package
Shipping
MURS205T3
SMB
2500 Tape & Reel
MURS210T3
SMB
2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2000
September, 2000 – Rev. 0
1
Publication Order Number:
MURS205T3/D
MURS205T3, MURS210T3
MAXIMUM RATINGS
MURS
Symbol
205T3
210T3
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
Volts
Average Rectified Forward Current
IF(AV)
1.0 @ TL = 150°C
2.0 @ TL = 125°C
Amps
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
IFSM
50
Amps
TJ
65 to +175
°C
RθJL
13
°C/W
Rating
Operating Junction Temperature
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Lead
(TL = 25°C)
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(iF = 2.0 A, TJ = 25°C)
(iF = 2.0 A, TJ = 150°C)
vF
Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 150°C)
iR
Maximum Reverse Recovery Time
(iF = 1.0 A, di/dt = 50 A/µs)
(iF = 0.5 A, iR = 1.0 A, IR to 0.25 A)
trr
Maximum Forward Recovery Time
(iF = 1.0 A, di/dt = 100 A/µs, Rec. to 1.0 V)
tfr
Volts
0.94
0.74
µA
2.0
50
ns
30
20
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%.
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2
20
ns
10
10
7.0
7.0
5.0
5.0
3.0
3.0
175°C
2.0
100°C
1.0
0.7
0.5
25°C
0.3
0.2
0.1
0.07
100°C
1.0
0.7
0.5
TC = 25°C
0.3
0.2
0.1
0.07
0.05
0.05
0.03
0.03
0.02
0.02
0.01
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
175°C
2.0
IF, INSTANTANEOUS FORWARD CURRENT (µA)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
MURS205T3, MURS210T3
0.01
0.3
1.1
vF, INSTANTANEOUS VOLTAGE (VOLTS)
0.5
0.6
0.7
0.8
0.9
1
1.1
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
Figure 1. Typical Forward Voltage
100
100
IR, REVERSE CURRENT (µA)
IR, REVERSE CURRENT (µA)
0.4
TJ = 175°C
10
1
TJ = 100°C
TJ = 25°C
0.1
0.01
0
20
40
60
80
TJ = 175°C
10
TJ = 100°C
1
TJ = 25°C
0.1
0.01
100
VR, REVERSE VOLTAGE (VOLTS)
0
20
40
60
80
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current*
Figure 4. Maximum Reverse Current*
* The curves shown are typical for the highest voltage
device in the voltage grouping. Typical reverse current
for lower voltage selections can be estimated from these
same curves if applied VR is sufficiently below rated VR.
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3
100
MURS205T3, MURS210T3
50
50
NOTE: TYPICAL
CAPACITANCE AT
0 V = 44 V
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
0
0
4
8
12
16
20
24
28
32
36
0
40
8
7
6
dc
4
3
2
SQUARE WAVE
90
16
20
24
28
32
VR, REVERSE VOLTAGE (VOLTS)
9
0
80
12
Figure 6. Maximum Capacitance
RATED VOLTAGE APPLIED
RJC = 13°C/W
TJ = 175°C
1
8
Figure 5. Typical Capacitance
10
5
4
VR, REVERSE VOLTAGE (VOLTS)
PF, AVERAGE POWER DISSIPATION (WATTS)
0
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
NOTE: MAXIMUM
CAPACITANCE AT
0 V = 47 V
45
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
45
100 110 120 130 140 150
160 170 180
36
4
3.5
TJ = 175°C
3
2.5
2
SQUARE WAVE
1.5
1
dc
0.5
0
0
TC, CASE TEMPERATURE (°C)
0.5
1
1.5
2
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 8. Power Dissipation
Figure 7. Current Derating, Case
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4
40
2.5
MURS205T3, MURS210T3
Notes
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5
MURS205T3, MURS210T3
Notes
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6
MURS205T3, MURS210T3
Notes
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7
MURS205T3, MURS210T3
PACKAGE DIMENSIONS
SMB
CASE 403A–03
ISSUE D
S
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
D
B
C
K
P
J
INCHES
DIM MIN
MAX
A
0.160
0.180
B
0.130
0.150
C
0.075
0.095
D
0.077
0.083
H 0.0020 0.0060
J
0.006
0.012
K
0.030
0.050
P
0.020 REF
S
0.205
0.220
MILLIMETERS
MIN
MAX
4.06
4.57
3.30
3.81
1.90
2.41
1.96
2.11
0.051
0.152
0.15
0.30
0.76
1.27
0.51 REF
5.21
5.59
H
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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8
MURS205T3/D