CTA2P1N COMPLEX TRANSISTOR ARRAY Features NEW P PROD R ODUCT UC T • • • • • Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P Lead Free/RoHS Compliant (Note 1) "Green" Device (Note 3 and 4) A B C Mechanical Data • • • • • • • • • H Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: A80, See Page 5 Ordering Information: See Page 5 Weight: 0.006 grams (approximate) Maximum Ratings, Total Device K M J D CQ1 G Q2 SQ2 EQ1 BQ1 DQ2 F L SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 0.10 ⎯ K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 0° 8° α All Dimensions in mm Q1 Q2 @TA = 25°C unless otherwise specified Symbol Value Power Dissipation Characteristic (Note 2) Pd 150 mW Thermal Resistance, Junction to Ambient (Note 2) RθJA 833 °C/W Tj, TSTG -55 to +150 °C Operating and Storage Temperature Range Maximum Ratings, Q1, MMBT4403 PNP Transistor Element Characteristic Unit @TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V IC -600 mA Collector Current - Continuous Maximum Ratings, Q2, 2N7002 N-Channel MOSFET Element @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage RGS ≤ 1.0MΩ Gate-Source Voltage Drain Current Notes: Continuous Pulsed (Note 2) Continuous Continuous @ 100°C Pulsed Symbol Value Units VDSS 60 V 60 V VDGR VGSS ID ±20 ±40 115 73 800 V mA 1. No purposefully added lead. 2. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30296 Rev. 9 - 2 1 of 5 www.diodes.com CTA2P1N © Diodes Incorporated Electrical Characteristics, Q1, MMBT4403 PNP Transistor Element NEW PRODUCT @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Symbol Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO -40 ⎯ V IC = -100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -40 ⎯ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ⎯ V IE = -100μA, IC = 0 ICEX ⎯ -100 nA VCE = -35V, VEB(OFF) = -0.4V IBL ⎯ -100 nA VCE = -35V, VEB(OFF) = -0.4V hFE 30 60 100 100 20 ⎯ ⎯ ⎯ 300 ⎯ ⎯ IC = -100µA, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -150mA, VCE = -2.0V IC = -500mA, VCE = -2.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.40 -0.75 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Base-Emitter Saturation Voltage VBE(SAT) -0.75 ⎯ -0.95 -1.30 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Output Capacitance Ccb ⎯ 8.5 pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance Ceb ⎯ 30 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.5 15 kΩ Voltage Feedback Ratio hre 0.1 8.0 x 10 Small Signal Current Gain hfe 60 500 ⎯ Output Admittance hoe 1.0 100 μS fT 200 ⎯ MHz Collector Cutoff Current Base Cutoff Current Test Condition ON CHARACTERISTICS (Note 5) DC Current Gain SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product -4 VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -20mA, f = 100MHz SWITCHING CHARACTERISTICS td ⎯ 15 ns Rise Time tr ⎯ 20 ns Storage Time ts ⎯ 225 ns Fall Time tf ⎯ 30 ns Delay Time VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA Electrical Characteristics, Q2, 2N7002 N-Channel MOSFET Element @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit BVDSS 60 70 V VGS = 0V, ID = 10μA IDSS ⎯ ⎯ µA VDS = 60V, VGS = 0V IGSS ⎯ ⎯ ⎯ 1.0 500 ±10 nA VGS = ±20V, VDS = 0V VGS(th) 1.0 ⎯ 2.0 V RDS (ON) ⎯ 3.2 4.4 7.5 13.5 Ω On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS ID(ON) gFS 0.5 80 1.0 ⎯ ⎯ ⎯ A mS VDS = VGS, ID =-250μA VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A