NUP4302MR6 Schottky Diode Array for Four Data Line ESD Protection The NUP4302MR6 is designed to protect high speed data line interface from ESD, EFT and lighting. http://onsemi.com Features • • • • • • Very Low Forward Voltage Drop Fast Switching PN Junction Guard Ring for Transient and ESD Protection ESD Rating of Class 3B (Exceeding 16 kV) per Human Body Model and Class C (Exceeding 400 V) per Machine Model IEC 61000−4−2 Level 4 ESD Protection Flammability Rating: UL 94 V−0 PIN CONFIGURATION AND SCHEMATIC I/O 1 6 I/O GND 2 5 VCC 4 I/O 1/O 3 Applications • • • • Ultra High−Speed Switching USB 1.1 and 2.0 Power and Data Line Protection Digital Video Interface (DVI) Monitors and Flat Panel Displays MARKING DIAGRAM 67M 1 TSOP−6 CASE 318G PLASTIC STYLE 12 1 67 = Specific Device Code M = Date Code ORDERING INFORMATION Device NUP4302MR6T1 Package Shipping† TSOP−6 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2004 December, 2004 − Rev. 2 1 Publication Order Number: NUP4302MR6/D NUP4302MR6 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit VBR 30 V Forward Power Dissipation (TA = 25°C) PF 225 mW Forward Continuous Current IF 200 mA Junction Operating Temperature TJ −55 to +125 °C Storage Temperature Range Tstg −55 to +150 °C Peak Reverse Breakdown Voltage Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Reverse Breakdown Voltage VBR Conditions Min IR VR = 25 V Forward Voltage VF Forward Voltage VF Forward Voltage Max Unit 30 IR = 100 A Reverse Leakage Typ V 30 A IF = 0.1 mAdc 0.28 V IF = 1.0 mAdc 0.35 V VF IF = 10 mAdc 0.45 V Forward Voltage VF IF = 100 mAdc 1.00 V Total Capacitance CT VR = 0 V, f = 1.0 MHz, I/O to Ground VR = 0 V, f = 1.0 MHz, I/O to I/O 28 18 pF Reverse Recovery Time trr IF = IR = 10 mA, IR(REC) = 1.0 mA (Figure 1) 5.0 ns 820 +10 V 2k 100 H 0.1 F IF tr 0.1 F t IF trr 10% DUT 50 OUTPUT PULSE GENERATOR tp 50 INPUT SAMPLING OSCILLOSCOPE 90% VR IR INPUT SIGNAL iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 t NUP4302MR6 IR, REVERSE CURRENT (A) 10,000 TA = 1 25°C 85°C 100 25°C 10 1 0 0.2 0.4 0.6 0.8 TA = 1 25°C 1000 85°C 100 10 25°C 1 0.1 1.0 0 5 VF, FORWARD VOLTAGE (VOLTS) Figure 2. Forward Current as a Function of Forward Voltage; Typical Values 25 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Reverse Current as a Function of Reverse Voltage; Typical Values 40 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1000 f = 1 MHz TA = 25°C 35 30 25 20 15 10 5 0 0 5 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Diode Capacitance as a Function of Reverse Voltage; Typical Values http://onsemi.com 3 30 30 NUP4302MR6 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. A L 6 S 1 5 4 2 3 B MILLIMETERS DIM MIN MAX A 2.90 3.10 B 1.30 1.70 C 0.90 1.10 D 0.25 0.50 G 0.85 1.05 H 0.013 0.100 J 0.10 0.26 K 0.20 0.60 L 1.25 1.55 M 0_ 10 _ S 2.50 3.00 D G J C 0.05 (0.002) M K H INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0_ 10 _ 0.0985 0.1181 STYLE 12: PIN 1. I/O 2. GROUND 3. I/O 4. I/O 5. VCC 6. I/O SOLDERING FOOTPRINT 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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