MGSF1N02LT1 Preferred Device Power MOSFET 750 mAmps, 20 Volts N−Channel SOT−23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc−dc converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. http://onsemi.com 750 mAMPS, 20 VOLTS RDS(on) = 90 mW N−Channel 3 Features • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT−23 Surface Mount Package Saves Board Space • Pb−Free Packages are Available 1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) 2 Symbol Value Unit Drain−to−Source Voltage VDSS 20 Vdc Gate−to−Source Voltage − Continuous VGS ± 20 Vdc MARKING DIAGRAM/ PIN ASSIGNMENT Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp ≤ 10 ms) ID IDM 750 2000 mA 3 Drain PD 400 mW Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Thermal Resistance, Junction−to−Ambient RqJA 300 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C Rating Total Power Dissipation @ TA = 25°C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1 SOT−23 CASE 318 STYLE 21 N2 M G G 1 Gate 2 Source N2 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MGSF1N02LT1 SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel SOT−23 10,000/Tape & Reel MGSF1N02LT1G MGSF1N02LT3 MGSF1N02LT3G SOT−23 10,000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 December, 2005 − Rev. 4 1 Publication Order Number: MGSF1N02LT1/D MGSF1N02LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 20 − − Vdc − − − − 1.0 10 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 mAdc) mAdc Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − − ±100 nAdc Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) VGS(th) 1.0 1.7 2.4 Vdc Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 1.2 Adc) (VGS = 4.5 Vdc, ID = 1.0 Adc) rDS(on) − − 0.075 0.115 0.090 0.130 ON CHARACTERISTICS (Note 1) W DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 Vdc) Ciss − 125 − Output Capacitance (VDS = 5.0 Vdc) Coss − 120 − Transfer Capacitance (VDG = 5.0 Vdc) Crss − 45 − td(on) − 2.5 − tr − 1.0 − td(off) − 16 − tf − 8.0 − QT − 6000 − pC IS − − 0.6 A Pulsed Current ISM − − 0.75 − Forward Voltage (Note 2) VSD − 0.8 − V pF SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time Rise Time (VDD = 15 Vdc, ID = 1.0 Adc, RL = 50 W) Turn−Off Delay Time Fall Time Gate Charge (See Figure 6) ns SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Current 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. TYPICAL ELECTRICAL CHARACTERISTICS 3 VDS = 10 V I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) 2.5 2 − 55°C 1.5 TJ = 150°C 1 0.5 0 1.5 2 2.5 3.25 V 3.5 V 2 VGS = 3.0 V 1.5 2.75 V 1 2.5 V 0.5 25°C 1 4V 2.5 2.25 V 3 0 3.5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0 2 4 6 8 3 5 7 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 1. Transfer Characteristics Figure 2. On−Region Characteristics http://onsemi.com 2 1 9 10 MGSF1N02LT1 0.2 150°C 0.18 0.16 VGS = 4.5 V 0.14 25°C 0.12 −55°C 0.1 0.08 0.06 0.04 0 0.1 0.3 0.2 0.4 0.5 0.6 0.7 0.8 0.9 1 R DS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS) R DS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS) TYPICAL ELECTRICAL CHARACTERISTICS 0.14 0.13 150°C 0.12 VGS = 10 V 0.11 0.1 0.09 25°C 0.08 0.07 −55°C 0.06 0.05 0.04 0 0.2 0.4 0.6 ID, DRAIN CURRENT (AMPS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) RDS(on) , DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.6 VGS = 10 V ID = 2 A 1.4 1.3 VGS = 4.5 V ID = 1 A 1.2 1.1 1 0.9 0.8 0.7 0.6 −55 −5 45 95 10 8 1.6 1.4 1.8 2 6 4 0 145 ID = 2.0 A 2 0 1000 2000 3000 4000 5000 6000 QT, TOTAL GATE CHARGE (pC) Figure 6. Gate Charge Figure 5. On−Resistance Variation with Temperature 1 1000 TJ = 150°C 0.1 25°C −55°C C, CAPACITANCE (pF) I D , DIODE CURRENT (AMPS) 1.2 VDS = 16 V TJ = 25°C TJ, JUNCTION TEMPERATURE (°C) 0.01 0.001 1 Figure 4. On−Resistance versus Drain Current Figure 3. On−Resistance versus Drain Current 1.5 0.8 ID, DRAIN CURRENT (AMPS) 0 0.2 0.4 0.6 Ciss 100 Coss Crss 10 1 0.8 VGS = 0 V f = 1 MHz TJ = 25°C 0 5 10 15 VDS, DRAIN−TO−SOURCE VOLTAGE (Volts) VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 7. Body Diode Forward Voltage Figure 8. Capacitance http://onsemi.com 3 20 MGSF1N02LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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