MJE2955T (PNP) MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS • DC Current Gain Specified to 10 A • High Current Gain − Bandwidth Product − • http://onsemi.com fT = 2.0 MHz (Min) @ IC = 500 mAdc Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit VCEO 60 Vdc Collector−Base Voltage VCB 70 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector Current IC 10 Adc Base Current IB 6.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD (Note 1) 75 0.6 W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C Symbol Max Unit qJC 1.67 °C/W Collector−Emitter Voltage TO−220AB CASE 221A−09 STYLE 1 1 2 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed. MJExx55TG AY WW MJExx55T = Device Code xx = 29 or 30 G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 January, 2010 − Rev. 9 1 Publication Order Number: MJE2955T/D MJE2955T (PNP) MJE3055T (NPN) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max 60 − − 700 − − 1.0 5.0 − − 1.0 10 − 5.0 20 5.0 100 − − − 1.1 8.0 − 1.8 2.0 − Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 200 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) ICEO Collector Cutoff Current (VCE = 70 Vdc, VEB(off) = 1.5 Vdc) (VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150°C) ICEX Collector Cutoff Current (VCB = 70 Vdc, IE = 0) (VCB = 70 Vdc, IE = 0, TC = 150°C) ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO Vdc mAdc mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 2) (IC = 4.0 Adc, VCE = 4 0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE Collector−Emitter Saturation Voltage (Note 2) (IC = 4.0 Adc, IB = 0.4 Adc) (IC = 10 Adc, IB = 3.3 Adc) VCE(sat) Base−Emitter On Voltage (Note 2) (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) − Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain−Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz) fT MHz 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 20%. IC, COLLECTOR CURRENT (AMP) 10 7.0 5.0 5.0 ms 1.0ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on TJ(pk) = 150°C. TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150°C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. (See AN415A) 100ms dc 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 5.0 TJ = 150°C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED TC = 25°C (D = 0.1) 20 30 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 50 60 Figure 1. Active−Region Safe Operating Area http://onsemi.com 2 MJE2955T (PNP) MJE3055T (NPN) 500 90 VCE = 2.0 V TJ = 150°C 100 25°C 50 -55°C 30 20 10 5.0 0.01 0.02 5.0 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 80 PD, POWER DISSIPATION (WATTS) hFE, DC CURRENT GAIN 300 200 70 60 50 MJE3055T MJE2955T 40 30 20 10 0 10 0 125 50 75 100 TC, CASE TEMPERATURE (°C) 25 Figure 2. DC Current Gain 150 175 5.0 10 Figure 3. Power Derating MJE2955T MJE3055T 2.0 1.4 TJ = 25°C 1.2 TJ = 25°C V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.6 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 3.0 V 0.4 1.0 0.8 0.6 VBE @ VCE = 2.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 0 0.1 VBE(sat) @ IC/IB = 10 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 0 0.1 10 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) Figure 4. “On” Voltages ORDERING INFORMATION Device MJE2955T MJE2955TG MJE3055T MJE3055TG Package Shipping TO−220 TO−220 (Pb−Free) TO−220 TO−220 (Pb−Free) http://onsemi.com 3 50 Units / Rail MJE2955T (PNP) MJE3055T (NPN) PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF −T− B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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