SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT649 TYPICAL CHARACTERISTICS 200 0.8 - Gain IC /IB =10 0.4 COMPLEMENTARY TYPE PARTMARKING DETAIL V E C FZT749 FZT649 ABSOLUTE MAXIMUM RATINGS. 0.2 0 0.01 0.1 1 20 0.001 10 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 10 1.4 2.0 - (Volts) - (Volts) 1.2 IC/IB=10 1.0 VC E=2V 0.8 0.6 0.4 0.01 0.1 1 10 0.0001 0.01 0.001 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 10 Single Pulse Test at Tamb=25°C 10 td tr IB1=IB2=IC/10 tf ns Switching time 140 1 DC 1s 100ms 10ms 1ms 100µs 0.1 td 120 ts ns 100 80 1000 tr 800 tf 600 60 ts 40 200 0 0.1 1 10 0 0.1 100 VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) Safe Operating Area Switching Speeds 3 - 206 SYMBOL VALUE UNIT V Collector-Base Voltage VCBO 35 Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 8 A Continuous Collector Current IC 3 A Power Dissipation at Tamb=25°C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL MIN. 35 V(BR)CBO MAX. UNIT V CONDITIONS. IC=100µA 25 V IC=10mA* V(BR)EBO 5 V IE=100µA µA µA µA VBE(sat) 0.12 0.40 0.9 0.1 10 0.1 0.3 0.6 1.25 V V V VCB=30V VCB=30V,Tamb=100°C VEB=4V IC=1A, IB=100mA* IC=3A, IB=300mA* IC=1A, IB=100mA* VBE(on) 0.8 1.0 V IC=1A, VCE=2V* MHz IC=50mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* IC=100mA, VCE=5V f=100MHz VCB=10V, f=1MHz IC=500mA, VCC=10V IB1=IB2=50mA ICBO Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio IEBO VCE(sat) Transition Frequency fT Output Capacitance Switching Times Cobo ton toff 1 TYP. V(BR)CEO hFE 400 20 0.01 PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). V V 1.0 0.01 C B 100 h - (Volts) V C E=2V 0.6 FZT649 ISSUE 4 FEBRUARY 1996 FEATURES * 25 Volt VCEO * 3 Amp continuous current * Low saturation voltage * Excellent hFE specified up to 6A 70 100 75 15 150 200 200 150 50 240 25 55 300 300 50 pF ns ns *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 205 SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT649 TYPICAL CHARACTERISTICS 200 0.8 - Gain IC /IB =10 0.4 COMPLEMENTARY TYPE PARTMARKING DETAIL V E C FZT749 FZT649 ABSOLUTE MAXIMUM RATINGS. 0.2 0 0.01 0.1 1 20 0.001 10 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 10 1.4 2.0 - (Volts) - (Volts) 1.2 IC/IB=10 1.0 VC E=2V 0.8 0.6 0.4 0.01 0.1 1 10 0.0001 0.01 0.001 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 10 Single Pulse Test at Tamb=25°C 10 td tr IB1=IB2=IC/10 tf ns Switching time 140 1 DC 1s 100ms 10ms 1ms 100µs 0.1 td 120 ts ns 100 80 1000 tr 800 tf 600 60 ts 40 200 0 0.1 1 10 0 0.1 100 VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) Safe Operating Area Switching Speeds 3 - 206 SYMBOL VALUE UNIT V Collector-Base Voltage VCBO 35 Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 8 A Continuous Collector Current IC 3 A Power Dissipation at Tamb=25°C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL MIN. 35 V(BR)CBO MAX. UNIT V CONDITIONS. IC=100µA 25 V IC=10mA* V(BR)EBO 5 V IE=100µA µA µA µA VBE(sat) 0.12 0.40 0.9 0.1 10 0.1 0.3 0.6 1.25 V V V VCB=30V VCB=30V,Tamb=100°C VEB=4V IC=1A, IB=100mA* IC=3A, IB=300mA* IC=1A, IB=100mA* VBE(on) 0.8 1.0 V IC=1A, VCE=2V* MHz IC=50mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* IC=100mA, VCE=5V f=100MHz VCB=10V, f=1MHz IC=500mA, VCC=10V IB1=IB2=50mA ICBO Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio IEBO VCE(sat) Transition Frequency fT Output Capacitance Switching Times Cobo ton toff 1 TYP. V(BR)CEO hFE 400 20 0.01 PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). V V 1.0 0.01 C B 100 h - (Volts) V C E=2V 0.6 FZT649 ISSUE 4 FEBRUARY 1996 FEATURES * 25 Volt VCEO * 3 Amp continuous current * Low saturation voltage * Excellent hFE specified up to 6A 70 100 75 15 150 200 200 150 50 240 25 55 300 300 50 pF ns ns *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 205