ONSEMI BCP53

BCP53 Series
PNP Silicon
Epitaxial Transistors
This PNP Silicon Epitaxial transistor is designed for use in audio
amplifier applications. The device is housed in the SOT−223 package
which is designed for medium power surface mount applications.
• High Current
• NPN Complement is BCP56
• The SOT−223 Package can be soldered using wave or reflow.
•
•
•
The formed leads absorb thermal stress during soldering,
eliminating the possibility of damage to the die
Device Marking:
BCP53T1 = AH
BCP53−10T1 = AH−10
BCP53−16T1 = AH−16
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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MEDIUM POWER HIGH
CURRENT SURFACE MOUNT
PNP TRANSISTORS
COLLECTOR 2, 4
1
BASE
EMITTER 3
MARKING DIAGRAM
4
1
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
−80
Vdc
Collector−Base Voltage
VCBO
−100
Vdc
Emitter−Base Voltage
VEBO
−5.0
Vdc
Collector Current
IC
1.5
Adc
Total Power Dissipation
@ TA = 25°C (Note 1)
Derate above 25°C
PD
1.5
12
W
mW/°C
Operating and Storage
Temperature Range
TJ, Tstg
−65 to +150
°C
3
SOT−223
CASE 318E
STYLE 1
A
Y
W
XXXXX
G
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
(Surface Mounted)
RqJA
83.3
°C/W
260
10
°C
s
Lead Temperature for Soldering,
0.0625″ from case
Time in Solder Bath
TL
= Assembly Location
= Year
= Work Week
= Specific Device Code
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping†
BCP53T1G
SOT−223
(Pb−Free)
1000/Tape & Reel
SBCP53−10T1G
SOT−223
(Pb−Free)
1000/Tape & Reel
BCP53−10T1G
SOT−223
(Pb−Free)
1000/Tape & Reel
SBCP53−10T1G
SOT−223
(Pb−Free)
1000/Tape & Reel
BCP53−16T1G
SOT−223
(Pb−Free)
1000/Tape & Reel
SBCP53−16T1G
SOT−223
(Pb−Free)
1000/Tape & Reel
BCP53−16T3G
SOT−223
(Pb−Free)
4000/Tape & Reel
THERMAL CHARACTERISTICS
Characteristic
1
(*Note: Microdot may be in either location)
Device
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
AYW
XXXXXG
G
2
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 10
1
Publication Order Number:
BCP53T1/D
BCP53 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
−100
−
−
−80
−
−
−100
−
−
−5.0
−
−
−
−
−100
−
−
−10
Unit
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
V(BR)CBO
Collector−Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
Collector−Emitter Breakdown Voltage
(IC = −100 mAdc, RBE = 1.0 kW)
V(BR)CER
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
Collector−Base Cutoff Current
(VCB = − 30 Vdc, IE = 0)
ICBO
Emitter−Base Cutoff Current
(VEB = − 5.0 Vdc, IC = 0)
IEBO
Vdc
Vdc
Vdc
Vdc
nAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = − 5.0 mAdc, VCE = − 2.0 Vdc)
All Part Types
(IC = −150 mAdc, VCE = − 2.0 Vdc)
BCP53, SBCP53
BCP53−10, SBCP53−10
BCP53−16, SBCP53−16
(IC = − 500 mAdc, VCE = − 2.0 Vdc)
All Part Types
hFE
Collector−Emitter Saturation Voltage
(IC = − 500 mAdc, IB = − 50 mAdc)
VCE(sat)
