DMG1024UV NEW PRODUCT DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 1) ESD Protected Up To 2KV "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability ESD PROTECTED TO 2kV Maximum Ratings • • • • • • Case: SOT-563 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminals: Finish ۛ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.006 grams (approximate) D2 G1 S1 S2 G2 D1 TOP VIEW BOTTOM VIEW TOP VIEW @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Steady State TA = 25°C TA = 85°C Pulsed Drain Current (Note 4) Unit V V IDM Value 20 ±6 1.38 0.89 3 Symbol PD RθJA TJ, TSTG Max 530 235 -55 to +150 Unit mW °C/W °C ID A A Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3) Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature. DMG1024UV Document number: DS31974 Rev. 5 - 2 1 of 6 www.diodes.com April 2010 © Diodes Incorporated DMG1024UV @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - 100 ±1.0 V nA μA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) 0.5 RDS (ON) - |Yfs| VSD - 1.0 0.45 0.6 0.75 9 10 1.2 V Static Drain-Source On-Resistance 0.3 0.4 0.5 1.4 0.7 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 600mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VGS = 1.7V, ID = 140mA VGS = 1.5V, ID = 100mA VDS = 10V, ID = 400mA VGS = 0V, IS = 150mA Ciss Coss Crss Qg Qgs Qgd tD(on) tr tD(off) tf - 60.67 9.68 5.37 736.6 93.6 116.6 5.1 7.4 26.7 12.3 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Ω S V pF pF pF pC pC pC ns ns ns ns Test Condition VDS = 16V, VGS = 0V, f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. 1.5 1.5 VGS = 8.0V VGS = 4.5V 1.2 1.2 VGS = 3.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics VGS = 2.5V VGS = 2.0V 0.9 0.6 VGS = 1.5V 0.3 VDS = 5V 0.9 0.6 TA = 150°C TA = 125°C 0.3 T A = 85°C TA = 25°C TA = -55°C VGS = 1.2V 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMG1024UV Document number: DS31974 Rev. 5 - 2 0 5 0 0.5 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE (V) 3 Fig. 2 Typical Transfer Characteristics 2 of 6 www.diodes.com April 2010 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.8 0.7 0.6 0.5 VGS = 1.8V 0.4 VGS = 2.5V 0.3 VGS = 4.5V 0.2 0.1 0 0 0.3 0.6 0.9 1.2 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 2.5V ID = 500mA VGS = 4.5V ID = 1.0A 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature TA = 150°C 0.4 TA = 125°C TA = 85°C 0.3 T A = 25°C 0.2 T A = -55°C 0.1 0 0.3 0.6 0.9 1.2 1.5 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.8 0.6 VGS = 2.5V ID = 500mA 0.4 VGS = 4.5V ID = 1.0A 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 1.6 IS, SOURCE CURRENT (A) 10 1.2 0.8 VGS = 4.5V 0.5 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.5 1.3 0.6 1.5 1.7 VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMG1024UV ID = 250µA 0.4 8 6 T A = 25°C 4 2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMG1024UV Document number: DS31974 Rev. 5 - 2 3 of 6 www.diodes.com 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 April 2010 © Diodes Incorporated DMG1024UV IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 100 NEW PRODUCT C, CAPACITANCE (pF) Ciss 10 C oss Crss 1 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 1,000 TA = 150°C 100 TA = 125°C 10 T A = 85°C TA = 25°C 1 0 20 4 8 12 16 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 260°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 Ordering Information 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response 100 1,000 (Note 7) Part Number DMG1024UV-7 Notes: 10 Case SOT-563 Packaging 3000 / Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information NA1 Date Code Key Year Code Month Code 2009 W Jan 1 YM 2010 X Feb 2 DMG1024UV Document number: DS31974 Rev. 5 - 2 Mar 3 NA1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 2011 Y Apr 4 May 5 2012 Z Jun 6 4 of 6 www.diodes.com 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D April 2010 © Diodes Incorporated DMG1024UV Package Outline Dimensions A NEW PRODUCT B C D G M K SOT-563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm H L Suggested Pad Layout C2 Z C2 Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 C1 G Y X DMG1024UV Document number: DS31974 Rev. 5 - 2 5 of 6 www.diodes.com April 2010 © Diodes Incorporated DMG1024UV IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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