DDTA144ELP PRE-BIASED (R1=R2) SMALL SIGNAL SURFACE MOUNT 100mA PNP TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability 1 C • • • • • • Bottom View Case: DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: Collector Dot (See Diagram and Marking Information) Terminals: Finish — NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Code P2, Dot denotes Collector Side Ordering Information: See Page 4 Weight: 0.0009 grams (approximate) R2 Top View DFN1006-3 OUT B IN 1 R1 R2 C 3 (or -supply) E 2 Component P/N R1(NOM) R2(NOM) DDTA144ELP 47K 47K IN B 1 C OUT 3 (or -supply) E + Supply or GND GND (or +supply) Equivalent Inverter Circuit Schematic and Pin Configuration Maximum Ratings R1 1B Mechanical Data • • 2E 3 2 3 2 NEW PRODUCT Please click here to visit our online spice models database. @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit VCC -50 V Supply Voltage Input Voltage VIN +10 to -40 V IC(max) -100 mA Power Dissipation (Note 3) PD 250 mW Power Deration above 25°C Pder 2 mW/°C Symbol Value Unit RθJA 500 °C/W Tj, TSTG -55 to +150 °C Output Current (Io) Thermal Characteristics Characteristic Thermal Resistance, Junction to Ambient Air (Note 3) (Equivalent to one heated junction of PNP) Operating and Storage Temperature Range Notes: 1. 2. 3. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB, 1” x 0.85” x 0.062”; pad layout as shown on page 5 or Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30844 Rev. 5 - 2 1 of 5 www.diodes.com DDTA144ELP © Diodes Incorporated NEW PRODUCT Electrical Characteristics Characteristic @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -50 ⎯ ⎯ V IC = -10μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -50 ⎯ ⎯ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage* V(BR)EBO -4.5 ⎯ ⎯ V IE = -50μA, IC = 0 ICEX ⎯ ⎯ -0.5 μA VCE = -50V, VEB(OFF) = 3.0V IBL ⎯ ⎯ -0.5 μA VCE = -50V, VEB(OFF) = 3.0V Collector-Base Cut Off Current ICBO ⎯ ⎯ -0.5 μA VCB = -50V, IE = 0 Collector-Emitter Cut Off Current, IO(OFF) ICEO ⎯ ⎯ -0.5 μA VCE = -50V, IB = 0 IEBO ⎯ ⎯ -0.5 mA VEB = 4V, IC = 0 VI(OFF) ⎯ ⎯ -0.3 V VCC = -5V, IO = -100uA ⎯ ⎯ -0.69 V VCE = -5V, IC = -2mA ⎯ ⎯ -0.78 V VCE = -5V, IC = -10mA ⎯ ⎯ -0.88 V IC = -10mA, IB = -1mA, VCE = -5V ⎯ ⎯ -0.98 V IC = -50mA, IB = -5mA, VCE = -5V VI(ON) -3 ⎯ ⎯ V VO = -0.3V, IO = -20mA II ⎯ ⎯ -7.2 mA VI = -5V Off Characteristics (Note 4) Collector Cutoff Current* Base Cutoff Current (IBEX) Emitter-Base Cut Off Current Input Off Voltage On Characteristics (Note 4) Base-Emitter Turn-On Voltage* Base-Emitter Saturation Voltage* Input-On Voltage Input Current DC Current Gain VBE(ON) VBE(SAT) hFE 90 ⎯ ⎯ ⎯ VCE =-5V, IC = -2mA 120 ⎯ ⎯ ⎯ VCE = -5V, IC = -5mA 150 ⎯ ⎯ ⎯ VCE = -5V, IC = -10mA 100 ⎯ ⎯ ⎯ VCE = -5V, IC = -100mA 180 ⎯ ⎯ ⎯ VCE = -5V, IC = -200mA 250 ⎯ ⎯ ⎯ VCE = -5V, IC = -300mA ⎯ ⎯ -0.15 V IB = -1mA, IC = -10mA ⎯ ⎯ -0.85 V IB = -5mA, IC = -50mA VO(ON) ⎯ ⎯ -0.3 V II = -0.5mA, IO = -50mA Input Resistance R1 32.9 47 61.1 