DMN2065UW 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID max TA = 25°C 56mΩ @ VGS = 4.5V 2.8A 65mΩ @ VGS = 2.5V 2.6A 93mΩ @ VGS = 1.8V 2.2A 140mΩ @ VGS = 1.5V 1.8A • • • • • • This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 standards for High Reliability Mechanical Data Description and Applications General Purpose Interfacing Switch Power Management Functions DC-DC Converters Analog Switch • • • • • • Case: SOT323 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish ⎯ Matte Tin annealed over Alloy42 leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.027 grams (approximate) Drain SOT323 D Gate G S Source Equivalent Circuit Top View Top View Ordering Information (Note 3) Part Number DMN2065UW-7 Notes: Case SOT323 Packaging 3000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information DMH Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMN2065UW Document number: DS35554 Rev. 1 – 2 Mar 3 YM NEW PRODUCT V(BR)DSS 20V Features and Benefits DMH = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) 2013 A Apr 4 May 5 2014 B Jun 6 1 of 6 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D October 2011 © Diodes Incorporated DMN2065UW Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C Steady State Continuous Drain Current (Note 5) VGS = 4.5V t<10s Steady State Continuous Drain Current (Note 5) VGS = 1.8V t<10s ID Value 20 ±12 2.8 2.3 ID 3.1 2.6 A ID 2.2 1.7 A A 2.4 1.9 30 1.2 ID Pulsed Drain Current (10us pulse, duty cycle=1%) Maximum Body Diode Forward Current (Note 4) Units V V IDM IS A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol PD Total Power Dissipation (Note 4) Steady state t<10s Thermal Resistance, Junction to Ambient (Note 4) Value 0.43 296 252 0.7 178 151 -55 to +150 RθJA Total Power Dissipation (Note 5) PD Steady state t<10s Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range RθJA TJ, TSTG Units W °C/W °C/W W °C/W °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: @Tc = 25°C Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - 1 ±1 V μA μA VGS = 0V, ID = 1mA VDS = 20V, VGS = 0V VGS = ±10V, VDS = 0V VGS(th) 52 59 60 75 7 0.7 1.0 56 65 93 140 1.0 V |Yfs| VSD 0.35 - VDS = VGS, ID = 250μA VGS = 4.5V, ID = 2A VGS = 2.5V, ID = 2A VGS = 1.8V, ID = 1A VGS = 1.5V, ID = 0.5A VDS = 5V, ID = 3.8A VGS = 0V, IS = 1A Ciss Coss Crss Qg Qgs Qgd tD(on) tr tD(off) tf - 400.0 73.8 65.6 5.4 0.7 1.4 3.5 9.7 23.8 7.2 - RDS (ON) mΩ S V pF pF pF nC nC nC ns ns ns ns Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 6A VDD = 10V, VGS = 5V, RL = 1.7Ω, RG = 6Ω, 4. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout. 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMN2065UW Document number: DS35554 Rev. 1 – 2 2 of 6 www.diodes.com October 2011 © Diodes Incorporated DMN2065UW 10 5 VGS = 8.0V VGS = 4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 4 VGS = 2.5V VGS = 2.0V 6 VGS = 1.5V 4 2 3 2 T A = 150°C T A = 125°C 1 TA = 85° C T A = 25°C VGS = 1.2V 0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics TA = -55° C 0 3.0 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 1 2 3 4 5 6 7 ID, DRAIN SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.6 1.4 1.2 1.0 0.8 0.6 -50 Document number: DS35554 Rev. 1 – 2 2.0 VGS= 4.5V 0.06 TA = 150°C 0.05 TA = 125°C 0.04 T A = 85°C 0.03 TA = 25°C TA = -55°C 0.02 0.01 0 0 1 2 3 4 ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 5 0.08 0.07 0.06 VGS = 2.5V ID = 5A 0.05 0.04 VGS = 4.5V ID = 10A 0.03 0.02 0.01 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMN2065UW 0.5 1.0 1.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 0.07 8 1.8 0 0.08 RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω) RDS(ON),DRAIN-SOURCE ON-RESISTANCE(Ω) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) NEW PRODUCT VDS = 5.0V VGS = 3.0V 8 3 of 6 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature October 2011 © Diodes Incorporated DMN2065UW VGS(TH), GATE THRESHOLD VOLTAGE(V) 5 1.2 IS, SOURCE CURRENT (A) 4 1.0 0.8 0.6 0.4 3 2 1 0.2 0 -50 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 100 1,000 IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) T A = 150°C Ciss 100 Coss Crss 10 TA = 125°C 1 TA = 85°C 0.1 0.01 TA = 25°C f = 1MHz 10 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 20 0.001 TA = -55°C 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE(V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage 10 0 2 4 100 9 f = 1MHz R DS(on) Limited 8 10 ID, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT 1.4 7 6 5 4 3 1 PW = 1s 0.1 2 PW = 100ms PW = 10ms PW = 1ms PW = 100µs PW = 10µs 1 0 DC PW = 10s 0 3 6 9 12 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMN2065UW Document number: DS35554 Rev. 1 – 2 15 0.01 0.1 4 of 6 www.diodes.com 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area 100 October 2011 © Diodes Incorporated DMN2065UW NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 D = 0.9 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA (t) = r(t) * RθJA RθJA = 300°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 13 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions A B C G H K M J D L SOT323 Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.18 0.11 0° 8° α All Dimensions in mm Suggested Pad Layout Y Z C X DMN2065UW Document number: DS35554 Rev. 1 – 2 Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C 1.9 E 1.0 E 5 of 6 www.diodes.com October 2011 © Diodes Incorporated DMN2065UW NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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