NSR15SDW1T1 NSR15SDW1T2 Dual RF Schottky Diode These diodes are designed for analog and digital applications, including DC based signal detection and mixing applications. Features • • • • • http://onsemi.com Low Capacitance (<1 pF) Low VF (390 mV typical @ 1 mA) Low VFD (1 mV typical @ 1 mA) Pins 2 and 5 Shorted Pb−Free Packages are Available RF SCHOTTKY BARRIER DIODES 15 VOLTS, 30 mA Benefits • Reduced Parasitic Losses • Accurate Signal Measurement • Reduced Cross Talk 6 5 4 1 2 3 MAXIMUM RATINGS Rating Symbol Max Unit Peak Reverse Voltage VR 15 V Forward Current IF 30 mA TJ, Tstg −65 to +150 °C Operating and Storage Temperature Range SC−88 CASE 419B STYLE 21 1 MARKING DIAGRAM 6 ESD Rating: Class 1 per Human Body Model ESD Rating: Class A per Machine Model R6 M G G THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance Junction−to−Ambient 1 Symbol Value Unit RqJA 500 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. R6 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NSR15SDW1T1 NSR15SDW1T1G NSR15SDW1T2 NSR15SDW1T2G NSR15SDW1T4 NSR15SDW1T4G Package Shipping† SC−88 3000/Tape & Reel SC−88 (Pb−Free) 3000/Tape & Reel SC−88 3000/Tape & Reel SC−88 (Pb−Free) 3000/Tape & Reel SC−88 10,000/Tape & Reel SC−88 10,000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 May, 2006 − Rev. 3 1 Publication Order Number: NSR15SDW1T1/D NSR15SDW1T1 NSR15SDW1T2 ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit VBR 15 20 − V Reverse Leakage (VR = 1 V) IR − 2 50 nA Forward Voltage (IF = 1 mA) VF1 − 390 415 mV Forward Voltage (IF = 10 mA) VF2 − 530 680 mV Delta VF (IF = 1 mA, All Diodes) DVF − 1 15 mV CT − 0.8 1 pF Breakdown Voltage (IR = 10 mA) Capacitance (VF = 0 V, f = 1 MHz) 100 k IR, REVERSE CURRENT (nA) IF, FORWARD CURRENT (mA) 100 10 25°C 75°C 1 125°C −25°C 0.1 0.01 10 k 125°C 1k 75°C 100 25°C 10 1 0 0.1 0.2 0.3 0.4 0.5 VF, FORWARD VOLTAGE (V) 0.6 0 0.7 5 10 VR, REVERSE VOLTAGE (V) Figure 1. Forward Current versus Forward Voltage at Temperatures Figure 2. Reverse Current versus Reverse Voltage 1000 RD, DYNAMIC RESISTANCE (W) CT, CAPACITANCE (pF) 1 0.9 0.8 0.7 0.6 0.5 15 100 10 1 0 1 2 3 4 5 6 VR, REVERSE VOLTAGE (V) 7 0.1 8 Figure 3. Total Capacitance versus Reverse Voltage 1 10 IF, FORWARD CURRENT (mA) 100 Figure 4. Dynamic Resistance versus Forward Current http://onsemi.com 2 100 IF (left scale) 10 10 DVF (right scale) 1 0.3 0.4 0.5 0.6 0.7 VF, FORWARD VOLTAGE (V) 0.8 0.1 Figure 5. Typical VF Match at Mixer Bias Levels IF (left scale) 1 DVF (right scale) 1 0.1 0.175 0.275 0.225 VF, FORWARD VOLTAGE (V) 0.325 Figure 6. Typical VF Match at Detector Bias Levels 1 10 DC Bias = 3 mA 1 0.1 0.1 RF IN NSR15SDW1 VDET, (Vdc) VDET, (Vdc) 10 100 10 1 0.1 DVF, FORWARD VOLTAGE DIFFERENCE (mV) IF, FORWARD CURRENT (mA) IF, FORWARD CURRENT (mA) 100 DVF, FORWARD VOLTAGE DIFFERENTIAL (mV) NSR15SDW1T1 NSR15SDW1T2 VO 18 nH 0.01 0.001 RF IN 0.0001 100 pF 3.3 nH 0.01 68 W 100 kW NSR15SDW1 VO 100 pF 4.7 kW 0.00001 0.001 −40 −35 −30 −25 −20 −15 −10 Pin, INPUT POWER (dBm) −5 0.000001 −20 −15 −10 0 Figure 7. Typical Output Voltage versus Input Power, Small Signal Detector Operating at 850 MHz −5 0 5 10 15 Pin, INPUT POWER (dBm) CONVERSION LOSS (dB) 10 9 8 7 0 10 2 4 6 8 LOCAL OSCILLATOR POWER (dBm) 12 Figure 9. Typical Conversion Loss versus L.O. Drive, 2.0 GHz http://onsemi.com 3 25 30 Figure 8. Typical Output Voltage versus Input Power, Large Signal Detector Operating at 915 MHz 12 6 −2 20 NSR15SDW1T1 NSR15SDW1T2 PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. D e 6 5 4 1 2 3 HE DIM A A1 A3 b C D E e L HE −E− b 6 PL 0.2 (0.008) M E M A3 C A A1 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 STYLE 21: PIN 1. ANODE 1 2. N/C 3. ANODE 2 4. CATHODE 2 5. N/C 6. CATHODE 1 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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