EUDYNA FLM1414-12F

FLM1414-12F
X, Ku-Band Internally Matched FET
FEATURES
•
•
•
•
•
•
High Output Power: P1dB = 40.5dBm (Typ.)
High Gain: G1dB = 5.0dB (Typ.)
High PAE: ηadd = 23% (Typ.)
Broad Band: 14.0 ~ 14.5GHz
Impedance Matched Zin/Zout = 50Ω
Hermetically Sealed
DESCRIPTION
The FLM1414-12F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in
a 50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Condition
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
57.6
W
Total Power Dissipation
Tc = 25°C
PT
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 34.0 and -5.0 mA respectively with
gate resistance of 50Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Symbol
IDSS
Test Conditions
Min.
Limit
Typ. Max.
Unit
VDS = 5V, VGS = 0V
-
6000
9000
mA
Transconductance
gm
VDS = 5V, IDS = 3600mA
-
5000
-
mS
Pinch-off Voltage
Vp
VDS = 5V, IDS = 300mA
-0.5
-1.5
-3.0
V
-5
-
-
V
39.5
40.5
-
dBm
4.0
5.0
-
dB
-
3600
4500
mA
-
23
-
%
Gate Source Breakdown Voltage
VGSO
Output Power at 1dB G.C.P.
P1dB
Power Gain at 1dB G.C.P.
G1dB
Drain Current
Idsr
IGS = -340µA
VDS =10V,
IDS = 0.6 IDSS (Typ.),
f = 14.0 ~ 14.5 GHz,
ZS = ZL= 50 ohm
Power-added Efficiency
ηadd
Thermal Resistance
Rth
Channel to Case
-
2.3
2.6
°C/W
∆Tch
10V x Idsr x Rth
-
-
80
°C
Channel Temperature Rise
CASE STYLE: IB
Edition 1.3
August 2004
G.C.P.: Gain Compression Point
1
FLM1414-12F
X, Ku-Band Internally Matched FET
Total Power Dissipation (W)
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
Drain Current (mA)
60
45
30
15
VGS = 0V
6000
-0.5V
4000
-1.0V
-1.5V
2000
-2.0V
50
100
150
2
4
8
6
10
Case Temperature (°C)
Drain-Source Voltage
OUTPUT POWER vs. FREQUENCY
OUTPUT POWER vs. INPUT POWER
VDS=10V
f = 14.25 GHz
VDS=10V
P1dB
40
Pin=37dBm
33dBm
38
36
29dBm
34
Pout
Output Power (dBm)
40
Output Power (dBm)
0
200
38
30
36
20
34
ηadd
32
32
10
25dBm
14.0
14.1
14.2
14.3 14.4
25
14.5
27
29
31
33
Input Power (dBm)
Frequency (GHz)
2
35
37
ηadd (%)
0
FLM1414-12F
X, Ku-Band Internally Matched FET
S11
S22
+j100
+j25
13.9 14.0
14.1
14.2
14.3
14.4
13.8 GHz
+j10
0
10
25
14.0
14.5
14.6
14.7
100
50Ω
14.4
14.2
14.5
0.1
+j250
14.7
14.7
14.6
250
180°
1
14.5
14.5
14.4
14.3
14.2
14.4
13.8 GHz
14.3
14.7
-j10
-j250
3
4
5
14.0
13.8 GHz
13.8 GHz
13.9
-j100
-90°
-j50
FREQUENCY
(MHZ)
2
SCALE FOR |S21|
14.2
14.1
14.0
-j25
S21
S12
+90°
0.2
SCALE FOR |S12|
+j50
S11
S-PARAMETERS
VDS = 10V, IDS = 3600mA
S21
S12
MAG
ANG
MAG
ANG
MAG
ANG
13800
.376
-154.2
1.886
-80.3
.106
13900
.315
-159.6
1.917
-93.5
.110
14000
.248
-164.1
1.944
-105.8
.113
14100
.178
-165.7
1.941
-118.3
.115
14200
.104
-158.7
1.942
-131.7
14300
.051
-115.7
1.928
-143.3
14400
.091
-58.4
1.896
14500
.167
-46.4
1.894
14600
.247
-48.1
14700
.328
-52.7
S22
MAG
ANG
-87.7
.653
124.8
-101.2
.620
110.8
-114.7
.585
96.6
-128.1
.541
82.5
.114
-141.4
.506
68.3
.114
-153.8
.472
57.2
-156.3
.113
-165.0
.437
47.1
-167.5
.113
-176.2
.411
38.1
1.893
179.5
.115
172.8
.381
28.6
1.886
166.4
.116
160.3
.338
18.6
3
0°
FLM1414-12F
X, Ku-Band Internally Matched FET
2.0 Min.
(0.079)
Case Style "IB"
Metal-Ceramic Hermetic Package
1
0.1
(0.004)
2
12.9±0.2
(0.508)
2-R 1.6±0.15
(0.063)
3
2.6±0.15
(0.102)
2.0 Min.
(0.079)
0.6
(0.024)
5.2 Max.
(0.205)
1.45
(0.059)
0.2 Max.
(0.008)
10.7
(0.421)
1. Gate
2. Source (Flange)
3. Drain
12.0
(0.422)
Unit: mm(inches)
17.0±0.15
(0.669)
21.0±0.15
(0.827)
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
CAUTION
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
www.us.eudyna.com
• Do not put this product into the mouth.
Eudyna Devices Europe Ltd.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
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