MURS205T3, MURS210T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. http://onsemi.com • • • • Small Compact Surface Mountable Package with J–Bend Leads Rectangular Package for Automated Handling High Temperature Glass Passivated Junction Low Forward Voltage Drop (0.74 Volts Max @ 2.0 A, TJ = 150°C) ULTRAFAST RECTIFIERS 2 AMPERES 50–100 VOLTS Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped in 12 mm Tape and Reel, 2500 units per reel Polarity: Polarity Band Indicates Cathode Lead Marking: U2A, U2B MARKING DIAGRAM U2x SMB CASE 403A x = A (205T3) B (210T3) ORDERING INFORMATION Device Package Shipping MURS205T3 SMB 2500 Tape & Reel MURS210T3 SMB 2500 Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 September, 2000 – Rev. 0 1 Publication Order Number: MURS205T3/D MURS205T3, MURS210T3 MAXIMUM RATINGS MURS Symbol 205T3 210T3 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 Volts Average Rectified Forward Current IF(AV) 1.0 @ TL = 150°C 2.0 @ TL = 125°C Amps Non–Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 50 Amps TJ 65 to +175 °C RθJL 13 °C/W Rating Operating Junction Temperature THERMAL CHARACTERISTICS Thermal Resistance, Junction to Lead (TL = 25°C) ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (1) (iF = 2.0 A, TJ = 25°C) (iF = 2.0 A, TJ = 150°C) vF Maximum Instantaneous Reverse Current (1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 150°C) iR Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/µs) (iF = 0.5 A, iR = 1.0 A, IR to 0.25 A) trr Maximum Forward Recovery Time (iF = 1.0 A, di/dt = 100 A/µs, Rec. to 1.0 V) tfr Volts 0.94 0.74 µA 2.0 50 ns 30 20 (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%. http://onsemi.com 2 20 ns 10 10 7.0 7.0 5.0 5.0 3.0 3.0 175°C 2.0 100°C 1.0 0.7 0.5 25°C 0.3 0.2 0.1 0.07 100°C 1.0 0.7 0.5 TC = 25°C 0.3 0.2 0.1 0.07 0.05 0.05 0.03 0.03 0.02 0.02 0.01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 175°C 2.0 IF, INSTANTANEOUS FORWARD CURRENT (µA) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) MURS205T3, MURS210T3 0.01 0.3 1.1 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0.5 0.6 0.7 0.8 0.9 1 1.1 vF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 2. Maximum Forward Voltage Figure 1. Typical Forward Voltage 100 100 IR, REVERSE CURRENT (µA) IR, REVERSE CURRENT (µA) 0.4 TJ = 175°C 10 1 TJ = 100°C TJ = 25°C 0.1 0.01 0 20 40 60 80 TJ = 175°C 10 TJ = 100°C 1 TJ = 25°C 0.1 0.01 100 VR, REVERSE VOLTAGE (VOLTS) 0 20 40 60 80 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current* Figure 4. Maximum Reverse Current* * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if applied VR is sufficiently below rated VR. http://onsemi.com 3 100 MURS205T3, MURS210T3 50 50 NOTE: TYPICAL CAPACITANCE AT 0 V = 44 V 40 35 30 25 20 15 10 5 40 35 30 25 20 15 10 5 0 0 4 8 12 16 20 24 28 32 36 0 40 8 7 6 dc 4 3 2 SQUARE WAVE 90 16 20 24 28 32 VR, REVERSE VOLTAGE (VOLTS) 9 0 80 12 Figure 6. Maximum Capacitance RATED VOLTAGE APPLIED RJC = 13°C/W TJ = 175°C 1 8 Figure 5. Typical Capacitance 10 5 4 VR, REVERSE VOLTAGE (VOLTS) PF, AVERAGE POWER DISSIPATION (WATTS) 0 IF(AV), AVERAGE FORWARD CURRENT (AMPS) NOTE: MAXIMUM CAPACITANCE AT 0 V = 47 V 45 C, CAPACITANCE (pF) C, CAPACITANCE (pF) 45 100 110 120 130 140 150 160 170 180 36 4 3.5 TJ = 175°C 3 2.5 2 SQUARE WAVE 1.5 1 dc 0.5 0 0 TC, CASE TEMPERATURE (°C) 0.5 1 1.5 2 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 8. Power Dissipation Figure 7. Current Derating, Case http://onsemi.com 4 40 2.5 MURS205T3, MURS210T3 Notes http://onsemi.com 5 MURS205T3, MURS210T3 Notes http://onsemi.com 6 MURS205T3, MURS210T3 Notes http://onsemi.com 7 MURS205T3, MURS210T3 PACKAGE DIMENSIONS SMB CASE 403A–03 ISSUE D S A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. D B C K P J INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59 H ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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