DMN3404L N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) Drain D Gate TOP VIEW Maximum Ratings S G Source Internal Schematic TOP VIEW @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Steady State Units V V IDM Value 30 ±20 5.8 4.9 30 Symbol PD RθJA TJ, TSTG Value 1.4 90 -55 to +150 Unit W °C/W °C TA = 25°C TA = 70°C ID Pulsed Drain Current A A Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on 1 in2 FR-4 PCB with 2oz. Copper. The value in any given application depends on the user’s specific board design. DMN3404L Document number: DS31787 Rev. 2 - 2 1 of 6 www.diodes.com June 2009 © Diodes Incorporated DMN3404L @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1.0 1.5 24 2.0 28 V VDS = VGS, ID = 250μA VGS = 10V, ID = 5.8A Static Drain-Source On-Resistance RDS (ON) - |Yfs| VSD - 33 10 0.75 42 1.0 S V Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 386 44 39 1.51 9.2 1.2 1.8 3.41 6.18 13.92 2.84 - pF pF pF Ω nC nC nC ns ns ns ns Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ Test Condition VGS = 4.5V, ID = 4.8A VDS = 5V, ID = 5.8A VGS = 0V, IS = 1A VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 10V, VDS = 15V, ID = 5.8A VDD = 15V, VGS = 10V, RL = 2.6Ω, RG = 3Ω 4. Short duration pulse test used to minimize self-heating effect. 20 20 VGS = 8V VGS = 4.5V 16 ID, DRAIN CURRENT (A) 16 ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics VDS = 5V 12 12 VGS = 3.0V 8 8 TA = 150°C 4 4 TA = 125°C TA = 85°C TA = 25°C VGS = 2.0V 0 0 0.5 VGS = 2.5V 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMN3404L Document number: DS31787 Rev. 2 - 2 5 2 of 6 www.diodes.com 0 1.5 TA = -55°C 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 4 June 2009 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.3 0.25 0.2 VGS = 2.5V 0.15 0.1 0.05 VGS = 4.5V 0 0.1 VGS = 8.0V 1 10 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.08 VGS = 4.5V TA = 125°C TA = 85°C 0.04 TA = 25°C TA = -55°C 0.02 0 0 100 4 8 12 16 ID, DRAIN CURRENT (A) 20 Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 0.07 0.06 1.6 RDSON , DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) T A = 150°C 0.06 1.8 VGS = 10V ID = 10A 1.4 VGS = 4.5V ID = 5.0A 1.2 1.0 0.8 0.05 VGS = 4.5V ID = 5.0A 0.04 0.03 VGS = 10V ID = 10A 0.02 0.01 0 -50 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 20 2 18 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMN3404L 1.6 ID = 1mA ID = 250µA 1.2 16 TA = 25°C 14 12 10 8 6 4 2 0.8 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMN3404L Document number: DS31787 Rev. 2 - 2 3 of 6 www.diodes.com 0 0.5 0.6 0.7 0.8 0.9 1 1.1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 June 2009 © Diodes Incorporated DMN3404L 1,000 10,000 IDSS, LEAKAGE CURRENT (nA) NEW PRODUCT C, CAPACITANCE (pF) f = 1MHz Ciss 100 Coss Crss 1,000 TA = 150°C TA = 125°C 100 10 T A = 85°C T A = -55°C 10 TA = 25°C 1 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 0 30 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) 30 Fig. 10 Typical Leakage Current vs. Drain-Source Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 163°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response Ordering Information (Note 5) Part Number DMN3404L-7 Notes: Case SOT-23 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. YM Marking Information 34N Date Code Key Year Code Month Code 2009 W Jan 1 2010 X Feb 2 DMN3404L Document number: DS31787 Rev. 2 - 2 Mar 3 34N = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 2011 Y Apr 4 May 5 2012 Z Jun 6 4 of 6 www.diodes.com 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D June 2009 © Diodes Incorporated DMN3404L Package Outline Dimensions A SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm NEW PRODUCT B C H K M K1 D F J L G Suggested Pad Layout Y Z C X DMN3404L Document number: DS31787 Rev. 2 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com June 2009 © Diodes Incorporated DMN3404L IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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