BCP56 Series, SBCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current: 1.0 A • The SOT−223 package can be soldered using wave or reflow. The • • • • • formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Available in 12 mm Tape and Reel Use BCP56T1 to Order the 7 inch/1000 Unit Reel Use BCP56T3 to Order the 13 inch/4000 Unit Reel PNP Complement is BCP53T1 AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT COLLECTOR 2,4 BASE 1 EMITTER 3 4 1 2 3 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value Unit Collector−Emitter Voltage VCEO 80 Vdc Collector−Base Voltage VCBO 100 Vdc Emitter−Base Voltage VEBO 5 Vdc Collector Current IC 1 Adc Total Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C PD 1.5 12 W mW/°C Operating and Storage Temperature Range TJ, Tstg −65 to 150 °C Rating SOT−223 CASE 318E STYLE 1 MARKING DIAGRAM AYW xxxxxG G 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient (surface mounted) Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol Max Unit RqJA 83.3 °C/W 260 10 °C Sec TL Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in. © Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 8 1 xx = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: BCP56T1/D BCP56 Series, SBCP56 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector−Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 100 − − Vdc Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 80 − − Vdc Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − − Vdc Collector−Base Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO − − 100 nAdc Emitter−Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO − − 10 mAdc 25 40 63 100 25 − − − − − − 250 160 250 − Characteristics OFF CHARACTERISTICS ON CHARACTERISTICS (Note 2) hFE DC Current Gain (IC = 5.0 mA, VCE = 2.0 V) All Part Types (IC = 150 mA, VCE = 2.0 V)BCP56T1, SBCP56T1, SBCP56T3 BCP56−10T1, SBCP56−10T1 BCP56−16T1, SBCP56−16T1, SBCP56−16T3 (IC = 500 mA, VCE = 2.0 V)All Types − Collector−Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) − − 0.5 Vdc Base−Emitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc) VBE(on) − − 1.0 Vdc fT − 130 − MHz DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 35 MHz) 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0% ORDERING INFORMATION Device BCP56T1G Marking Package Shipping† BH SOT−223 (Pb−Free) 1000 / Tape & Reel BH SOT−223 (Pb−Free) 4000 / Tape & Reel BH−10 SOT−223 (Pb−Free) 1000 / Tape & Reel BH−16 SOT−223 (Pb−Free) 1000 / Tape & Reel BH−16 SOT−223 (Pb−Free) 4000 / Tape & Reel SBCP56T1G BCP56T3G SBCP56T3G BCP56−10T1G SBCP56−10T1G BCP56−16T1G SBCP56−16T1G BCP56−16T3G SBCP56−16T3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 BCP56 Series, SBCP56 Series TYPICAL ELECTRICAL CHARACTERISTICS hFE, DC CURRENT GAIN 1000 TJ = 125°C TJ = 25°C 100 10 TJ = - 55°C 1 10 100 1000 IC, COLLECTOR CURRENT (mA) 1000 80 60 TJ = 25°C C, CAPACITANCE (pF) f, T CURRENT‐GAIN — BANDWIDTH PRODUCT (MHz) Figure 1. DC Current Gain 100 40 Cibo 20 10 8.0 6.0 10 1.0 10 100 IC, COLLECTOR CURRENT (mA) Cobo 4.0 0.1 1000 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Current−Gain − Bandwidth Product 1.2 IC/IB = 10 1.1 150°C VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 100 Figure 3. Capacitance 1 25°C −55°C 0.1 0.01 50 0.001 0.01 0.1 1.0 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 0.3 0.2 1 IC/IB = 10 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 4. Collector Emitter Saturation Voltage vs. Collector Current Figure 5. Base Emitter Saturation Voltage vs. Collector Current http://onsemi.com 3 1 BCP56 Series, SBCP56 Series 1.2 1.1 VCE = 2 V 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 0.001 0.01 0.1 1 VCE , COLLECTOR‐EMITTER VOLTAGE (VOLTS) VBE(on), BASE−EMITTER VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS 1.0 TJ = 25°C 0.8 IC = 10mA 0.6 100mA 250mA 500mA 0.4 0.2 0 0.05 0.1 IC, COLLECTOR CURRENT (A) Figure 6. Base Emitter Voltage vs. Collector Current 0.2 1.0 2.0 0.5 5.0 10 IC, COLLECTOR CURRENT (mA) 20 50 Figure 7. Collector Saturation Region 1 1.6 1S 1 mS 1.4 PD, POWER DISSIPATION (W) IC, COLLECTOR CURRENT (A) 50 mA 100 mS 10 mS 0.1 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.1 1 10 100 0.0 VCE, COLLECTOR EMITTER VOLTAGE (V) 40 60 80 120 100 TA, AMBIENT TEMPERATURE (°C) Figure 8. Safe Operating Area Figure 9. Power Derating Curve 0 http://onsemi.com 4 20 140 160 BCP56 Series, SBCP56 Series PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE N D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 4 HE 1 2 3 b e1 e A1 C q A 0.08 (0003) DIM A A1 b b1 c D E e e1 L L1 HE E MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 0° q L STYLE 1: PIN 1. 2. 3. 4. L1 MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 −−− −−− 1.75 2.00 7.00 7.30 10° − MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 −−− 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 −−− 0.078 0.287 10° BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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