FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm (Typ.) High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 37.5 W Total Power Dissipation Tc = 25°C PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 26.8 and -5.8 mA respectively with gate resistance of 50Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Min. Limit Typ. Max. Unit VDS = 5V, VGS = 0V - 4000 6000 mA - 2000 - mS -1.0 -2.0 -3.5 V -5 - - V 39.5 40.0 - dBm 9.0 10.0 - dB - 40 - % - 3.3 4.0 °C/W Test Conditions Transconductance gm VDS = 5V, IDS = 2400mA Pinch-off Voltage Vp VDS = 5V, IDS =240mA Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Power-added Efficiency ηadd Thermal Resistance Rth IGS = -240µA VDS = 10V IDS = 0.55 IDSS (Typ.), f = 2.3GHz Channel to Case CASE STYLE: MK Edition 1.1 July 1999 G.C.P.: Gain Compression Point 1 FLL120MK L-Band Medium & High Power GaAs FET POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Drain Current (mA) 40 30 20 4000 VGS =0V 3000 -0.5V 2000 -1.0V 1000 10 -1.5V -2.0V 50 100 150 0 200 2 4 6 OUTPUT POWER vs. INPUT POWER VDS=10V IDS ≈ 0.55 IDSS f = 2.3 GHz 42 Pout 40 38 36 60 ηadd 34 40 32 20 30 8 10 Drain-Source Voltage (V) Case Temperature (°C) 20 22 24 26 28 30 32 Input Power (dBm) 2 0 ηadd (%) 0 Output Power (dBm) Total Power Dissipation (W) 50 FLL120MK L-Band Medium & High Power GaAs FET S11 S22 +j50 S21 S12 +90° +j100 +j25 0.5 GHz 4.5 5.0 GHz 4.0 +j250 5.0 GHz 1 4.5 4.0 1.5 4.5 4.0 3.0 2.0 5.0 GHz 1 0.5GHz 4.0 3.5 3.0 3.0 2.5 2.0 2.0 0.5GHz10 1.0 0 5.0 GHz 4.5 3.5 +j10 25 50Ω 100 180° 250 4 3 2 0° SCALE FOR |S21| -j10 SCALE FOR |S12| 0.5GHz -j250 -j25 -j100 0.2 -90° -j50 FREQUENCY (MHZ) 0.1 S11 S-PARAMETERS VDS = 10V, IDS = 2200mA S21 S12 MAG ANG MAG ANG S22 MAG ANG MAG ANG 500 .959 -168.4 3.136 95.8 .008 1000 .953 -176.0 1.617 94.1 .010 31.0 .824 179.4 45.7 .813 178.8 1500 .953 -179.6 1.170 93.8 .011 64.3 .810 177.7 2000 .951 177.0 .978 92.3 .014 82.4 .792 176.5 2500 .939 172.6 .927 91.4 .021 89.1 .778 174.0 3000 .914 165.1 .936 88.0 .024 93.2 .739 168.3 3500 .885 152.7 .990 80.6 .033 94.6 .695 158.9 4000 .836 134.0 1.106 67.1 .051 88.1 .633 145.1 4500 .766 107.3 1.239 48.2 .067 77.3 .559 128.0 5000 .690 71.6 1.415 23.9 .103 60.5 .477 107.3 Download S-Parameters, click here 3 FLL120MK L-Band Medium & High Power GaAs FET 2.5 Min. (0.098) Case Style "MK" Metal-Ceramic Hermetic Package 0.1 (0.004) 4.8 (0.188) 2 1 6.3±0.2 (0.25) 2-R 1.25 (0.049) 3 2.28±0.2 (0.089) 2.5 Min. (0.098) 1.0±0.1 (0.039) 17.5±0.2 (0.689) 4.5 Max. (0.177) 1.78 (0.073) 8.9 (0.349) 14.3±0.2 (0.563) 1. Gate 2. Source (Flange) 3. Drain Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4