DCX4710H Lead-free Green 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS NEW PRODUCT General Description · DCX4710H is best suited for applications where the load needs to be turned on and off using micro-controllers, comparators or other control circuits particularly at a point of load. It features a discrete pre-based PNP transistor which can support continuous maximum current of 100 mA. It also contains a pre-based NPN transistor which can be used as a control and can be biased using a higher supply. The component devices can be used as a part of circuit or as stand alone discrete devices. 4 5 6 3 2 1 Fig. 1: SOT-563 Features · · · · · Built in Biasing Resistors CQ1 Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes 6 BQ2 EQ2 5 4 Lead Free By Design/ROHS Compliant (Note 1) "Green" Device (Note 2) R2 Mechanical Data Q2 R1 10k Q1 · · Case: SOT-563 · · · Moisture Sensitivity: Level 1 per J-STD-020C · · · Marking & Type Code Information: See Page 7 DDTC114EE_DIE 10k R2 Case Material: Molded Plastic. "Green Molding" Compound. UL Flammability Classification Rating 94V-0 47k 1 Terminal Connections: See Fig. 2 Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 10k R1 DDTA114YE_DIE EQ1 2 3 BQ1 CQ2 Fig. 2: Schematic and Pin Configuration Ordering Information: See Page 7 Weight: 0.005 grams (approximate) Sub-Component P/N Reference Device Type R1 (NOM) R2 (NOM) DDTA114YE_DIE Q1 PNP 10KW 47KW 2 DDTC114EE_DIE Q2 NPN 10KW 10KW 2 Maximum Ratings: Total Device Figure @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Pd 150 mW Power Derating Factor above 45°C Pder 1.43 mW/°C Output Current Iout 100 mA Power Dissipation (Note 3) Thermal Characteristics @ TA = 25°C unless otherwise specified Symbol Value Unit Junction Operation and Storage Temperature Range Characteristic Tj, Tstg -55 to +150 °C Thermal Resistance, Junction to Ambient Air (Note 3) (Equivalent to one heated junction of PNP transistor) RqJA 833 °C/W Notes: 1. No purposefully added lead. 2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; as per Diodes Inc. suggested pad layout document AP02001 on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30871 Rev. 3 - 2 1 of 8 www.diodes.com DCX4710H ã Diodes Incorporated NEW PRODUCT Sub-Component Device - Pre-Biased PNP Transistor (Q1) Characteristic @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Supply Voltage VCC -50 V Input Voltage VIN +6 to -40 V IC(max) -100 mA Output Current (dc) Sub-Component Device - Pre-Biased PNP Transistor (Q1) Characteristic @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Supply Voltage VCC 50 V Input Voltage VIN -10 to +40 V IC(max) 100 mA Output Current (dc) Electrical Characteristics: Pre-Biased PNP Transistor (Q1) Characteristic @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Conditions Collector-Base Cut Off Current ICBO ¾ ¾ -100 nA VCB = -50V, IE = 0 