CTA2N1P COMPLEX TRANSISTOR ARRAY Features NEW PRODUCT • • • • • A Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) A03 H Mechanical Data • • • • • • • • • B C K Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: A03, See Page 6 Ordering Information: See Page 6 Weight: 0.006 grams (approximate) M J D CQ1 GQ2 L SQ2 Q1 Q2 EQ1 Maximum Ratings, Total Device F SOT-363 Min Max 0.10 0.30 1.15 1.35 2.00 2.20 0.65 Nominal 0.30 0.40 1.80 2.20 0.10 ⎯ 0.90 1.00 0.25 0.40 0.10 0.25 8° 0° α All Dimensions in mm Dim A B C D F H J K L M BQ1 DQ2 @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Symbol Value Unit Pd 150 mW RθJA 833 °C/W Tj, TSTG -55 to +150 °C Operating and Storage Temperature Range Maximum Ratings, Q1, MMBT4401 NPN Transistor Element Characteristic @TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V VEBO 6.0 V IC 600 mA Emitter-Base Voltage Collector Current - Continuous Maximum Ratings, Q2, BSS84 P-Channel MOSFET Element Characteristic @TA = 25°C unless otherwise specified Symbol Value Unit Drain-Source Voltage VDSS -50 V Drain-Gate Voltage RGS ≤ 1.0MΩ VDGR -50 V Gate-Source Voltage Continuous VGSS ±20 V Drain Current Continuous ID -130 mA Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30295 Rev. 7 - 2 1 of 6 www.diodes.com CTA2N1P © Diodes Incorporated Electrical Characteristics, Q1, MMBT4401 NPN Transistor Element Characteristic OFF CHARACTERISTICS (Note 5) Symbol Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO 60 ⎯ V IC = 100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 ⎯ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ⎯ V IE = 100μA, IC = 0 ICEX ⎯ 100 nA VCE = 35V, VEB(OFF) = 0.4V IBL ⎯ 100 nA VCE = 35V, VEB(OFF) = 0.4V hFE 20 40 80 100 40 ⎯ ⎯ ⎯ 300 ⎯ ⎯ IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 150mA, VCE = 1.0V IC = 500mA, VCE = 2.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.40 0.75 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage VBE(SAT) 0.75 ⎯ 0.95 1.2 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Output Capacitance Ccb ⎯ 6.5 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Ceb ⎯ 30 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 15 kΩ Voltage Feedback Ratio hre 0.1 8.0 x 10 Small Signal Current Gain hfe 40 500 ⎯ Output Admittance hoe 1.0 30 μS fT 250 ⎯ MHz Delay Time td ⎯ 15 ns Rise Time tr ⎯ 20 ns Storage Time ts ⎯ 225 ns Fall Time tf ⎯ 30 ns Collector Cutoff Current NEW PRODUCT @TA = 25°C unless otherwise specified Base Cutoff Current Test Condition ON CHARACTERISTICS (Note 5) DC Current Gain SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product -4 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 20mA, f = 100MHz SWITCHING CHARACTERISTICS Electrical Characteristics, Q2, BSS84 P-Channel MOSFET Element Characteristic OFF CHARACTERISTICS (Note 5) VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS -50 ⎯ ⎯ V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -15 -60 -100 µA µA nA VDS = -50V, VGS = 0V, TJ = 25°C VDS = -50V, VGS = 0V, TJ = 125°C VDS = -25V, VGS = 0V, TJ = 25°C Gate-Body Leakage IGSS ⎯ ⎯ ±10 nA VGS = ±20V, VDS = 0V VGS(th) -0.8 ⎯ -2.0 V VDS = VGS, ID = -1mA RDS (ON) ⎯ ⎯ 10 Ω VGS = -5V, ID = 0.100A gFS .05 ⎯ ⎯ S VDS = -25V, ID = 0.1A Input Capacitance Ciss ⎯ ⎯ 45 pF Output