EUDYNA FLL120MK

FLL120MK
L-Band Medium & High Power GaAs FET
FEATURES
•
•
•
•
•
High Output Power: P1dB = 40.0dBm (Typ.)
High Gain: G1dB = 10.0dB (Typ.)
High PAE: ηadd = 40% (Typ.)
Proven Reliability
Hermetically Sealed Package
DESCRIPTION
The FLL120MK is a Power GaAs FET that is specifically designed to
provide high power at L-Band frequencies with gain, linearity and
efficiency superior to that of silicon devices. The performance in
multitone environments for Class AB operation make them ideally
suited for base station applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Condition
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
37.5
W
Total Power Dissipation
Tc = 25°C
PT
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 26.8 and -5.8 mA respectively with
gate resistance of 50Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Symbol
IDSS
Min.
Limit
Typ. Max.
Unit
VDS = 5V, VGS = 0V
-
4000 6000
mA
-
2000
-
mS
-1.0
-2.0
-3.5
V
-5
-
-
V
39.5
40.0
-
dBm
9.0
10.0
-
dB
-
40
-
%
-
3.3
4.0
°C/W
Test Conditions
Transconductance
gm
VDS = 5V, IDS = 2400mA
Pinch-off Voltage
Vp
VDS = 5V, IDS =240mA
Gate Source Breakdown Voltage
VGSO
Output Power at 1dB G.C.P.
P1dB
Power Gain at 1dB G.C.P.
G1dB
Power-added Efficiency
ηadd
Thermal Resistance
Rth
IGS = -240µA
VDS = 10V
IDS = 0.55 IDSS (Typ.),
f = 2.3GHz
Channel to Case
CASE STYLE: MK
Edition 1.1
July 1999
G.C.P.: Gain Compression Point
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FLL120MK
L-Band Medium & High Power GaAs FET
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
Drain Current (mA)
40
30
20
4000
VGS =0V
3000
-0.5V
2000
-1.0V
1000
10
-1.5V
-2.0V
50
100
150
0
200
2
4
6
OUTPUT POWER vs. INPUT POWER
VDS=10V
IDS ≈ 0.55 IDSS
f = 2.3 GHz
42
Pout
40
38
36
60
ηadd
34
40
32
20
30
8
10
Drain-Source Voltage (V)
Case Temperature (°C)
20 22 24 26 28 30 32
Input Power (dBm)
2
0
ηadd (%)
0
Output Power (dBm)
Total Power Dissipation (W)
50
FLL120MK
L-Band Medium & High Power GaAs FET
S11
S22
+j50
S21
S12
+90°
+j100
+j25
0.5 GHz
4.5
5.0 GHz
4.0
+j250
5.0 GHz
1 4.5
4.0
1.5
4.5
4.0
3.0 2.0
5.0 GHz
1
0.5GHz
4.0
3.5
3.0
3.0
2.5
2.0 2.0
0.5GHz10
1.0
0
5.0 GHz
4.5
3.5
+j10
25
50Ω
100
180°
250
4
3
2
0°
SCALE FOR |S21|
-j10
SCALE FOR |S12|
0.5GHz
-j250
-j25
-j100
0.2
-90°
-j50
FREQUENCY
(MHZ)
0.1
S11
S-PARAMETERS
VDS = 10V, IDS = 2200mA
S21
S12
MAG
ANG
MAG
ANG
S22
MAG
ANG
MAG
ANG
500
.959
-168.4
3.136
95.8
.008
1000
.953
-176.0
1.617
94.1
.010
31.0
.824
179.4
45.7
.813
178.8
1500
.953
-179.6
1.170
93.8
.011
64.3
.810
177.7
2000
.951
177.0
.978
92.3
.014
82.4
.792
176.5
2500
.939
172.6
.927
91.4
.021
89.1
.778
174.0
3000
.914
165.1
.936
88.0
.024
93.2
.739
168.3
3500
.885
152.7
.990
80.6
.033
94.6
.695
158.9
4000
.836
134.0
1.106
67.1
.051
88.1
.633
145.1
4500
.766
107.3
1.239
48.2
.067
77.3
.559
128.0
5000
.690
71.6
1.415
23.9
.103
60.5
.477
107.3
Download S-Parameters, click here
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FLL120MK
L-Band Medium & High Power GaAs FET
2.5 Min.
(0.098)
Case Style "MK"
Metal-Ceramic Hermetic Package
0.1
(0.004)
4.8
(0.188)
2
1
6.3±0.2
(0.25)
2-R 1.25
(0.049)
3
2.28±0.2
(0.089)
2.5 Min.
(0.098)
1.0±0.1
(0.039)
17.5±0.2
(0.689)
4.5 Max.
(0.177)
1.78
(0.073)
8.9
(0.349)
14.3±0.2
(0.563)
1. Gate
2. Source (Flange)
3. Drain
Unit: mm(inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
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