DMP4015SK3 Green P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V(BR)DSS RDS(on) max -40V 11m @ VGS = -10V 15m @ VGS = -4.5V ID TC = +25°C -35A -30A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 100% Unclamped Inductive Switch (UIS) test in production Low on-resistance Fast switching speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications Case: TO252 (DPAK) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 DC-DC Converters Power management functions Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.33 grams (approximate) D TO252 D G S Top View Pin-Out Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMP4015SK3-13 DMP4015SK3Q-13 Notes: Compliance Standard Automotive Case TO252 TO252 Packaging 2,500/Tape & Reel 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html Marking Information Logo P4015S YYWW DMP4015SK3 Document number: DS35480 Rev. 6 - 2 Part no. . Xth week: 01 ~ 53 Year: “11” = 2011 1 of 7 www.diodes.com February 2013 © Diodes Incorporated DMP4015SK3 Maximum Ratings (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -10V Continuous Drain Current (Note 5) VGS = -10V TC = +25°C TC = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State Steady State t<10s ID Value -40 ±25 -35 -27 ID -14 -11 A A -22 -18 -100 -5.5 -57 162 ID Pulsed Drain Current (10s pulse, duty cycle = 1%) Maximum Body Diode Forward Current (Note 5) Avalanche Current (Note 6) Avalanche Energy (Note 6) Units V V IDM IS IAS EAS A A A A mJ Thermal Characteristics (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C TA = +70°C Steady state t<10s Steady state Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range PD RθJA RθJC TJ, TSTG Value 3.5 2.2 36 15 4.5 -55 to +150 Units W °C/W °C Electrical Characteristics (@ TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -40 -1 100 V µA nA VGS = 0V, ID = -250µA VDS = -40V, VGS = 0V VGS = 25V, VDS = 0V VGS(th) RDS(ON) |Yfs| VSD -2.0 7 9 26 -0.7 -2.5 11 15 -1.0 V Static Drain-Source On-Resistance -1.5 VDS = VGS, ID = -250µA VGS = -10V, ID = -9.8A VGS = -4.5V, ID = -9.8A VDS = -20V, ID = -9.8A VGS = 0V, IS = -1A Ciss Coss Crss RG Qg Qgs Qgd tD(on) tr tD(off) tf 4234 1036 526 7.77 47.5 14.2 13.5 13.2 10.0 302.7 137.9 Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: m S V Test Condition pF VDS = -20V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -20V, VGS = -5V ID = -9.8A ns VGS = -10V, VDD = -20V, RG = 6, ID = -1A 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. UIS in production with L = 0.1mH, TJ = +25°C. 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP4015SK3 Document number: DS35480 Rev. 6 - 2 2 of 7 www.diodes.com February 2013 © Diodes Incorporated DMP4015SK3 30.0 30 -VGS = 4.0V 25 -VGS = 3.5V 20.0 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 25.0 -VGS = 4.5V 15.0 -VGS = 10V 10.0 5.0 0.0 0.5 1 1.5 -VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE() RDS(ON),DRAIN-SOURCE ON-RESISTANCE() 0.015 0.01 0.005 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature Document number: DS35480 Rev. 6 - 2 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 0.02 5 T A = 150 C -VGS= 4.5V TA = 125C 0.015 TA = 85C 0.01 TA = 25C TA = -55 C 0.005 0 0 5 10 15 20 25 30 -ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.6 DMP4015SK3 10 0 0 2 0.02 0 15 5 -V GS = 3.0V 0 20 3 of 7 www.diodes.com 0.020 -VGS = 4.5V -ID = 5.0A 0.016 0.012 0.008 -VGS = 10V -ID = 10A 0.004 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature February 2013 © Diodes Incorporated 2.4 30 2 25 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) DMP4015SK3 1.6 1.2 0.8 0.4 0 -50 20 15 10 5 0 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0.2 0.4 0.6 0.8 1 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 10000 1000 T A =150°C CISS -IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) f = 1MHz COSS 100 CRSS 1000 5 10 15 20 25 100 10 TA =25°C 1 5 10 15 20 25 30 -VDS, DRAIN-SOURCE VOLTAGE(V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 10 0 100 P(pk), PEAK TRANSIENT POWER (W) VGS, GATE-SOURCE VOLTAGE (V) TA =125°C TA =85°C 0.1 10 0 1.4 8 6 4 2 Single Pulse RJA = 72°C/W RJA(t) = r(t) * RJA T J - T A = P * RJA 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMP4015SK3 Document number: DS35480 Rev. 6 - 2 120 4 of 7 www.diodes.com 0 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 12 Single Pulse Maximum Power Dissipation February 2013 © Diodes Incorporated DMP4015SK3 90 600 400 60 50 300 40 IAS 30 20 100 -ID, DRAIN CURRENT (A) 70 EAS 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 INDUCTOR (mH) Fig. 13 Single-Pulse Avalanche Tested PW = 10µs 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.1 TJ(max) = 150°C PW = 100µs TA = 25°C VGS = -10V Single Pulse DUT on 1 * MRP Board 10 0 0.1 0.2 RDS(on) Limited 80 500 200 100 IAS, AVALANCHE CURRENT (A) EAS, AVALANCHE ENERGY (mJ) Starting Temperature (TJ ) = 25°C 0.01 0.1 0 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 14 SOA, Safe Operation Area 100 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 D = 0.9 0.1 D = 0.1 D = 0.50 D = 0.02 0.01 D = 0.01 RJA(t) = r(t) * RJA RJA = 72°C/W Duty Cycle, D = t1/ t2 D = 0.005 D = Single Pulse 0.001 0.001 DMP4015SK3 Document number: DS35480 Rev. 6 - 2 0.01 0.1 1 10 100 t1, PULSE DURATION TIMES (sec) Fig. 15 Transient Thermal Resistance 5 of 7 www.diodes.com 1,000 10,000 February 2013 © Diodes Incorporated DMP4015SK3 Package Outline Dimensions E TO252 Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° All Dimensions in mm A b3 c2 L3 A2 D E1 H L4 A1 L e 2X b2 3X b a Suggested Pad Layout X2 Y2 C Y1 X1 DMP4015SK3 Document number: DS35480 Rev. 6 - 2 E1 Z Dimensions Z X1 X2 Y1 Y2 C E1 6 of 7 www.diodes.com Value (in mm) 11.6 1.5 7.0 2.5 7.0 6.9 2.3 February 2013 © Diodes Incorporated DMP4015SK3 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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