DMG3407SSN P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) ID TA = 25°C 50mΩ @ VGS = -10V -4.0A 72mΩ @ VGS = -4.5V -3.3A V(BR)DSS • • • • • • • -30V Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead-Free Finish; RoHS compliant (Note 1) Halogen and Antimony Free. “Green” Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • • • • • • Load Switch DC-DC Converters Power management functions Case: SC59 Case Material – Molded Plastic. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.014 grams (approximate) Drain SC59 D Gate Source Top View S G Pin Configuration Internal Schematic Ordering Information (Note 3) Part Number DMG3407SSN-7 Notes: Case SC59 Packaging 3000 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information G32 Date Code Key Year Code Month Code 2010 X Jan 1 2011 Y Feb 2 DMG3407SSN Document number: DS35135 Rev. 5 - 2 Mar 3 YM ADVANCE INFORMATION Features and Benefits G32 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) 2012 Z Apr 4 May 5 2013 A Jun 6 2014 B Jul 7 1 of 6 www.diodes.com Aug 8 2015 C Sep 9 Oct O 2016 D Nov N Dec D April 2012 © Diodes Incorporated DMG3407SSN Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS ADVANCE INFORMATION Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -10V TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C Steady State t<10s Continuous Drain Current (Note 5) VGS = -4.5V Steady State t<10s ID Value -30 ±20 -4.0 -3.2 ID -4.6 -3.6 A ID -3.3 -2.6 A A -3.9 -3.1 -30 -2.0 ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Body Diode Forward Current (Note 5) Units V V IDM IS A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol TA = 25°C TA = 70°C Steady state t<10s TA = 25°C TA = 70°C Steady state t<10s Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Value 1.1 0.7 166 118 1.8 1.1 98 71 18 -55 to +150 PD RθJA PD RθJA RθJC TJ, TSTG Units W °C/W W °C/W °C Electrical Characteristics @ TA = 25°C unless otherwise stated Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 - - -1 ±100 V μA nA VGS = 0V, ID = -250μA VDS = -30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD -1.5 39 56 8.2 -0.75 -2.1 50 72 -1.1 V Static Drain-Source On-Resistance -1.0 - VDS = VGS, ID = -250μA VGS = -10V, ID = -4.1A VGS = -4.5V, ID = -3.0A VDS = -5V, ID = -4A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr 466 80 47 2 10.6 5.2 1.3 1.1 6.8 5.5 582 114 76 5 13.3 6.5 1.7 1.9 6.0 12.9 35.4 30.7 8.5 7.0 700 148 105 8 16 8.5 2 2.7 10.2 8.5 Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ S V pF Ω nC Test Condition VDS = -15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -10V, VDS = -15V, ID = -4A VGS = -4.5V, VDS = -15V,ID = -4A ns VGS = -10V, VDS = -15V, RL = 3.6Ω, RG = 3Ω ns nC IF = 4A, di/dt = 100A/μs 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. The power dissipation PD is based on t<10s RθJA 5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided. The power dissipation PD is based on t<10s RθJA 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. DMG3407SSN Document number: DS35135 Rev. 5 - 2 2 of 6 www.diodes.com April 2012 © Diodes Incorporated DMG3407SSN 20 10 VGS = -4.5V VGS = -4.0V VDS = -5.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 8 VGS = -3.5V 12 8 VGS = -3.0V 6 4 TA = 150 °C 2 4 TA = 125°C VGS = -2.5V VGS = -2.0V 0 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics 0 0.10 0.08 0.06 0.04 0.02 0 0 2 4 6 8 -ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMG3407SSN Document number: DS35135 Rev. 5 - 2 VGS= -4.5V TA = 150°C TA = 125°C T A = 85°C TA = 25°C TA = -55°C 0 10 1.7 TA = 25°C -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω) 0.12 T A = 85°C TA = -55°C 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON),DRAIN-SOURCE ON-RESISTANCE(Ω) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) ADVANCE INFORMATION 16 2 4 6 8 -ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 10 0.12 0.10 VGS = -4.5V ID = -5A 0.08 0.06 VGS = -10V ID = -10A 0.04 0.02 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 3 of 6 www.diodes.com April 2012 © Diodes Incorporated 10 2.0 8 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE(V) 2.5 1.5 1.0 0.5 0 -50 -25 4 2 0.4 0.6 0.8 1.0 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 10,000 1,000 Ciss -IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) 6 0 0.2 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature Coss 100 Crss 1,000 T A = 150°C TA = 125°C 100 T A = 85°C 10 1 f = 1MHz TA = 25°C 10 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 0.1 6 10 14 18 22 26 30 -VDS, DRAIN-SOURCE VOLTAGE(V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage 30 P(pk), PEAK TRANSIENT POWER (W) 8 6 4 2 0 2 400 10 -VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION DMG3407SSN 0 4 8 12 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMG3407SSN Document number: DS35135 Rev. 5 - 2 16 350 Single Pulse RθJA = 164°C/W RθJA(t) = RθJA * r(t) TJ -TA = P * RθJA(t) 300 250 200 150 100 50 0 0.00001 0.001 0.1 10 1,000 t1, Pulse Duration Time (sec) Fig. 12 Single Pulse Maximum Power Dissipation 4 of 6 www.diodes.com April 2012 © Diodes Incorporated DMG3407SSN r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 1 D = 0.7 D = 0.5 D = 0.3 D = 0.9 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 164°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 13 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions A SC59 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D 0.95 G 1.90 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 N 0.70 0.80 0.75 0° 8° α All Dimensions in mm B C G H K M N J L D Suggested Pad Layout Y Z C X DMG3407SSN Document number: DS35135 Rev. 5 - 2 Dimensions Value (in mm) Z 3.4 X 0.8 Y 1.0 C 2.4 E 1.35 E 5 of 6 www.diodes.com April 2012 © Diodes Incorporated DMG3407SSN IMPORTANT NOTICE ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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