DCX100NS 100mA DUAL PRE-BIASED TRANSISTORS Please click here to visit our online spice models database. General Descriptions • DCX100NS is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete PNP pass transistor which can support continuous maximum current up to 100 mA. It also contains an NPN transistor which can be used as a control switch and can also be biased using higher supply. The component devices can be used as part of a circuit or as stand alone discrete devices. Features • • • • • SOT-563 Built in Biasing Resistors Epitaxial Planar Die Construction Lead Free By Design/ROHS Compliant (Note 1) "Green" Device (Note 2) Ideally Suited for Automated Assembly Processes Mechanical Data • • • • • • • • Case: SOT-563 Case Material: Molded Plastic. "Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.0035 grams (approximate) Reference Q1 Q2 Device Type PNP NPN R1 (NOM) 1KΩ ⎯ Maximum Ratings: Total Device Characteristic Power Dissipation Collector Current (using PNP as Pass Transistor) Thermal Resistance, Junction to Ambient Air Operating and Storage Junction Temperature Range Schematic and Pin Configuration R2 (NOM) 10KΩ ⎯ R3, R4 (NOM) ⎯ 10KΩ @TA = 25°C unless otherwise specified (Note 3) (Note 3) Symbol PD IC(max) RθJA TJ, TSTG Sub-Component Device - Pre-Biased PNP Transistor Characteristic Supply Voltage Input Voltage Output Current Notes: Symbol Vcc Vin Ic Value 150 100 833 -55 to +150 Unit mW mA °C/W °C @TA = 25°C unless otherwise specified Value -50 +5 to -10 -100 Unit V V mA 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; please see page 6 or as per Diodes Inc. suggested pad layout document AP02001 on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30761 Rev. 6 - 2 1 of 6 www.diodes.com DCX100NS © Diodes Incorporated Sub-Component Device - Pre-Biased NPN Transistor Characteristic Symbol Vcc Vin IO Supply Voltage Input Voltage Output Current Electrical Characteristics: Pre-Biased PNP Transistor Characteristic Input Voltage Output Voltage Input Current Output Current DC Current Gain Input Resistor Tolerance Resistance Ratio Tolerance Gain-Bandwidth Product Value 50 -10 to +40 50 Min -0.3 ⎯ ⎯ ⎯ ⎯ 33 -30 0.8 Typ ⎯ ⎯ 0.1 ⎯ ⎯ ⎯ ⎯ 1 Max ⎯ -3.0 -0.3 -7.2 -0.5 ⎯ +30 1.2 Unit V V V mA uA ⎯ % % fT ⎯ 250 ⎯ MHz Output Voltage Input Current Output Current DC Current Gain Input Resistor Tolerance Resistor Ratio Tolerance Min 0.5 ⎯ ⎯ ⎯ ⎯ 30 -30 0.8 Typ 1.18 1.85 0.1 ⎯ ⎯ ⎯ ⎯ 1 Max ⎯ 3 0.3 0.88 0.5 ⎯ +30 1.2 Unit V V V mA uA ⎯ % ⎯ Gain-Bandwidth Product fT ⎯ 250 ⎯ MHz Typical Characteristics Test Condition VCC = -5V, IO = -100uA VO = -0.3V, IO = -20mA IO/II = -10mA /-0.5mA VI = -5V VCC = -50V, VI = 0V VO = -5V, IO = -5mA ⎯ ⎯ VCE = -10V, IE = -5mA, f = 100 MHz @TA = 25°C unless otherwise specified Symbol VI(off) VI(on) VO(on) II IO(off) GI ΔR1 R2/R1 Input Voltage Unit V V mA @TA = 25°C unless otherwise specified Symbol VI(off) VI(on) VO(on) II IO(off) GI Δ R1 R2/R1 Electrical Characteristics: Pre-Biased NPN Transistor Characteristic @TA = 25°C unless otherwise specified Test Condition VCC = 5V, IO = 100uA VO = 0.3V, IO = 10mA IO/II = 10mA / 0.5mA VI = 5V VCC = 50V, VI = 0V VO = 5V, IO = 5mA ⎯ ⎯ VCE = 10V, IE = 5mA, f = 100 MHz @TA = 25°C unless otherwise specified PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve (Total Device) DS30761 Rev. 6 - 2 2 of 6 www.diodes.com DCX100NS © Diodes Incorporated Characteristics Curves of PNP Transistor (Q1) @TA = 25°C unless otherwise specified 300 0.2 TA = 150° C VCE = 5V 250 0.16 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) 0.18 0.14 0.12 0.1 0.08 0.06 0.04 TA = 125° C 200 T A = 85°C 150 100 50 0.02 0 