KΩ ⎯ Resistance Ratio (R2/R1) 0.8 1.0 1.2 ⎯ ⎯ fT ⎯ 250 ⎯ MHz Collector-Emitter Saturation Voltage* Output On Voltage (Same as VCE(SAT)) VCE(SAT) Small Signal Characteristics Current Gain-Bandwidth Product VCE = -10V, IE = -5mA, f = 100 MHz * Guaranteed by design. Notes: 4. Short duration pulse test used to minimize self-heating effect. Pulse Test: Pulse width tp<300 uS, Duty Cycle, d<=2%. DS30844 Rev. 3 - 2 2 of 5 www.diodes.com DDTA144ELP © Diodes Incorporated 0.1 IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (mW) IB = 0.4mA Note 3 250 200 150 100 0.08 IB = 0.35mA 0.07 IB = 0.3mA IB = 0.25mA 0.06 0.05 IB = 0.2mA 0.04 IB = 0.15mA 0.03 0.02 IB = 0.1mA RθJA = 500 °C/W 50 IB = 0.5mA IB = 0.45mA 0.09 0.01 0 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve IB = 0.05mA 2 4 6 8 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 2 Typical Collector Emitter Voltage vs. Collector Current 175 0 4 VCE = -5V VO = 0.3V IO = 5mA 3.7 TA = 150 °C hFE, DC CURRENT GAIN VI(ON), INPUT VOLTAGE (V) 3.4 3.1 2.8 2.5 2.2 1.9 1.6 TA = 85 °C TA = 25 °C T A = -55 °C 1.3 1 -60 0.1 10 100 1,000 1 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical DC Current Gain vs. Collector Current -30 0 30 60 90 120 150 TA, AMBIENT TEMPERATURE (°C) Fig. 3 Typical Input Voltage vs. Ambient Temperature 10 15 IC/IB = 10 12 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 13.5 VBE, BASE EMITTER VOLTAGE (V) NEW PRODUCT 300 TA = -55 °C 10.5 9 T A = 25 °C 7.5 6 4.5 3 1 TA = 85 °C 0.1 TA = 150 °C T A = 85 °C TA = -55 °C T A = 25 °C 1.5 0 0.1 TA = 150 °C 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector Emitter Saturation Voltage vs. Collector Current 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base Emitter Voltage vs. Collector Current DS30844 Rev. 3 - 2 3 of 5 www.diodes.com DDTA144ELP © Diodes Incorporated IC/IB = 10 27 TA = -55 °C 24 VBE(SAT), BASE EMITTER SATURATION VOLTAGE (V) NEW PRODUCT 30 T A = 25 °C 21 18 TA = 85 °C 15 12 TA = 150 °C 9 6 3 0 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Base Emitter Saturation Voltage vs. Collector Current Ordering Information (Note 6) Notes: Device Packaging Shipping DDTA144ELP-7 DFN1006-3 3000/Tape & Reel 6. For packaging details, please see page 5 or go to our website at http://www.diodes.com/ap2007.pdf. Marking Information P2 = Product Type Marking Code Dot Denotes Collector, Pin 3 Mechanical Details DFN1006-3 Dim Min Max Typ A 0.95 1.075 1.00 B 0.55 0.675 0.60 C 0.45 0.55 0.50 D 0.20 0.30 0.25 G 0.47 0.53 0.50 H 0 0.05 0.03 K 0.10 0.20 0.15 L 0.20 0.30 0.25 M 0.35 ⎯ ⎯ N 0.40 ⎯ ⎯ All Dimensions in mm G H A K B C M D DS30844 Rev. 3 - 2 N L 4 of 5 www.diodes.com DDTA144ELP © Diodes Incorporated NEW PRODUCT Suggested Pad Layout C X1 X Dimensions Z G1 G2 X X1 Y C G2 Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 G1 Y Z IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30844 Rev. 3 - 2 5 of 5 www.diodes.com DDTA144ELP © Diodes Incorporated