Collector-Emitter Cut Off Current ICEO ¾ ¾ -1 mA VCE = -50V, IB = 0 Emitter-Base Cut Off Current IEBO ¾ ¾ -500 mA VEB = -5V, IC = 0 Collector-Base Breakdown Voltage V(BR)CBO -50 ¾ ¾ V IC = -10 mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -50 ¾ ¾ V IC = -2 mA, IB = 0 VOH -4.6 ¾ ¾ V VCC = -5V, VB = -0.05V, RL = 1KW Input Off Voltage VI(OFF) ¾ -0.71 -0.5 V VCE = -5V, IC = -100mA Ouput Off Current IO(OFF) ¾ ¾ -1 mA VCC = -50V, VI = 0V ¾ -0.066 -0.1 ¾ -0.078 -0.1 IC = -10mA, IB = -0.3mA IC = -10mA, IB = -1mA OFF CHARACTERISTICS Output Off Voltage ON CHARACTERISTICS Collector-Emitter Saturation Voltage Equivalent on-resistance* DC Current Gain VCE(SAT) RCE(SAT) hFE IC = 5 mA, IB = -0.25 mA ¾ -0.06 -0.1 ¾ -0.04 -0.1 ¾ -0.99 -1.15 IC = -100mA, IB= -5mA ¾ 0.99 -1.15 IC = -100mA, IB = -10mA V IC = -10mA, IB= -5mA ¾ ¾ 3.5 W IC = -100mA, IB = -10mA 50 ¾ ¾ ¾ VCE = -5V, IC = -1 mA 130 ¾ ¾ ¾ VCE = -5V, IC =- 5 mA 180 ¾ ¾ ¾ VCE = -5V, IC = -50 mA 100 ¾ ¾ ¾ VCE = -5V, IC = -100 mA 140 ¾ ¾ ¾ VCE = -10V, IC = -5 mA V VCC = -5V, VB = -2.5V, RL = 1KW VOL ¾ -0.185 VI(ON) -1.25 -0.9 ¾ V Ii ¾ ¾ -0.88 mA Base-Emitter Turn-on Voltage VBE(ON) ¾ -0.72 -0.8 V VCE = -5V, IC = 100mA Base-Emitter Saturation Voltage VBE(SAT) ¾ -1.15 -1.25 V IC = 1mA, IB = 50mA DR1 7 10 13 KW ¾ R2 32 47 62 KW ¾ D(R2/R1) 20 ¾ 20 % ¾ Output On Voltage Input On Voltage (Load is on) Input Current Input Resistor +/- 30% (Base) Pull-up Resistor (Base to Vcc supply) Resistor Ratio DS30871 Rev. 3 - 2 2 of 8 www.diodes.com -0.22 VO = -0.3V, IC = -2 mA VI = -5V DCX4710H NEW PRODUCT Electrical Characteristics: Pre-Biased PNP Transistor (Q1) ( Continued ) SMALL SIGNAL CHARACTERISTICS Transition Frequency (gain bandwidth product) fT ¾ 200 ¾ MHz Collector capacitance (Ccbo-Output Capacitance) CC ¾ 5 ¾ pF VCE = -10V, IE = -5mA, f = 100MHz VCB = -10V, IE = 0A, f = 1MHz *Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02 Pre-Biased NPN Transistor (Q2) Characteristic @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Conditions Collector-Base Cut Off Current ICBO ¾ ¾ 100 nA VCB = 50V, IE = 0 Collector-Emitter Cut Off Current ICEO ¾ ¾ 1 mA VCE = 50V, IB = 0 Emitter-Base Cut Off Current IEBO ¾ ¾ 500 mA VEB = 5V, IC = 0 Collector-Base Breakdown Voltage V(BR) CBO 50 ¾ ¾ V IC = 10 mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR) CEO 50 ¾ ¾ V IC = 2 mA, IB = 0 OFF CHARACTERISTICS VOH 4.6 ¾ ¾ V VCC = 5V, VB = 0.05V, RL = 1KW Input Off Voltage V I(OFF) ¾ 1.2 0.8 V VCE = 5V, IC = 100mA Ouput Current IO (OFF) ¾ ¾ 1 mA VCC = 50V, VI = 0V ¾ 0.06 0.1 Output Off Voltage ON CHARACTERISTICS Collector-Emitter Saturation Voltage Equivalent on-resistance* VCE (SAT) RCE (SAT) IC = 5 mA, IB = 0.25 mA ¾ 0.06 0.1 IC = 10mA, IB = 0.5mA ¾ 0.042 0.06 IC = 10mA, IB = 1mA ¾ 0.026 0.04 ¾ 0.272 0.35 V IC = 10mA, IB= 5mA IC = 100mA, IB= 5mA ¾ 0.28 0.35 ¾ ¾ 3.5 W IC = 100mA, IB = 10mA 12 ¾ ¾ ¾ VCE = 5V, IC = 