0 0.1 0 100 1,000 1 10 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage 100 100 Ic/Ib=20 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) Ic/Ib=10 10 1 TA = 150° C T A = 125°C 0.1 TA = -55°C 10 1 T A =150°C TA =125°C TA = -55°C 0.1 TA = 25°C TA = 85°C TA = 25° C TA = 85° C 0.01 0.1 1,000 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 0.01 0.1 10 100 1,000 1 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Collector-Emitter Saturation Voltage vs. Collector Current 2 15 VCE = 0.3V 1.6 12 INPUT VOLTAGE (V) 1.8 1.4 1.2 9 1 0.8 6 0.6 0.4 3 T A = -55°C 0 0.1 1 100 10 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Input Voltage vs. Collector Current DS30761 Rev. 6 - 2 0.2 0 0.1 10 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Base-Emitter Turn-On Voltage vs. Collector Current 3 of 6 www.diodes.com DCX100NS © Diodes Incorporated 15 8 7 12 6 4 6 3 2 3 0 10 IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current 1 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Saturation Voltage vs. Collector Current Characteristics Curves of NPN Transistor (Q2) @TA = 25°C unless otherwise specified 300 0.1 0.09 IC, COLLECTOR CURRENT (A) 250 0.08 0.07 200 0.06 0.05 150 0.04 100 0.03 0.02 50 0.01 0 0 0 0.1 0.4 0.8 1.2 1.6 2 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 10 Typical Collector Current vs. Collector-Emitter Voltage VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) I c/I b=20 10 1 T A = 150°C TA = 125° C T A = 85°C VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 100 100 0.1 10 IC, COLLECTOR CURRENT (mA) Fig. 11 Typical DC Current Gain vs. Collector Current 10 1 0.1 TA = 25° C T A = -55 °C 0.01 0.1 1 10 100 1,000 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Fig. 13 Typical Collector-Emitter Saturation Voltage Fig. 12 Typical Collector-Emitter Saturation Voltage vs. Collector Current vs. Collector Current DS30761 Rev. 6 - 2 4 of 6 DCX100NS © Diodes Incorporated www.diodes.com 0.01 0.1 VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 25 INPUT VOLTAGE (V) 20 15 10 5 0 0.1 20 15 TA = 150° C TA = 125° C 10 TA = 85° C 5 TA = -55° C T A = 25°C 0 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 15 Typical Base-Emitter Turn-On Voltage vs. Collector Current 30 Ic/Ib=10 24 30 Ic/Ib = 20 24 18 18 TA = -55°C 12 12 TA = 25° C TA = 85° C 6 T A = 125 °C 0 0.1 VCE = 5V VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 14 Typical Input voltage vs. Output Current 25 TA = 150° C 100 1 10 IC, COLLECTOR CURRENT (mA) Fig. 16 Typical Base-Emitter Saturation Voltage vs. Collector Current TA = -55°C 6 TA = 150° C T A = 25°C 0 0.1 TA = 125° C TA = 85°C 100 1 10 IC, COLLECTOR CURRENT (mA) Fig. 17 Typical Base-Emitter Saturation Voltage vs. Collector Current Ordering Information (Note 4) Packaging SOT-563 Device DCX100NS-7 Notes: Shipping 3000/Tape & Reel 4. For packaging details, please see page 6 or go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information C01 YM Date Code Key Year Code 2005 S 2006 T C01 = Product Type Marking Code YM = Date Code Marking Y = Year e.g., T = 2006 M = Month e.g., 9 = September 2007 U 2008 V 2009 W 2010 X 2011 Y 2012 Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30761 Rev. 6 - 2 5 of 6 www.diodes.com DCX100NS © Diodes Incorporated Package Outline Dimensions A B SOT-563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm C D G M K H L Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 X DS30761 Rev. 6 - 2 6 of 6 www.diodes.com DCX100NS © Diodes Incorporated IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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