ZETEX BCX70J-AJ

SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTOR
BCX70
BCX70
ISSUE 2 – FEBRUARY 95
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP.
Collector-Emitter Breakdown Voltage
V(BR)CEO
45
5
Emitter-Base Breakdown Voltage
V(BR)EBO
Collector-Emitter Cut-off Current
ICES
Emitter-Base Cut-Off Current
IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(SAT)
Base - Emitter Voltage
VBE
Static Forward Current
Transfer Ratio
BCX70G
V
20
20
IC=2mA
V
IEBO =1µA
nA
µA
VCES =45V
VCES =45V,
Tamb=150oC
B
nA
VEBO =4V
IC=10mA,IB = 0.25mA
IC= 50mA, IB=1.25mA
0.60
0.70
0.70
0.83
0.85
1.05
V
V
IC=10mA,IB=0.25mA,
IC =50mA, IB=1.25mA
PARAMETER
SYMBOL
VALUE
UNIT
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
45
V
0.75
V
V
V
VCES
0.55
0.52
0.65
0.78
Collector-Emitter Voltage
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
200
mA
Base Current
IB
50
mA
78
170
220
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
145
250
310
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
hFE
40
250
90
220
350
460
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
hFE
100
380
100
300
500
630
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
Transition Frequency
fT
125
250
Emitter-Base Capacitance
Cebo
Collector-Base Capacitance
Ccbo
Noise Figure
N
td
tr
ton
ts
tf
toff
E
C
V
V
20
180
70
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
AG
AH
AJ
AK
AW
9P
AX
P9
0.35
0.55
hFE
BCX70K
–
–
–
–
–
–
–
–
20
120
50
BCX70J
BCX70G
BCX70H
BCX70J
BCX70K
BCX70GR
BCX70HR
BCX70JR
BCX70KR
BCX71
0.12
0.20
hFE
BCX70H
PARTMARKING DETAIL –
MAX. UNIT CONDITIONS.
MHz
35
50
85
400
80
480
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
Spice parameter data is available upon request for this device
ABSOLUTE MAXIMUM RATINGS.
Power Dissipation at Tamb=25°C
PTOT
330
mW
Operating and Storage Temperature Range
tj:tstg
-55 to +150
°C
FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz)
hFE Group G
h11e
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
1.6
2.7
4.5
2.5
3.6
6.0
3.2
4.5
8.5
4.5
7.5
12
h12e
1.5
VEBO=0.5V, f =1MHz
h21e
200
VCBO=10V, f =1MHz
18
6
dB
IC= 0.2mA, VCE = 5V
RG =2KΩ, f=1KH
∆f=200Hz
h22e
800
IC:IB1:- IB2 =10:1:1mA
R1=5KΩ, R2=5KΩ
VBB =3.6V, RL=990Ω
hFE Group K
Max.
pF
150
hFE Group J
Typ.
pF
ns
ns
ns
ns
ns
ns
hFE Group H
Min.
4.5
8
2
IC =10mA, VCE =5V
f = 100MHz
COMPLEMENTARY TYPE –
2
2
260
30
24
30
520
60
50
SWITCHING CIRCUIT
-VBB
R2
VCC(+10V)
RL
1µsec
R1
+10V
tr < 5nsec
Mark/Space ratio < 0.01
Zs=50Ω
50Ω
PAGE NO
10-4
3
330
50
kΩ
tr < 5nsec
Zin ≥ 100kΩ
Oscilloscope
100
µS
SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTOR
BCX70
BCX70
ISSUE 2 – FEBRUARY 95
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP.
Collector-Emitter Breakdown Voltage
V(BR)CEO
45
5
Emitter-Base Breakdown Voltage
V(BR)EBO
Collector-Emitter Cut-off Current
ICES
Emitter-Base Cut-Off Current
IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(SAT)
Base - Emitter Voltage
VBE
Static Forward Current
Transfer Ratio
BCX70G
V
20
20
IC=2mA
V
IEBO =1µA
nA
µA
VCES =45V
VCES =45V,
Tamb=150oC
B
nA
VEBO =4V
IC=10mA,IB = 0.25mA
IC= 50mA, IB=1.25mA
0.60
0.70
0.70
0.83
0.85
1.05
V
V
IC=10mA,IB=0.25mA,
IC =50mA, IB=1.25mA
PARAMETER
SYMBOL
VALUE
UNIT
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
45
V
0.75
V
V
V
VCES
0.55
0.52
0.65
0.78
Collector-Emitter Voltage
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
200
mA
Base Current
IB
50
mA
78
170
220
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
145
250
310
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
hFE
40
250
90
220
350
460
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
hFE
100
380
100
300
500
630
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
Transition Frequency
fT
125
250
Emitter-Base Capacitance
Cebo
Collector-Base Capacitance
Ccbo
Noise Figure
N
td
tr
ton
ts
tf
toff
E
C
V
V
20
180
70
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
AG
AH
AJ
AK
AW
9P
AX
P9
0.35
0.55
hFE
BCX70K
–
–
–
–
–
–
–
–
20
120
50
BCX70J
BCX70G
BCX70H
BCX70J
BCX70K
BCX70GR
BCX70HR
BCX70JR
BCX70KR
BCX71
0.12
0.20
hFE
BCX70H
PARTMARKING DETAIL –
MAX. UNIT CONDITIONS.
MHz
35
50
85
400
80
480
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
Spice parameter data is available upon request for this device
ABSOLUTE MAXIMUM RATINGS.
Power Dissipation at Tamb=25°C
PTOT
330
mW
Operating and Storage Temperature Range
tj:tstg
-55 to +150
°C
FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz)
hFE Group G
h11e
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
1.6
2.7
4.5
2.5
3.6
6.0
3.2
4.5
8.5
4.5
7.5
12
h12e
1.5
VEBO=0.5V, f =1MHz
h21e
200
VCBO=10V, f =1MHz
18
6
dB
IC= 0.2mA, VCE = 5V
RG =2KΩ, f=1KH
∆f=200Hz
h22e
800
IC:IB1:- IB2 =10:1:1mA
R1=5KΩ, R2=5KΩ
VBB =3.6V, RL=990Ω
hFE Group K
Max.
pF
150
hFE Group J
Typ.
pF
ns
ns
ns
ns
ns
ns
hFE Group H
Min.
4.5
8
2
IC =10mA, VCE =5V
f = 100MHz
COMPLEMENTARY TYPE –
2
2
260
30
24
30
520
60
50
SWITCHING CIRCUIT
-VBB
R2
VCC(+10V)
RL
1µsec
R1
+10V
tr < 5nsec
Mark/Space ratio < 0.01
Zs=50Ω
50Ω
PAGE NO
10-4
3
330
50
kΩ
tr < 5nsec
Zin ≥ 100kΩ
Oscilloscope
100
µS