1 mA IC = 100mA, IB = 10mA 45 ¾ ¾ ¾ VCE = 5V, IC = 5 mA 130 ¾ ¾ ¾ VCE = 5V, IC = 50 mA 70 ¾ ¾ ¾ VCE = 5V, IC = 100 mA 40 58 ¾ ¾ VCE = 10V, IC = 5 mA VOL ¾ 0.12 0.2 V VCC = 5V, VB = 2.5V, RL = 1KW VI (ON) 2.8 1.6 ¾ V Ii ¾ ¾ 0.88 mA Base-Emitter Turn-on Voltage VBE(ON) ¾ ¾ 1.195 V VCE = 5V, IC = 100mA Base-Emitter Saturation Voltage VBE(SAT) ¾ ¾ 1.02 V IC = 1mA, IB = 50mA R1 7 10 13 KW ¾ (R2/R1) 0.8 1 1.2 ¾ ¾ Transition Frequency (Gain bandwidth product) fT ¾ 250 ¾ MHz Collector capacitance (Ccbo-Output Capacitance) CC ¾ 4 ¾ pF DC Current Gain Output On Voltage Input On Voltage Input Current Input Resistor +/- 30% (Base) Resistor Ratio hFE VO = 0.3V, IC = 2 mA VI = 5V SMALL SIGNAL CHARACTERISTICS VCE = 10V, IE = 5mA, f = 100MHz VCB = 10V, IE = 0A, f = 1MHz *Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02 DS30871 Rev. 3 - 2 3 of 8 www.diodes.com DCX4710H Typical Characteristics @ Tamb = 25°C unless otherwise specified PD, POWER DISSIPATION (mW) NEW PRODUCT 250 200 150 100 50 0 0 25 50 75 125 100 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 3 Power Derating Curve Characteristics Curves of PNP Transistor (Q1) @ Tamb = 25°C unless otherwise specified 0.1 lb = 1.75mA VCE = 5V lb = 1.5mA lb = 1.25mA 0.08 lb = 2mA 0.07 0.06 lb = 0.5mA 0.05 0.04 lb = 0.25mA 0.03 lb = 0.75mA 0.02 TA = 125° C 300 TA = 85° C 250 TA = 25° C 200 150 TA = -55° C 100 lb = 1mA 50 0.01 0 0 0 0.4 0.6 0.8 0.2 1 1.2 1.4 1.6 1.8 2 0.1 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 4 VCE vs. IC 100 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 DC Current Gain vs. IC 1000 100 Ic/Ib = 10 Ic/Ib = 20 VCE(SAT), COLLECTOR VOLTAGE (V) VCE(SAT), COLLECTOR VOLTAGE (V) TA = 150° C 350 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) 0.09 400 lb = 2.25mA 10 1 TA = 150° C TA = 125° C 0.1 TA = -55° C TA = 25° C 10 1 TA = 150° C TA = 125° C 0.1 TA = -55° C TA = 85° C TA = 25° C TA = 85° C 0.01 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 IC vs. VCE(SAT) DS30871 Rev. 3 - 2 1000 4 of 8 www.diodes.com 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 IC vs. VCE(SAT) 1000 DCX4710H 8 15 7 VBE(SAT), BASE-EMITTER VOLTAGE (V) VBE(ON), BASE-EMITTER VOLTAGE (V) 13.5 12 10.5 9 7.5 6 4.5 TA = 125° C 3 TA = 25° C TA = 85° C TA = -55° C 1.5 0.1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 8 IC vs. VBE(ON) TA = -55° C 6 5 TA = 125° C 4 TA = 85° C 3 TA = 25° C 2 1 TA = 150° C 0 TA = 150° C 0 0.1 100 15 VCE = 0.3V TA = -55° C 12 TA = 25° C 9 12 VI(ON), INPUT VOLTAGE (V) VBE(SAT), BASE-EMITTER VOLTAGE (V) 100 1 10 IC, COLLECTOR CURRENT (mA) Fig. 9 IC vs. VBE(SAT) 15 Ic/Ib = 10 TA = 85° C TA = 125° C 6 9 6 TA = 125° C TA = 25° C 3 3 TA = 150° C TA = 85° C TA = 150° C TA = -55° C 0 0 0.1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 10 IC vs. VBE(SAT) 0.1 100 Characteristics Curves of NPN Transistor (Q2) 1 10 100 IC, OUTPUT CURRENT (mA) Fig. 