NSR15ADXV6T1, NSR15ADXV6T5 Dual RF Schottky Diode These diodes are designed for analog and digital applications, including DC based signal detection and mixing applications. http://onsemi.com Features • • • • Low Capacitance (<1.0 pF) Low VF (390 mV Typical @ 1.0 mA) Low VF (1.0 mV Typical @ 1.0 mA) These are Pb−Free Devices RF SCHOTTKY BARRIER DIODES 15 VOLTS, 30 mA Benefits • Reduced Parasitic Losses • Accurate Signal Measurement 6 5 4 1 2 3 MAXIMUM RATINGS Rating Symbol Max Unit Peak Reverse Voltage VR 15 V Forward Current IF 30 mA TJ, Tstg −65 to +150 °C Operating and Storage Temperature Range ESD Rating: Class 1 per Human Body Model Class A per Machine Model Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM 6 1 5RD SOT−563 CASE 463A 5R = Specific Device Code D = Date Code ORDERING INFORMATION Package Shipping† NSR15ADXV6T1 SOT−563 4 mm pitch 4000 / Tape & Reel NSR15ADXV6T5 SOT−563 2 mm pitch 8000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2004 June, 2004 − Rev. 3 1 Publication Order Number: NSR15ADXV6T1/D NSR15ADXV6T1, NSR15ADXV6T5 ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Breakdown Voltage (IR = 10 A) VBR 15 20 − V Reverse Leakage (VR = 1.0 V) IR − 2 50 nA Forward Voltage (IF = 1.0 mA) VF1 − 390 415 mV Forward Voltage (IF = 10 mA) VF2 − 530 680 mV Delta VF VF − 1 15 mV CT − 0.8 1 pF Capacitance (VF = 0 V, f = 1.0 MHz) 100 k IR, REVERSE CURRENT (nA) IF, FORWARD CURRENT (mA) 100 10 25°C 75°C 1 125°C −25°C 0.1 0.01 10 k 125°C 1k 75°C 100 25°C 10 1 0 0.1 0.2 0.3 0.4 0.5 VF, FORWARD VOLTAGE (V) 0.6 0 0.7 5 10 VR, REVERSE VOLTAGE (V) Figure 1. Forward Current versus Forward Voltage at Temperatures Figure 2. Reverse Current versus Reverse Voltage 1000 RD, DYNAMIC RESISTANCE () CT, CAPACITANCE (pF) 1 0.9 0.8 0.7 0.6 0.5 15 100 10 1 0 1 2 3 4 5 6 VR, REVERSE VOLTAGE (V) 7 8 0.1 Figure 3. Total Capacitance versus Reverse Voltage 1 10 IF, FORWARD CURRENT (mA) 100 Figure 4. Dynamic Resistance versus Forward Current http://onsemi.com 2 100 IF (left scale) 10 10 VF (right scale) 1 0.3 0.4 0.5 0.6 0.7 VF, FORWARD VOLTAGE (V) 0.8 0.1 Figure 5. Typical VF Match at Mixer Bias Levels 1 VF (right scale) 1 0.1 0.175 0.275 0.225 VF, FORWARD VOLTAGE (V) 0.325 Figure 6. Typical VF Match at Detector Bias Levels 1 10 DC Bias = 3 A 1 0.1 0.1 VDET, (Vdc) VDET, (Vdc) IF (left scale) 10 1 0.1 10 100 VF, FORWARD VOLTAGE DIFFERENTIAL (mV) IF, FORWARD CURRENT (mA) 100 VF, FORWARD VOLTAGE DIFFERENCE (mV) IF, FORWARD CURRENT (A) NSR15ADXV6T1, NSR15ADXV6T5 VO RF IN 18 nH 0.01 0.001 VO RF IN 0.0001 100 pF 3.3 nH 0.01 68 100 k 100 pF 4.7 k 0.00001 0.001 −40 −35 −30 −25 −20 −15 −10 Pin, INPUT POWER (dBm) −5 0.000001 −20 −15 −10 0 Figure 7. Typical Output Voltage versus Input Power, Small Signal Detector Operating at 850 MHz 5 10 15 −5 0 Pin, INPUT POWER (dBm) CONVERSION LOSS (dB) 10 9 8 7 0 2 4 6 8 10 LOCAL OSCILLATOR POWER (dBm) 12 Figure 9. Typical Conversion Loss versus L.O. Drive, 2.0 GHz http://onsemi.com 3 25 30 Figure 8. Typical Output Voltage versus Input Power, Large Signal Detector Operating at 915 MHz 12 6 −2 20 NSR15ADXV6T1, NSR15ADXV6T5 PACKAGE DIMENSIONS SOT−563−6 CASE 463A−01 ISSUE C A −X− 6 5 1 2 C K 4 B −Y− 3 D G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. S J 5 PL 6 0.08 (0.003) DIM A B C D G J K S M X Y MILLIMETERS MIN MAX 1.50 1.70 1.10 1.30 0.50 0.60 0.17 0.27 0.50 BSC 0.08 0.18 0.10 0.30 1.50 1.70 INCHES MIN MAX 0.059 0.067 0.043 0.051 0.020 0.024 0.007 0.011 0.020 BSC 0.003 0.007 0.004 0.012 0.059 0.067 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches SOT−563 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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