BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. 250 mAMPS 200 VOLTS RDS(on) = 8 W Features • Low Drive Requirement, VGS = 3.0 V max • Inherent Current Sharing Capability Permits Easy Paralleling of N−Channel D many Devices • Pb−Free Packages are Available* G MAXIMUM RATINGS Rating S Symbol Value Unit Drain −Source Voltage VDSS 200 Vdc Gate−Source Voltage VGS ±20 Vdc Drain Current Continuous (Note 1) Pulsed (Note 2) ID 250 500 Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Temperature Range MARKING DIAGRAM mAdc IDM PD TJ, Tstg 350 6.4 mW mW/°C −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. TO−92 CASE 29−11 STYLE 30 1 2 BS108 AYWW G G 3 BS108 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device BS108 BS108G BS108ZL1 BS108ZL1G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 2 1 Package Shipping TO−92 1000 Units/Box TO−92 (Pb−Free) 1000 Units/Box TO−92 2000/Ammo Pack TO−92 (Pb−Free) 2000/Ammo Pack Preferred devices are recommended choices for future use and best overall value. Publication Order Number: BS108/D BS108 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit − − − Vdc 200 − − 30 − − 10 0.5 − 1.5 − − − − 10 8.0 − − 25 − 0.33 − − − 150 − − 30 − − 10 OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0, ID = 10 mA) V(BR)DS Zero Gate Voltage Drain Current (VDSS = 130 Vdc, VGS = 0) IDSS Gate−Body Leakage Current (VGS = 15 Vdc, VDS = 0) IGSSF nAdc nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (ID = 1.0 mA, VDS = VGS) VGS(th) Static Drain−to−Source On−Resistance (VGS = 2.0 Vdc, ID = 50 mA) (VGS = 2.8 Vdc, ID = 100 mA) rDS(on) Drain Cutoff Current (VGS = 0.2 V, VDS = 70 V) IDSX Forward Transconductance (ID = 120 mA, VDS = 20 V) gFS Vdc W mA Mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Ciss pF Output Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Coss Reverse Transfer Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Crss pF pF SWITCHING CHARACTERISTICS Turn−On Time (See Figure 1) td(on) − − 15 ns Turn−Off Time (See Figure 1) td(off) − − 15 ns 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%. RESISTIVE SWITCHING +25 V TO SAMPLING SCOPE 50 W INPUT Vout 23 PULSE GENERATOR 20 dB 50 W ATTENUATOR Vin 40 pF toff 90% 90% OUTPUT V INVERTED out 50 50 ton 1.0 M 10% 90% 10 V INPUT Vin 50% 10% PULSE WIDTH 50% Figure 2. Switching Waveforms Figure 1. Switching Test Circuit http://onsemi.com 2 BS108 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE DIM A B C D G H J K L N P R V K D X X G J H V C SECTION X−X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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