BCP53 Series, SBCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. • High Current: 1.5 A • NPN Complement is BCP56 • The SOT−223 Package can be soldered using wave or reflow. The • • • • http://onsemi.com MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Device Marking: BCP53T1 = AH BCP53−10T1 = AH−10 BCP53−16T1 = AH−16 AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Symbol Value Unit Collector−Emitter Voltage VCEO −80 Vdc Collector−Base Voltage VCBO −100 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25°C (Note 1.) Derate above 25°C PD 1.5 12 W mW/°C −65 to +150 °C Symbol Max Unit RqJA 83.3 °C/W 260 10 °C s Operating and Storage Temperature Range TJ, Tstg BASE 1 EMITTER 3 MARKING DIAGRAM SOT−223 CASE 318E STYLE 1 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating COLLECTOR 2,4 A Y W XXXXX G Thermal Resistance, Junction to Ambient (surface mounted) Lead Temperature for Soldering, 0.0625″ from case Time in Solder Bath TL ORDERING INFORMATION Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. © Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 8 1 = Assembly Location = Year = Work Week = Specific Device Code = Pb−Free Package (*Note: Microdot may be in either location) Package Shipping† BCP53T1G SOT−223 (Pb−Free) 1000 / Tape & Reel SBCP53−10T1G SOT−223 (Pb−Free) 1000 / Tape & Reel BCP53−10T1G SOT−223 (Pb−Free) 1000 / Tape & Reel SBCP53−10T1G SOT−223 (Pb−Free) 1000 / Tape & Reel BCP53−16T1G SOT−223 (Pb−Free) 1000 / Tape & Reel SBCP53−16T1G SOT−223 (Pb−Free) 1000 / Tape & Reel BCP53−16T3G SOT−223 (Pb−Free) 4000 / Tape & Reel Device THERMAL CHARACTERISTICS Characteristic AYW XXXXXG G 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BCP53T1/D BCP53 Series, SBCP53 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector−Base Breakdown Voltage (IC = −100 mAdc, IE = 0) V(BR)CBO −100 − − Vdc Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO −80 − − Vdc Collector−Emitter Breakdown Voltage (IC = −100 mAdc, RBE = 1.0 kW) V(BR)CER −100 − − Vdc Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO −5.0 − − Vdc Collector−Base Cutoff Current (VCB = − 30 Vdc, IE = 0) ICBO − − −100 nAdc Emitter−Base Cutoff Current (VEB = − 5.0 Vdc, IC = 0) IEBO − − −10 mAdc DC Current Gain (IC = − 5.0 mAdc, VCE = − 2.0 Vdc) All Part Types (IC = −150 mAdc, VCE = − 2.0 Vdc) BCP53, SBCP53 BCP53−10, SBCP53−10 BCP53−16, SBCP53−16 (IC = − 500 mAdc, VCE = − 2.0 Vdc) All Part Types hFE 25 40 63 100 25 − − − − − − 250 160 250 − − Collector−Emitter Saturation Voltage (IC = − 500 mAdc, IB = − 50 mAdc) VCE(sat) − − −0.5 Vdc Base−Emitter On Voltage (IC = − 500 mAdc, VCE = − 2.0 Vdc) VBE(on) − − −1.0 Vdc fT − 50 − MHz Characteristics OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = −10 mAdc, VCE = − 5.0 Vdc, f = 35 MHz) http://onsemi.com 2 BCP53 Series, SBCP53 Series 2.0 1.8 IC/IB = 10 200 BCP53, −10, −16 +150°C 1.6 1.4 −55°C 1.2 1.0 +25°C 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 150°C, 5 V 180 hFE, DC CURRENT GAIN Vce(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) TYPICAL CHARACTERISTICS 1 150°C, 2 V 160 140 25°C, 5 V 120 25°C, 