Ciss Coss Crss ⎯ ⎯ ⎯ 22 11 2.0 50 25 5.0 pF pF pF Turn-On Delay Time tD(ON) ⎯ 7.0 20 ns Turn-Off Delay Time tD(OFF) ⎯ 11 20 ns Zero Gate Voltage Drain Current @ TC = 25°C @ TC = 125°C Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Notes: @ Tj = 25°C @ Tj = 125°C Test Condition VDS = 25V, VGS = 0V f = 1.0MHz VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω 5. Short duration pulse test used to minimize self-heating effect. DS30296 Rev. 9 - 2 2 of 5 www.diodes.com CTA2P1N © Diodes Incorporated MMBT4403 Section 1.6 VCE, COLLECTOR-EMITTER VOLTAGE (V) 30 CAPACITANCE (pF) 10 5 1 -0.1 -1.0 -10 REVERSE VOLTAGE (V) Fig. 1 Typical Capacitance VBE(ON), BASE EMITTER VOLTAGE (V) VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) IC = 10mA IC = 1mA IC = 100mA I = 300mA C IC = 30mA 1.0 0.8 0.6 0.4 0.2 1 0.01 0.1 10 100 IB, BASE CURRENT (mA) Fig. 2 Typical Collector Saturation Region 1.0 0.4 TA = 25°C 0.3 TA = 150°C 0.2 0.1 TA = 50°C 1 VCE = 5V 0.9 0.8 TA = -50°C 0.7 T A = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 0.2 0.1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Collector Emitter Saturation Voltage vs. Collector Current 1,000 1 10 IC, COLLECTOR CURRENT (mA) Fig. 4 Base-Emitter Voltage vs. Collector Current 100 1,000 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V TA = 150°C TA = 25°C 100 100 TA = -50°C 10 1 1 1.2 0 0.001 IC IB = 10 0 1.4 -30 0.5 hFE, DC CURRENT GAIN NEW PRODUCT 20 10 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 5 DC Current Gain vs. Collector Current DS30296 Rev. 9 - 2 3 of 5 www.diodes.com 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Gain Bandwidth Product vs. Collector Current CTA2P1N © Diodes Incorporated MMBT4403 Section (Continued) PD, POWER DISSIPATION (mW) 150 100 50 0 0 200 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Max Power Dissipation vs. Ambient Temperature (Total Device) 2N7002 Section 1.0 ID, DRAIN-SOURCE CURRENT (A) NEW PRODUCT 200 7 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V 0.8 0.6 Tj = 25°C 6 5 VGS = 5.0V 5.5V 4 5.0V 3 0.4 VGS = 10V 2 0.2 1 0 0 0 5 2 4 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 On-Region Characteristics (2N7002) 1 3.0 0.4 0.6 0.8 1.0 ID, DRAIN CURRENT (A) Fig. 9 On-Resistance vs. Drain Current (2N7002) 0 0.2 6 5 2.5 4 2.0 ID = 500mA ID = 50mA 3 2 1.5 1 VGS = 10V, ID = 200mA 1.0 -55 0 -30 -5 20 45 70 95 120 145 Tj, JUNCTION TEMPERATURE (°C) Fig. 10 On-Resistance vs. Junction Temperature (2N7002) DS30296 Rev. 9 - 2 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 11 On-Resistance vs. Gate-Source Voltage (2N7002) 4 of 5 www.diodes.com 0 CTA2P1N © Diodes Incorporated 2N7002 Section (Continued) 10 NEW PRODUCT VGS, GATE SOURCE VOLTAGE (V) 9 8 7 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1 ID, DRAIN CURRENT (A) Fig. 12 Typical Transfer Characteristics (2N7002) Ordering Information Notes: 6. (Note 6) Device Packaging Shipping CTA2P1N-7-F SOT-363 3000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. A80 Date Code Key Year Code Month Code 2004 R Jan 1 2005 S Feb 2 YM Marking Information 2006 T Mar 3 Apr 4 A80 = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September 2007 U May 5 2008 V Jun 6 2009 W Jul 7 Aug 8 2010 X Sep 9 2011 Y Oct O 2012 Z Nov N Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30296 Rev. 9 - 2 5 of 5 www.diodes.com CTA2P1N © Diodes Incorporated