BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors http://onsemi.com PNP Duals (3) These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. (2) Q1 (1) Q2 Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS (4) Compliant (5) (6) MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Symbol BC856 BC857 BC858 BC856 BC857 BC858 Emitter −Base Voltage Collector Current −Continuous VCEO VCBO Value Unit 1 V −65 −45 −30 SOT−363/SC−88 CASE 419B STYLE 1 V −80 −50 −30 MARKING DIAGRAM VEBO −5.0 V IC −100 mAdc Symbol Max Unit PD 380 250 mW 3.0 mW/°C RqJA 328 °C/W TJ, Tstg −55 to +150 °C 3x M G G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR−5 Board (Note 1) TA = 25°C Derate Above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in © Semiconductor Components Industries, LLC, 2009 October, 2009 − Rev. 7 1 3x = Specific Device Code x = B, F, G, or L (See Ordering Information) M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: BC856BDW1T1/D BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit −65 −45 −30 − − − − − − −80 −50 −30 − − − − − − −80 −50 −30 − − − − − − −5.0 −5.0 −5.0 − − − − − − − − − − −15 −4.0 − − 150 270 − − 220 420 290 520 475 800 − − − − −0.3 −0.65 − − −0.7 −0.9 − − −0.6 − − − −0.75 −0.82 fT 100 − − MHz Output Capacitance (VCB = −10 V, f = 1.0 MHz) Cob − − 4.5 pF Noise Figure (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mA) Collector −Emitter Breakdown Voltage (IC = −10 mA, VEB = 0) Collector −Base Breakdown Voltage (IC = −10 mA) Emitter −Base Breakdown Voltage (IE = −1.0 mA) V(BR)CEO BC856 Series BC857 Series BC858 Series V(BR)CES BC856 Series BC857B Only BC858 Series V(BR)CBO BC856 Series BC857 Series BC858 Series V(BR)EBO BC856 Series BC857 Series BC858 Series Collector Cutoff Current (VCB = −30 V) Collector Cutoff Current (VCB = −30 V, TA = 150°C) ICBO V V V V nA mA ON CHARACTERISTICS DC Current Gain (IC = −10 mA, VCE = −5.0 V) (IC = −2.0 mA, VCE = −5.0 V) hFE BC856B, BC857B BC857C, BC858C BC856B, BC857B BC857C, BC858C Collector −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) VCE(sat) Base −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) VBE(sat) Base −Emitter On Voltage (IC = −2.0 mA, VCE = −5.0 V) (IC = −10 mA, VCE = −5.0 V) VBE(on) − V V V SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) http://onsemi.com 2 BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series TYPICAL CHARACTERISTICS − BC856 TJ = 25°C VCE = -5.0 V TA = 25°C -0.8 V, VOLTAGE (VOLTS) h FE , DC CURRENT GAIN (NORMALIZED) -1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 -0.6 VBE @ VCE = -5.0 V -0.4 -0.2 0.2 VCE(sat) @ IC/IB = 10 0 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -0.1 -0.2 -0.5 -1.0 Figure 2. “On” Voltage -2.0 -1.0 -1.6 -1.2 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -0.8 -0.4 TJ = 25°C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain -1.4 -1.8 -3.0 -0.2 f, T CURRENT-GAIN - BANDWIDTH PRODUCT Cib 10 8.0 Cob 4.0 2.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) -0.5 -1.0 -50 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -100 -200 Figure 4. Base−Emitter Temperature Coefficient TJ = 25°C 6.0 -55°C to 125°C -2.6 -20 40 20 qVB for VBE -2.2 Figure 3. Collector Saturation Region C, CAPACITANCE (pF) -50 -100 -200 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) 500 VCE = -5.0 V 200 100 50 20 -100 -1.0 -10 IC, COLLECTOR CURRENT (mA) -50 -100 Figure 5. Capacitance Figure 6. Current−Gain − Bandwidth Product http://onsemi.com 3 BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series TYPICAL CHARACTERISTICS − BC857/BC858 1.5 -1.0 TA = 25°C -0.9 VCE = -10 V TA = 25°C VBE(sat) @ IC/IB = 10 -0.8 V, VOLTAGE (VOLTS) h FE , NORMALIZED DC CURRENT GAIN 2.0 1.0 0.7 0.5 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 -0.2 0.3 VCE(sat) @ IC/IB = 10 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) 0 -0.1 -0.2 -100 -200 Figure 7. Normalized DC Current Gain 1.0 θVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) TA = 25°C -1.6 -1.2 IC = -10 mA IC = -50 mA IC = -200 mA IC = -100 mA IC = -20 mA -0.4 0 -0.02 -10 -0.1 -1.0 IB, BASE CURRENT (mA) -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 -20 -0.2 10 Cib 7.0 TA = 25°C 5.0 Cob 3.0 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -10 -1.0 IC, COLLECTOR CURRENT (mA) -100 Figure 10. Base−Emitter Temperature Coefficient f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 9. Collector Saturation Region C, CAPACITANCE (pF) -100 -50 Figure 8. “Saturation” and “On” Voltages -2.0 -0.8 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -20 -30 -40 400 300 200 150 VCE = -10 V TA = 25°C 100 80 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 11. Capacitances Figure 12. Current−Gain − Bandwidth Product http://onsemi.com 4 BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 ZqJA(t) = r(t) RqJA RqJA = 328°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) P(pk) t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.001 0 10 1.0 100 1.0k 10k 100k 1.0M t, TIME (ms) Figure 13. Thermal Response The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. -200 IC, COLLECTOR CURRENT (mA) 1s 3 ms -100 TA = 25°C -50 BC558 BC557 BC556 -10 -5.0 -2.0 -1.0 TJ = 25°C BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 14. Active Region Safe Operating Area ORDERING INFORMATION Device Marking Package Shipping† BC856BDW1T1G 3B SOT−363 (Pb−Free) 3,000 / Tape & Reel BC856BDW1T3G 3B SOT−363 (Pb−Free) 10,000 / Tape & Reel BC857BDW1T1G 3F SOT−363 (Pb−Free) 3,000 / Tape & Reel BC857CDW1T1G 3G SOT−363 (Pb−Free) 3,000 / Tape & Reel BC858CDW1T1G 3L SOT−363 (Pb−Free) 3,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W D e 6 5 4 1 2 3 HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. DIM A A1 A3 b C D E e L HE −E− b 6 PL 0.2 (0.008) M E MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 M A3 C A A1 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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