2 V 100 80 −55°C, 5 V 60 −55°C, 2 V 40 20 0 10 0.001 0.01 IC, COLLECTOR CURRENT (mA) 120 25°C, 5 V 100 25°C, 2 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 300 150°C, 2 V 140 80 60 −55°C, 5 V 40 −55°C, 2 V 0.001 0.1 1 25°C, 2 V 100 −55°C, 5 V 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current (BCP53−10) Figure 4. DC Current Gain vs. Collector Current (BCP53−16) IC/IB = 10 1.2 BCP53, −10 −55°C +25°C 0.5 0.4 0.001 IC, COLLECTOR CURRENT (A) 0.7 0.6 −55°C, 2 V 50 0 1.0 0.8 25°C, 5 V 150 10 1.1 0.9 150°C, 2 V 200 Vbe(sat), BASE EMITTER SATURATION VOLTAGE (V) Vbe(sat), BASE EMITTER SATURATION VOLTAGE (V) 1.2 0.01 150°C, 5 V 250 20 0 +150°C 0.001 0.01 0.1 10 Figure 2. DC Current Gain vs. Collector Current (BCP53) 150°C, 5 V 160 1 IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 180 0.1 1 10 IC/IB = 10 1.1 BCP53 −16 1.0 0.9 −55°C 0.8 0.7 +25°C 0.6 0.5 0.4 +150°C 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. BCP53, −10 Base Emitter Saturation Voltage vs. Collector Current Figure 6. BCP53−16 Base Emitter Saturation Voltage vs. Collector Current http://onsemi.com 3 10 10 BCP53 Series, SBCP53 Series TYPICAL CHARACTERISTICS 1.0 0.9 0.8 −55°C 0.7 0.6 +25°C 0.5 0.4 0.3 Vce, COLLECTOR−EMITTER VOLTAGE (V) Vbe(sat), BASE EMITTER SATURATION VOLTAGE (V) 1.1 1.2 BCP53, −10 Vce = 2 V 1.0 +150°C 0.001 0.01 0.1 10 0.7 +25°C 0.6 0.5 +150°C 0.4 0.3 0.2 0.001 IC = 1.0 A 0.1 1 10 110 IC = 1.5 A IC = 500 mA IC = 100 mA 0.5 0.01 Figure 8. BCP53−16 Base Emitter Turn−On Voltage vs. Collector Current 0.4 0.3 0.2 BCP53−10 90 BCP53 80 70 60 BCP53−16 50 0.001 0.01 0.1 40 1 0 1 2 Figure 9. BCP53, −10, −16 Saturation Region Figure 10. Input Capacitance Ic, COLLECTOR CURRENT (A) 20 BCP53−10 15 BCP53 10 BCP53−16 0 4 VOLTAGE (V) 10 5 3 Ib, BASE CURRENT (A) 25 CAPACITANCE (pF) −55°C 0.8 Figure 7. BCP53, −10 Base Emitter Turn−On Voltage vs. Collector Current VBE(on) 0.7 0 0.9 IC, COLLECTOR CURRENT (A) 0.8 0.1 0 1.0 100 0.6 BCP53 −16 Vce = 2 V 1.1 IC, COLLECTOR CURRENT (A) BCP53, −10, −16 0.9 1 CAPACITANCE (pF) Vbe(on), BASE EMITTER TURN−ON VOLTAGE (V) 1.2 2 4 6 8 10 12 14 16 18 100 ms 10 ms 1 ms 1s 1 CONTINUOUS THERMAL LIMIT 0.1 SINGLE PULSE TEST AT Tamb = 25°C 0.01 20 0.1 1 10 VOLTAGE (V) Vce, COLLECTOR EMITTER VOLTAGE (V) Figure 11. Output Capacitance Figure 12. Standard Operating Area http://onsemi.com 4 5 100 BCP53 Series, SBCP53 Series PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE N D b1 4 HE E 1 2 3 b e1 e 0.08 (0003) A1 C q A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM A 1.50 1.63 1.75 0.060 0.064 A1 0.02 0.06 0.10 0.001 0.002 b 0.60 0.75 0.89 0.024 0.030 b1 2.90 3.06 3.20 0.115 0.121 c 0.24 0.29 0.35 0.009 0.012 D 6.30 6.50 6.70 0.249 0.256 E 3.30 3.50 3.70 0.130 0.138 e 2.20 2.30 2.40 0.087 0.091 e1 0.85 0.94 1.05 0.033 0.037 L 0.20 −−− −−− 0.008 −−− L1 1.50 1.75 2.00 0.060 0.069 HE 6.70 7.00 7.30 0.264 0.276 0° 10° 0° − − q STYLE 1: PIN 1. 2. 3. 4. L1 MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 −−− 0.078 0.287 10° BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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