DPLS4140E LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) • • • • • COLLECTOR 2,4 Case: SOT-223 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish - Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.115 grams (approximate) C 4 1 BASE Maximum Ratings 2 C 1 B 3 EMITTER Top View 3 E TOP VIEW Device Schematic Pin Configuration @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Symbol VCBO VCEO VEBO IC ICM Value -180 -140 -7 -4 -10 Unit V V V A A Value 1 125 -55 to +150 Unit W °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C Operating and Storage Temperature Range Notes: Symbol PD RθJA TJ, TSTG 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DPLS4140E Document number: DS31279 Rev. 3 - 2 1 of 4 www.diodes.com October 2008 © Diodes Incorporated DPLS4140E Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit V(BR)CBO V(BR)CEO V(BR)EBO -180 -140 -7 -230 -190 -8.5 ⎯ ⎯ ⎯ V V V Collector Cutoff Current ICBO ⎯ ⎯ -20 -0.5 nA μA Emitter Cutoff Current ON CHARACTERISTICS (Note 4) IEBO ⎯ ⎯ -10 nA ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -40 -50 -75 -175 -60 -80 -120 -360 mV -910 -810 -1040 -930 mV mV hFE 100 100 45 ⎯ ⎯ ⎯ ⎯ 12 ⎯ 300 ⎯ ⎯ ⎯ fT ⎯ 150 ⎯ MHz Cobo ⎯ 55 ⎯ pF ton toff ⎯ ⎯ 85 430 ⎯ ⎯ ns Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage VBE(SAT) VBE(ON) DC Current Gain Test Condition IC = -100μA, IE = 0 IC = -10mA, IB = 0 IE = -100μA, IC = 0 VCB = -150V, IE = 0 VCB = -150V, IE = 0, TA = 100°C VEB = - 6V, IC = 0 IC = -0.1A, IB = -5mA IC = -0.5A, IB = -50mA IC = -1A, IB = -100mA IC = -3A, IB = -300mA IC = -3A, IB = -300mA IC = -3A, VCE = -5V IC = -10mA, VCE = -5V IC = -1A, VCE = -5V IC = -3A, VCE = -5V IC = -10A, VCE = -5V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Output Capacitance SWITCHING CHARACTERISTICS Switching Times IC = -100mA, VCE = -10V, f = 100MHz VCB = -10V, f = 1MHz IC = -1A, IB1 = -100mA IB2 = 100mA, VCC = -50V 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2% Notes: 0.8 IB = -5mA -IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (mW) 1.0 0.8 0.6 0.4 0.2 0.6 IB = -4mA IB = -3mA 0.4 IB = -2mA 0.2 IB = -1mA 0 0 25 50 150 100 125 75 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) DPLS4140E Document number: DS31279 Rev. 3 - 2 0 1 2 3 4 5 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage 2 of 4 www.diodes.com 0 October 2008 © Diodes Incorporated DPLS4140E 350 0.3 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 300 250 200 150 100 0.2 0.1 50 0.01 0.1 1 1.2 1 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current 200 fT, GAIN-BANDWIDTH PRODUCT (MHz) 1,000 f = 1MHz 150 100 VCE = -10V f = 100MHz 100 Cobo 10 0.1 0 0.001 10 -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 0 0.001 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics DPLS4140E Document number: DS31279 Rev. 3 - 2 50 0 20 30 40 50 60 70 80 90 100 -IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current 3 of 4 www.diodes.com 0 10 October 2008 © Diodes Incorporated DPLS4140E Ordering Information (Note 5) Part Number DPLS4140E-13 Notes: Case SOT-223 Packaging 2500/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YWW P414A P414A = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year (ex: 8 = 2008) WW = Week code 01 - 52 Package Outline Dimensions SOT-223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e — — 4.60 e1 — — 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm A A1 Suggested Pad Layout X1 Y1 C1 Y2 Dimensions X1 X2 Y1 Y2 C1 C2 Value (in mm) 3.3 1.2 1.6 1.6 6.4 2.3 C2 X2 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DPLS4140E Document number: DS31279 Rev. 3 - 2 4 of 4 www.diodes.com October 2008 © Diodes Incorporated