ONSEMI MGSF2N02ELT1G

MGSF2N02EL
Preferred Device
Power MOSFET
2.8 Amps, 20 Volts, N−Channel SOT−23
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry.
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Features
•
•
•
•
2.8 A, 20 V
RDS(on) = 85 m (max)
Pb−Free Packages are Available
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT−23 Surface Mount Package Saves Board Space
IDSS Specified at Elevated Temperature
N−Channel
D
Applications
• DC−DC Converters
• Power Management in Portable and Battery Powered Products, ie:
G
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
S
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
Vdc
Gate−to−Source Voltage − Continuous
VGS
± 8.0
Vdc
ID
Rating
Drain Current
− Continuous @ TA = 25°C
− Single Pulse (tp = 10 s)
IDM
2.8
5.0
Total Power Dissipation @ TA = 25°C
PD
1.25
W
Operating and Storage Temperature
Range
TJ, Tstg
− 55 to
150
°C
Thermal Resistance
Junction−to−Ambient (Note 1)
Thermal Resistance
Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
MARKING
DIAGRAM
A
3
°C/W
RJA
100
SOT−23
CASE 318
STYLE 21
1
NT M
2
NT
M
= Device Code
= Date Code
300
TL
°C
260
PIN ASSIGNMENT
3
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. 1” Pad, t < 10 sec.
2. Min pad, steady state.
Drain
1
Gate
2
Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
 Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 2
1
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MGSF2N02EL/D
MGSF2N02EL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 10 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
20
−
−
22
−
−
Vdc
mV/°C
−
−
−
−
1.0
10
−
−
100
nA
0.5
−
−
−2.3
1.0
−
Vdc
mV/°C
−
−
78
105
85
115
Ciss
−
150
−
Coss
−
130
−
Crss
−
45
−
td(on)
−
6.0
−
tr
−
95
−
td(off)
−
28
−
tf
−
125
−
QT
−
3.5
−
Qgs
−
0.6
−
Qgd
−
1.5
−
−
−
0.76
−
1.2
−
trr
−
104
−
ta
−
42
−
tb
−
62
−
QRR
−
0.20
−
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate−Source Leakage Current (VGS = 8.0 Vdc, VDS = 0 Vdc)
IGSS
Adc
ON CHARACTERISTICS (Note 3)
Gate−Source Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance
(VGS = 4.5 Vdc, ID = 3.6 A)
(VGS = 2.5 Vdc, ID = 3.1 A)
RDS(on)
m
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0
5 0 Vdc,
Vd VGS = 0 V
V,
f = 1.0 MHz)
Output Capacitance
Transfer Capacitance
pF
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
(VDD = 16 Vdc, ID = 2.8 Adc,
Vgs = 4.5 V, RG = 2.3 )
Turn−Off Delay Time
Fall Time
Gate Charge
(VDS = 16 Vd
Vdc, ID = 1.75
1 75 Adc,
Ad
VGS = 4.0 Vdc) (Note 3)
ns
nC
SOURCE−DRAIN DIODE CHARACTERISTICS
VSD
Forward Voltage
(IS = 1.0 Adc, VGS = 0 Vdc) (Note 3)
Reverse Recovery Time
(IS = 1.0 Adc, VGS = 0 Vdc,
dlS/ dt = 100 A/s) (Note 3)
Reverse Recovery Stored Charge
V
ns
C
3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
ORDERING INFORMATION
Package
Shipping†
SOT−23
3,000 Tape & Reel
SOT−23
(Pb−Free)
3,000 Tape & Reel
SOT−23
10,000 Tape & Reel
SOT−23
(Pb−Free)
10,000 Tape & Reel
Device
MGSF2N02ELT1
MGSF2N02ELT1G
MGSF2N02ELT3
MGSF2N02ELT3G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MGSF2N02EL
5
VGS = 10 V
VGS = 7 V
VGS = 5 V
6
VGS = 2.2 V
VGS = 2.0 V
VGS = 2.6 V
4
VGS = 1.8 V
VGS = 3 V
VGS = 1.6 V
2
VDS 10 V
TJ = 25°C
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
8
4
3
2
TJ = 55°C
TJ = 100°C
1
VGS = 1.2 V
0
0
0
0.5
1
1.5
2
2.5
0
1.5
2
2.5
3
Figure 2. Transfer Characteristics
0.3
0.12
TJ = 25°C
RDS(on), DRAIN−TO−SOURCE
RESISTANCE ()
RDS(on), DRAIN−TO−SOURCE
RESISTANCE ()
1
VGS, GATE−TO−SOURCE VOLTAGE (V)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
TJ = 25°C
0.10
ID = 3.6 A
0.2
0.08
0.06
0.1
0.04
VGS = 2.5 V
0
0.02
0
2
4
6
4
8
VGS, GATE−TO−SOURCE VOLTAGE (V)
1.8
6
7
8
Figure 4. On−Resistance vs. Gate Voltage
10000
ID = 3.6 A
VGS = 4.5 V
VGS = 0 V
IDSS, LEAKAGE (nA)
1.5
1.2
0.9
0.6
−50
5
−ID, DRAIN CURRENTS (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source Voltage
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
0.5
−25
0
25
50
75
100
125
150
TJ = 150°C
1000
TJ = 100°C
100
10
4
TJ, JUNCTION TEMPERATURE (°C)
8
12
16
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Temperature
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3
Figure 6. Drain−to−Source Leakage
Current vs. Voltage
20
MGSF2N02EL
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = 25°C
300
C, CAPACITANCE (pF)
250
200
150
Ciss
100
Coss
50
Crss
0
0
4
8
12
16
20
5
QT
4
3
Q1
Q2
2
1
0
ID = 3.6 A
TJ = 25°C
0
1
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
2
3
Qg, TOTAL GATE CHARGE, (nC)
Figure 8. Gate−to−Source Voltage vs. Total Charge
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
350
1.8
1000
IS, SOURCE CURRENT (AMPS)
VDD = 16 V
ID = 2.8 A
VGS = 4.5 V
tf
100
t, TIME (ns)
tr
td(off)
10
td(on)
10
VGS = 4.5 V
TJ = 25°C
1.2
0.9
0.6
0.3
0
0.20
1
1
1.5
100
RG, GATE RESISTANCE ()
0.30
0.40
0.50
0.60
0.70
0.80
0.90
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation vs.
Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
1.00
MGSF2N02EL
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AJ
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
L
3
1
V
B S
2
G
DIM
A
B
C
D
G
H
J
K
L
S
V
C
D
H
J
K
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
MGSF2N02EL
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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Phone: 81−3−5773−3850
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6
For additional information, please contact your
local Sales Representative.
MGSF2N02EL/D