11 Input Voltage vs. Collector Current @ Tamb = 25°C unless otherwise specified 0.1 300 VCE = 5V IC, COLLECTOR CURRENT (A) TA = 150° C TA = 125° C 200 TA = 85° C 150 100 TA = 25° C 50 lb = 1.5mA 0.09 250 hFE, DC CURRENT GAIN NEW PRODUCT Ic/Ib = 20 VCE = 5V TA = -55° C lb = 2mA lb = 1.75mA lb = 1.25mA 0.08 0.07 0.06 lb = 0.5mA 0.05 0.04 lb = 0.25mA 0.03 lb = 0.75mA 0.02 lb = 1mA 0.01 0 0 0.1 DS30871 Rev. 3 - 2 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 12 DC Current Gain vs. IC 1000 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 13 VCE vs. IC 5 of 8 www.diodes.com DCX4710H 100 100 Ic/Ib = 20 VCE(SAT), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(SAT), COLLECTOR EMITTER SATURATION VOLTAGE (V) 10 1 TA = 150° C TA = 125° C 0.1 TA = -55° C TA = 25° C 10 1 TA = 150° C TA = 125° C 0.1 TA = -55° C TA = 85° C 1 0.1 10 100 1000 1 0.1 TA = 85° C 25 100 1000 30 Ic/Ib = 20 VCE = 5V 27 VBE(SAT), BASE-EMITTER VOLTAGE (V) 22.5 20 17.5 15 12.5 10 7.5 TA = 125° C 5 TA = 85° C TA = 25° C TA = -55° C 2.5 24 21 18 15 1 10 IC, COLLECTOR CURRENT (mA) Fig. 16 IC vs. VBE(ON) TA = 125° C 12 9 3 0 0.1 100 TA = 150° C TA = 85° C TA = 25° C 6 TA = 150° C 0 0.1 TA = -55° C 100 1 10 IC, COLLECTOR CURRENT (mA) Fig. 17 IC vs. VBE(SAT) 25 30 Ic/Ib = 10 22.5 27 24 VI(ON), INPUT VOLTAGE (V) TA = 125° C 18 15 TA = 85° C 12 9 TA = 25° C 6 0 0.1 DS30871 Rev. 3 - 2 17.5 15 12.5 TA = 125° C 10 7.5 5 2.5 TA = -55° C VCE = 0.3V 20 TA = 150° C 21 3 10 IC, COLLECTOR CURRENT (mA) Fig. 15 IC vs. VCE(SAT) IC, COLLECTOR CURRENT (mA) Fig. 14 IC vs. VCE(SAT) VBE(ON), BASE-EMITTER VOLTAGE (V) TA = 25° C 0.01 0.01 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) NEW PRODUCT Ic/Ib = 10 TA = 25° C TA = 85° C TA = -55° C TA = 150° C 1 10 IC, COLLECTOR CURRENT (mA) Fig. 18 IC vs. VBE(SAT) 100 6 of 8 www.diodes.com 0 0.1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 19 Input Voltage vs. Output Current 100 DCX4710H NEW PRODUCT Ordering Information Notes: (Note 5) Device Marking Code Packaging Shipping DCX4710H-7 C02 SOT-563 3000/Tape & Reel 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information C02 = Product Type Marking Code YM = Date Code Marking Y = Year e.g., T = 2006 M = Month e.g., 9 = September C02YM Fig. 20 Date Code Key Year 2006 2007 2008 2009 Code T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30871 Rev. 3 - 2 7 of 8 www.diodes.com DCX4710H NEW PRODUCT Mechanical Details SOT-563 A C02YM Max Typ 0.15 0.3 0.25 1.1 1.25 1.2 1.7 1.6 Dim Min A B C 1.55 B C D D G G M K H 0.5 0.9 1.1 1 H 1.5 1.7 1.6 K 0.56 0.6 0.6 L 0.15 0.25 0.2 M 0.1 0.18 0.11 All Dimensions in mm L Fig. 21 Suggested Pad Layout: (Based on IPC-SM-782) E Z E Figure 4 Dimensions SOT-563 C G Y Z 2.2 G 1.2 X 0.375 Y 0.5 C 1.7 E 0.5 X Fig. 22 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes incorporated. DS30871 Rev. 3 - 2 8 of 8 www.diodes.com DCX4710H