MMBF2202PT1 Preferred Device Power MOSFET 300 mAmps, 20 Volts P−Channel SC−70/SOT−323 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are d c −d c c o n v e r t e r s , p o w e r m a n a g e m e n t i n p o r t a b l e a n d battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. http://onsemi.com 300 mAMPS, 20 VOLTS RDS(on) = 2.2 W P−Channel 3 Features • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SC−70/SOT−323 Surface Mount Package Saves Board Space • Pb−Free Package is Available 1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 20 Vdc Gate−to−Source Voltage − Continuous VGS ± 20 Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 70°C − Pulsed Drain Current (tp ≤ 10 ms) Total Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C Vdc MARKING DIAGRAM AND PIN ASSIGNMENT mAdc ID ID IDM 3 300 240 750 PD 150 1.2 mW mW/°C TJ, Tstg − 55 to 150 °C Thermal Resistance, Junction−to−Ambient RqJA 833 °C/W Maximum Lead Temperature for Soldering Purposes, for 10 seconds TL 260 °C Operating and Storage Temperature Range 2 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Mounted on G10/FR4 glass epoxy board using minimum recommended footprint. Drain 3 1 2 P3 M G G SC−70/SOT−323 CASE 419 STYLE 8 Gate 1 2 Source P3 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † MMBF2202PT1 SC−70/ SOT−323 3000 Tape & Reel MMBF2202PT1G SC−70/ SOT−323 (Pb−Free) 3000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 5 1 Publication Order Number: MMBF2202PT1/D MMBF2202PT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 20 − − Vdc − − − − 1.0 10 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 mA) mAdc Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS − − ±100 nAdc Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) VGS(th) 1.0 1.7 2.4 Vdc Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 200 mAdc) (VGS = 4.5 Vdc, ID = 50 mAdc) rDS(on) − − 1.5 2.0 2.2 3.5 gFS − 600 − mMhos (VDS = 5.0 V) Ciss − 50 − pF Output Capacitance (VDS = 5.0 V) Coss − 45 − Transfer Capacitance (VDG = 5.0 V) Crss − 20 − td(on) − 2.5 − tr − 1.0 − td(off) − 16 − ON CHARACTERISTICS (Note 2) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) W DYNAMIC CHARACTERISTICS Input Capacitance SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time (VDD = −15 Vdc, RL = 75 W, ID = 200 mAdc, VGEN = −10 V, RG = 6.0 W) Rise Time Turn−Off Delay Time Fall Time ns tf − 8.0 − QT − 2700 − pC IS − − 0.3 A Pulsed Current ISM − − 0.75 Forward Voltage (Note 3) VSD − 1.5 − Gate Charge (See Figure 5) (VDS = 16 V, VGS = 10 V, ID = 200 mA) SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Current V 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperature. TYPICAL CHARACTERISTICS 4.0 8 rDS(on) , ON RESISTANCE (OHMS) rDS(on) , ON RESISTANCE (OHMS) 10 ID = 200 mA 6 4 2 0 0 1 2 3 4 5 6 7 8 9 3.5 3.0 2.5 2.0 VGS = 10 V ID = 200 mA 1.5 1.0 0.5 0 10 VGS = 4.5 V ID = 50 mA −40 −20 0 20 40 60 80 100 120 140 160 VGS, GATE−SOURCE VOLTAGE (VOLTS) TEMPERATURE (°C) Figure 1. On Resistance versus Gate−Source Voltage Figure 2. On Resistance versus Temperature http://onsemi.com 2 MMBF2202PT1 TYPICAL CHARACTERISTICS 1.0 0.9 5 4 I D, DRAIN CURRENT (AMPS) RDS(on) , ON RESISTANCE (OHMS) 6 VGS = 4.5 V 3 VGS = 10 V 2 1 0.7 −55 0.6 0.5 150 25 0.4 0.3 0.2 0.1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.8 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Figure 3. On Resistance versus Drain Current Figure 4. Transfer Characteristics ID(on), DRAIN CURRENT (AMPS) 0.8 25° 150° 0.01 0.5 1.0 1.5 2.0 0.6 0.3 VGS = 3 V 0.1 1 0 2 3 4 5 6 7 8 Figure 6. On Region Characteristics 50 45 VGS = 0 V f = 1 MHz 40 35 30 25 20 Ciss 15 Coss 10 5 Crss 2 4 6 8 10 12 14 16 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation http://onsemi.com 3 10 VGS = 3.5 V 0.2 Figure 5. Source−Drain Forward Voltage 0 9 VGS = 4 V 0.4 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) 0 6.0 VGS = 4.5 V 0.5 0 2.5 5.5 VGS = 5 V 0.7 VSD, SOURCE−DRAIN FORWARD VOLTAGE (VOLTS) C, CAPACITANCE (pF) 0 4.5 5.0 VGS, GATE−SOURCE VOLTAGE (VOLTS) 0.1 0.001 0 ID, DRAIN CURRENT (AMPS) 1 IS , SOURCE CURRENT (AMPS) 0.8 18 20 MMBF2202PT1 PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D e1 3 DIM A A1 A2 b c D E e e1 L HE E HE 1 2 b e A 0.05 (0.002) c A2 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN L A1 MIN 0.80 0.00 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 4 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MMBF2202PT1/D