DMN4040SK3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits RDS(ON) ID TA = 25°C 30mΩ @ VGS = 10V 13.8A 54mΩ @ VGS = 4.5V 10.3A • • • • • • • 40V Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • Case: TO252-3L Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.33 grams (approximate) • • • Backlighting DC-DC Converters Power management functions D D TO252-3L G D G Top View S S Equivalent Circuit Top View Pin-Out Ordering Information (Note 3) Part Number DMN4040SK3-13 Notes: Case TO252-3L Packaging 2500 / Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information Logo N4040S YYWW DMN4040SK3 Document number: DS32043 Rev. 2 - 2 Part no. Xth week: 01 ~ 53 Year: “09” = 2009 1 of 6 www.diodes.com October 2010 © Diodes Incorporated DMN4040SK3 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) VGS = 10V Steady State Continuous Drain Current (Note 5) VGS = 10V Steady State Continuous Drain Current (Note 5) VGS = 10V t ≤ 10s Continuous Drain Current (Note 5) VGS = 4.5V Steady State Continuous Drain Current (Note 5) VGS = 4.5V t ≤ 10s TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C ID Value 40 ±20 6.0 4.8 ID 9.3 7.4 A ID 13.8 11.0 A ID 6.9 5.5 A IDM 10.3 8.2 50 Symbol PD RθJA PD RθJA PD RθJA TJ, TSTG Max 1.71 72.9 4.1 30.8 8.9 14 -55 to +150 ID Pulsed Drain Current (Note 6) Unit V V A A A Thermal Characteristics Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) Power Dissipation (Note 5) t ≤ 10s Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) t ≤ 10s Operating and Storage Temperature Range Unit W °C/W W °C/W W °C/W °C Electrical Characteristics @ TA = 25°C unless otherwise stated Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 40 - - 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 40V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD 2.3 20 43 11 0.76 3.0 30 54 1.0 V Static Drain-Source On-Resistance 1.8 - VDS = VGS, ID = 250μA VGS = 10V, ID = 12A VGS = 4.5V, ID = 6A VDS = 5V, ID = 12A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 945 69 58 1.45 8.4 18.6 3.3 2.2 6.4 9.7 19.8 3.1 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge VGS = 4.5V Total Gate Charge VGS = 10V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V pF Test Condition VDS = 20V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 20V, ID = 12A nC VGS = 10V, VDS = 20V, ID = 12A ns ns ns ns VGS = 10V, VDS = 20V, RL = 1.6Ω, RG = 3Ω 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN4040SK3 Document number: DS32043 Rev. 2 - 2 2 of 6 www.diodes.com October 2010 © Diodes Incorporated 30 30 25 25 20 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) DMN4040SK3 VGS = 10V VGS = 4.5V VGS = 4.0V 15 VGS = 3.5V 10 VDS = 5V 20 15 10 TA = 150°C T A = 125°C 5 5 T A = 85°C VGS = 2.5V VGS = 3.0V 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 0.05 0.04 VGS = 4.5V 0.03 VGS = 10V 0.02 0.01 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 2 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 30 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 4 0.08 VGS = 4.5V 0.07 0.06 T A = 150°C 0.05 TA = 125°C TA = 85°C 0.04 TA = 25°C 0.03 TA = -55°C 0.02 0.01 0 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.08 1.4 1.2 VGS = 4.5V ID = 10A 1.0 VGS = 10V ID = 20A 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMN4040SK3 Document number: DS32043 Rev. 2 - 2 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.6 T A = 25°C TA = -55°C 0.07 0.06 0.05 VGS = 4.5V ID = 10A 0.04 0.03 VGS = 10V ID = 20A 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 3 of 6 www.diodes.com October 2010 © Diodes Incorporated DMN4040SK3 20 2.5 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 3.0 2.0 ID = 1mA 1.5 ID = 250µA 1.0 0.5 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 10,000 12 TA = 25°C 8 4 0 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 10,000 1,000 IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) f = 1MHz Ciss Coss 100 Crss 1,000 TA = 150°C T A = 125°C 100 TA = 85°C 10 TA = 25°C 1 10 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 40 0 10 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 30 VGS, GATE-SOURCE VOLTAGE (V) 10 VDS = 20V ID = 12A 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMN4040SK3 Document number: DS32043 Rev. 2 - 2 4 of 6 www.diodes.com October 2010 © Diodes Incorporated DMN4040SK3 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 74°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 10 100 1,000 Package Outline Dimensions E TO252-3L Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 − − e 2.286 − − E 6.45 6.70 6.58 E1 4.32 − − H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° − All Dimensions in mm A b3 c2 L3 E1 A2 D H L4 A1 L e 2X b2 3X b a Suggested Pad Layout X2 Y2 C Y1 X1 DMN4040SK3 Document number: DS32043 Rev. 2 - 2 Z Dimensions Z X1 X2 Y1 Y2 C E1 Value (in mm) 11.6 1.5 7.0 2.5 7.0 6.9 2.3 E1 5 of 6 www.diodes.com October 2010 © Diodes Incorporated DMN4040SK3 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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