MMBT4124 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT4126) Ideal for Medium Power Amplification and Switching Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 4) Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) • • • • • • C E B Top View Maximum Ratings Device Schematic @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Symbol VCBO VCEO VEBO IC Value 30 25 5.0 200 Unit V V V mA Symbol PD RθJA TJ, TSTG Value 300 417 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 3) @TA = 25°C unless otherwise specified Symbol Min Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO 30 25 5.0 ⎯ ⎯ ⎯ ⎯ ⎯ 50 50 V V V nA nA IC = 10μA, IE = 0 IC = 1.0mA, IB = 0 IE = 10μA, IC = 0 VCB = 20V, IE = 0V VEB = 3.0V, IC = 0V hFE 120 60 ⎯ VCE(SAT) VBE(SAT) ⎯ ⎯ 360 ⎯ 0.30 0.95 IC = 2.0mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 50mA, IB = 5.0mA IC = 50mA, IB = 5.0mA Cobo Cibo ⎯ ⎯ 4.0 8.0 pF pF Small Signal Current Gain hfe 120 480 ⎯ Current Gain-Bandwidth Product fT 300 ⎯ MHz DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Notes: V V Test Condition VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 1.0V, IC = 2.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. Halogen and Antimony Free. 3. Short duration pulse test used to minimize self-heating effect. 4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. MMBT4124 Document number: DS30105 Rev. 11 - 2 1 of 3 www.diodes.com January 2009 © Diodes Incorporated MMBT4124 1,000 400 300 hFE, DC CURRENT GAIN PD, POWER DISSIPATION (mW) 350 250 200 150 100 100 10 RθJA = 417°C/W 50 0 1 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1) 0 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC IB = 10 0.1 0.01 0.1 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current 0.1 10 IC IB = 10 1 0.1 0.1 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Base-Emitter Saturation Voltage vs. Collector Current 15 CAPACITANCE (pF) f = 1MHz 10 5 Cibo Cobo 0 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 5 Typical Capacitance Characteristics MMBT4124 Document number: DS30105 Rev. 11 - 2 2 of 3 www.diodes.com January 2009 © Diodes Incorporated MMBT4124 Ordering Information (Note 5) Part Number MMBT4124-7-F Notes: Case SOT-23 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM K1B Date Code Key Year 1998 Code J Month Code 1999 K 2000 L Jan 1 2001 M Feb 2 2002 N Mar 3 2003 P Apr 4 K1B = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2004 2005 R S May 5 2006 T 2007 U Jun 6 2008 V Jul 7 2009 W Aug 8 2010 X 2011 2012 Y Z Sep 9 Oct O 2013 A Nov N 2014 B 2015 C Dec D Package Outline Dimensions A SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm B C H K M K1 D J F L G Suggested Pad Layout Y Z C X Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. MMBT4124 Document number: DS30105 Rev. 11 - 2 3 of 3 www.diodes.com January 2009 © Diodes Incorporated