Capacitance Coss ⎯ ⎯ 25 pF Reverse Transfer Capacitance Crss ⎯ ⎯ 12 pF Turn-On Delay Time tD(ON) ⎯ 10 ⎯ ns Turn-Off Delay Time tD(OFF) ⎯ 18 ⎯ ns ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS VDS = -25V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS VDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10V Notes: 5. Short duration pulse test used to minimize self-heating effect. DS30295 Rev. 7 - 2 2 of 6 www.diodes.com CTA2N1P © Diodes Incorporated MMBT4401 Section hFE, DC CURRENT GAIN PD, POWER DISSIPATION (mW) 1,000 150 100 TA = 125°C 100 TA = +25°C TA = -25°C 10 50 VCE = 1.0V 0 1 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs. Ambient Temperature (Total Device) 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current 0.1 200 30 VCE, COLLECTOR-EMITTER VOLTAGE (V) 2.0 20 Cibo CAPACITANCE (pF) NEW PRODUCT 200 10 5.0 Cobo 1.0 0.1 DS30295 Rev. 7 - 2 1.0 10 REVERSE VOLTAGE (V) Fig. 3 Typical Capacitance 1.8 IC = 30mA IC = 1mA IC = 10mA 1.6 IC = 100mA 1.4 IC = 300mA 1.2 1.0 0.8 0.6 0.4 0.2 0 50 0.001 0.1 1 10 IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region 3 of 6 www.diodes.com 0.01 100 CTA2N1P © Diodes Incorporated MMBT4401 Section 1.0 VBE(ON), BASE EMITTER VOLTAGE (V) VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) IC = 10 IB 0.4 TA = 25°C 0.3 TA = 150°C 0.2 0.1 TA = -50°C VCE = 5V 0.9 TA = -50°C 0.8 0.7 TA = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 0.2 0 1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Base Emitter Voltage vs. Collector Current 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage vs. Collector Current 1,000 fT, GAIN BANDWIDTH PRODUCT (MHz) NEW PRODUCT 0.5 100 10 1 100 10 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current 1 DS30295 Rev. 7 - 2 4 of 6 www.diodes.com CTA2N1P © Diodes Incorporated BSS84 Section -1.0 500 -0.8 ID, DRAIN CURRENT (A) ID, DRAIN-TO-SOURCE CURRENT (mA) 400 300 200 -0.6 -0.4 -0.2 100 -0.0 0 4 1 2 3 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Fig. 8 Drain-Source Current vs. Drain-Source Voltage 0 0 5 -1 -2 -3 -4 -5 -6 -7 -8 VGS, GATE-TO-SOURCE VOLTAGE (V) Fig. 9 Drain Current vs. Gate Source Voltage 10 15 VGS = -10V ID = -0.13A 9 8 RDS(ON), ON-RESISTANCE (Ω) NEW PRODUCT 600 7 6 5 4 3 2 12 9 6 3 TA = 125° C 1 TA = 25° C 0 0 1 2 3 0 -50 5 4 VGS, GATE-TO-SOURCE VOLTAGE (V) Fig. 10 On-Resistance vs. Gate-Source Voltage 75 100 125 150 -25 25 0 50 TJ, JUNCTION TEMPERATURE (°C) Fig. 11 On-Resistance vs. Junction Temperature 25.0 20.0 VGS = -3.5V VGS = -3V VGS = -4.5V 15.0 VGS = -5V VGS = -4V 10.0 5.0 VGS = -6V VGS = -8V VGS = -10V 0.0 -0.0 DS30295 Rev. 7 - 2 -0.2 -0.4 -0.6 -0.8 ID, DRAIN CURRENT (A) Fig. 12, On-Resistance vs. Drain Current 1.0 5 of 6 www.diodes.com CTA2N1P © Diodes Incorporated Ordering Information (Note 6) Packaging SOT-363 Device CTA2N1P-7-F 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information A03 YM NEW PRODUCT Notes: Shipping 3000/Tape & Reel A03 = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Date Code Key Year Code 2001 M 2002 N 2003 P 2004 R 2005 S 2006 T 2007 U 2008 V 2009 W 2010 X 2011 Y 2012 Z Month Code Jan 1 Feb 2 Mar 3 Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30295 Rev. 7 - 2 6 of 6 www.diodes.com CTA2N1P © Diodes Incorporated