FLL400IP-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W (Typ.) High PAE: 43% (Typ.) Broad Frequency Range: 2300 to 2500 MHz. Suitable for class A operation at 10V and class AB operation at 12V DESCRIPTION The FLL400IP-3 is a 35 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power S-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is uniquely suited for use in Wireless Local Loop (WLL) base station amplifiers as it offers high gain, long term reliability and ease of use. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Parameter Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 107 W Total Power Dissipation Tc = 25°C PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch +175 °C Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 54.4 and -17.4 mA respectively with gate resistance of 25Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Symbol Conditions Min. Limits Typ. Max. Unit Drain Current IDSS VDS = 5V, VGS = 0V - 12 16 A Transconductance gm VDS = 5V, IDS = 7.2A - 6000 - mS Pinch-Off Voltage Vp VDS = 5V, IDS = 720mA -1.0 -2.0 -3.5 V -5 - - V 44.5 45.5 - dBm 8.0 9.0 - dB - 6.0 8.0 A - 43 - % VDS = 10V f = 2.5 GHz IDS = 5A (Note 1) - 44.5 - dBm - 9.0 - dB Channel to Case - 1.0 1.4 °C/W Gate-Source Breakdown Voltage VGSO Output Power at 1 dB G.C.P. P1dB Power Gain at 1 dB G.C.P. G1dB Drain Current IDSR Power-Added Efficiency ηadd Output Power at 1 dB G.C.P. P1dB Power Gain at 1 dB G.C.P. G1dB Thermal Resistance Rth IGS = -720µA VDS = 12V f = 2.5 GHz IDS = 2A CASE STYLE: IP G.C.P.: Gain Compression Point Note 1: The device shall be measured at a constant VGS condition. Edition 1.5 October 2004 1 FLL400IP-3 L-Band Medium & High Power GaAs FET OUTPUT POWER & ηadd vs. INPUT POWER VDS = 12V IDS = 2A f = 2.5GHz 47 46 45 44 43 42 41 40 39 38 37 36 35 Pout 44 50 43 42 41 40 ηadd 40 30 39 38 37 20 36 35 10 ηadd (%) Output Power (dBm) 45 Output Power (dBm) 46 OUTPUT POWER vs. FREQUENCY VDS = 12V IDS = 2A Pin=36dBm 34dBm 32dBm 30dBm 28dBm 25dBm 34 2.4 2.5 2.6 0 24 26 28 30 32 34 36 38 Frequency (GHz) Input Power (dBm) IMD vs.OUTPUT POWER -20 IMD vs. OUTPUT POWER -20 VDS = 10V IDS = 5A f = 2.5GHz ∆f = +5MHz IM3 -30 VDS = 12V IDS = 2A f = 2.5GHz ∆f = +5.0MHz IM3 -30 IMD (dBc) -40 IM5 -50 -40 -50 -60 29 31 33 35 37 39 41 -60 43 29 31 Total Output Power (dBm) 33 35 37 39 Total Output Power (dBm) POWER DERATING CURVE 120 Total Power Dissipation (W) IMD (dBc) IM5 100 80 60 40 20 0 50 100 150 Case Temperature (°C) 2 200 41 43 FLL400IP-3 L-Band Medium & High Power GaAs FET S-PARAMETERS VDS = 12V, IDS = 2000mA FREQUENCY (MHZ) 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 3100 3200 3300 3400 3500 3600 3700 3800 3900 4000 4100 4200 4300 4400 4500 4600 4700 4800 4900 5000 S11 S21 S12 MAG ANG MAG ANG .954 .954 .953 .849 .849 .840 .925 .929 .926 .919 .910 .902 .886 .874 .861 .845 .824 .806 .783 .760 .738 .717 .711 .736 .794 .856 .807 .936 .848 .941 .959 .957 .954 .948 .947 .945 .942 .939 .943 .945 .944 .942 .946 .947 .949 .946 178.5 177.2 175.3 173.7 171.8 170.3 168.3 168.0 166.5 164.9 163.2 161.3 159.4 157.7 156.0 154.2 152.7 150.9 149.9 149.6 151.6 153.4 156.4 159.7 161.9 161.1 159.0 156.3 153.5 153.9 150.6 148.7 146.9 145.3 143.5 142.0 140.2 137.8 135.9 133.4 131.3 128.5 126.2 123.8 121.2 119.1 1.792 1.527 1.341 1.202 1.107 1.033 .964 .952 .928 .909 .906 .912 .919 .934 .962 .988 1.027 1.068 1.119 1.173 1.224 1.277 1.311 1.291 1.186 1.015 .821 .643 .498 .379 .315 .252 .204 .169 .144 .121 .101 .087 .074 .067 .061 .056 .052 .047 .044 .044 66.1 61.1 55.9 50.2 44.1 38.5 32.9 27.0 20.5 13.8 7.0 -0.5 -8.6 -16.7 -25.7 -35.5 -45.5 -56.6 -68.9 -82.0 -94.2 -111.2 -130.3 -152.2 -174.9 162.5 142.6 125.3 110.4 102.4 89.3 80.4 71.1 64.6 57.4 50.0 43.8 38.5 34.4 31.2 25.4 21.7 16.4 13.7 10.3 5.8 MAG .006 .006 .007 .007 .007 .009 .010 .009 .010 .011 .012 .014 .014 .015 .016 .017 .017 .018 .019 .018 .018 .017 .016 .013 .008 .005 .005 .005 .006 .002 .007 .007 .007 .007 .007 .008 .007 .009 .007 .008 .008 .010 .010 .012 .014 .016 S22 ANG 28.3 27.5 30.8 33.6 31.7 31.1 -8.6 26.2 23.3 21.4 20.7 15.2 9.4 5.2 -1.1 -8.0 -13.8 -21.6 -33.6 -45.7 -54.9 -72.9 -90.1 -115.4 -149.5 168.4 121.0 66.5 32.8 60.1 22.9 9.4 14.0 5.3 8.1 3.4 5.0 2.1 -0.9 7.6 14.5 14.3 16.1 19.0 15.0 15.6 MAG ANG .972 .867 .867 .857 .854 .850 .821 .835 .829 .821 .815 .809 .804 .802 .803 .809 .824 .837 .855 .881 .808 .936 .950 .939 .909 .875 .854 .849 .955 .805 .876 .884 .888 .889 .889 .897 .885 .882 .878 .881 .903 .915 .923 .931 .943 .956 174.9 174.5 174.0 173.1 172.6 171.7 172.8 171.4 170.9 170.3 170.2 169.8 169.4 169.0 169.6 168.2 167.5 166.5 165.0 163.3 161.8 158.6 154.8 150.8 148.1 147.1 147.6 148.4 148.5 149.2 150.7 150.1 149.9 149.9 150.0 149.5 149.1 149.5 147.6 147.2 145.8 142.7 139.4 135.8 131.9 127.9 Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used to determine the calculated Push-Pull S-Parameter amplifier designs. 3 FLL400IP-3 L-Band Medium & High Power GaAs FET Case Style "IP" Metal-Ceramic Hermetic Package 2-1 (0.039) 5 2-R1.3±0.2 (0.051) 5 (0.197) 4 2-1.4 (0.055) 1.9 (0.075) 13.8±0.2 (0.543) 13.3 (0.523) For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 9.8±0.2 (0.386) 3 6 2.6±0.2 (0.102) 2 2.4 (0.094) 3.0±0.5 MIN. (0.118) 1 5.5MAX (0.217) 45° 0.1+0.05 -0.01 (0.039) 8.2 (0.332) 3.0±0.5 MIN. (0.118) 22±0.2 (0.866) 18.6±0.2 (0.732) 1, 2: Gate 3, 6: Source 4, 5: Drain Unit: mm (inches) CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.us.eudyna.com • Do not put this product into the mouth. Eudyna Devices Europe Ltd. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. 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