Base−Emitter On Voltage
(IC = − 500 mAdc, VCE = − 2.0 Vdc)
VBE(on)
−
25
−
−
40
63
100
−
−
−
250
160
250
25
−
−
−
−
−0.5
−
−
−1.0
−
50
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mAdc, VCE = − 5.0 Vdc, f = 35 MHz)
fT
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2
MHz
BCP53 Series
2.0
IC/IB = 10
200
BCP53, −10, −16
+150°C
1.6
150°C, 5 V
180
1.8
1.4
hFE, DC CURRENT GAIN
Vce(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V)
TYPICAL CHARACTERISTICS
−55°C
1.2
1.0
+25°C
0.8
0.6
0.4
150°C, 2 V
160
140
25°C, 5 V
120
25°C, 2 V
100
80
−55°C, 5 V
60
−55°C, 2 V
40
20
0
0.2
0
0.001
0.01
0.1
1
0.001
10
0.01
IC, COLLECTOR CURRENT (mA)
300
150°C, 5 V
150°C, 5 V
150°C, 2 V
100
25°C, 2 V
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
160
25°C, 5 V
80
60
−55°C, 5 V
40
−55°C, 2 V
10
Figure 2. DC Current Gain vs. Collector
Current (BCP53)
180
120
1
IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
140
0.1
250
150°C, 2 V
200
25°C, 5 V
150
25°C, 2 V
100
−55°C, 5 V
−55°C, 2 V
50
20
0
0
0.001
0.1
1
0.001
10
1
Figure 3. DC Current Gain vs. Collector
Current (BCP53−10)
Figure 4. DC Current Gain vs. Collector
Current (BCP53−16)
IC/IB = 10
0.9
−55°C
0.8
0.7
+25°C
0.5
+150°C
0.001
IC/IB = 10
0.1
1
10
BCP53 −16
1.1
1.0
0.9
−55°C
0.8
0.7
+25°C
0.6
0.5
+150°C
0.4
0.01
10
1.2
BCP53, −10
1.0
0.4
0.1
IC, COLLECTOR CURRENT (A)
1.1
0.6
0.01
IC, COLLECTOR CURRENT (A)
Vbe(sat), BASE EMITTER SATURATION VOLTAGE (V)
Vbe(sat), BASE EMITTER SATURATION VOLTAGE (V)
1.2
0.01
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 5. BCP53, −10 Base Emitter Saturation
Voltage vs. Collector Current
Figure 6. BCP53−16 Base Emitter Saturation
Voltage vs. Collector Current
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3
10
BCP53 Series
TYPICAL CHARACTERISTICS
1.2
1.1
1.0
0.9
0.8
−55°C
0.7
0.6
+25°C
0.5
0.4
0.3
+150°C
0.001
1.0
0.01
0.1
1.0
0.9
−55°C
0.8
0.7 +25°C
0.6
0.5
+150°C
0.4
0.3
0.2
10
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 7. BCP53, −10 Base Emitter Turn−On
Voltage vs. Collector Current VBE(on)
Figure 8. BCP53−16 Base Emitter Turn−On
Voltage vs. Collector Current
IC = 1.0 A
110
IC = 1.5 A
BCP53−10
100
0.8
IC = 500 mA
0.7
0.6
IC = 100 mA
0.5
0.4
0.3
90
BCP53
80
70
60
BCP53−16
0.2
50
0.1
0
40
0.001
0.01
0.1
0
1
1
2
4
VOLTAGE (V)
Figure 9. BCP53, −10, −16 Saturation Region
Figure 10. Input Capacitance
10
Ic, COLLECTOR CURRENT (A)
20
BCP53−10
15
BCP53
10
BCP53−16
5
3
Ib, BASE CURRENT (A)
25
CAPACITANCE (pF)
BCP53 −16
Vce = 2 V
1.1
IC, COLLECTOR CURRENT (A)
BCP53, −10, −16
0.9
1
CAPACITANCE (pF)
Vce, COLLECTOR−EMITTER VOLTAGE (V)
BCP53, −10
Vce = 2 V
Vbe(sat), BASE EMITTER SATURATION VOLTAGE (V)
Vbe(on), BASE EMITTER TURN−ON
VOLTAGE (V)
1.2
0
5
100 ms 10 ms
1 ms
1s
1
CONTINUOUS THERMAL LIMIT
0.1
SINGLE PULSE TEST AT Tamb = 25°C
0.01
0
2
4
6
8
10
12
14
16
18
20
0.1
1
10
VOLTAGE (V)
Vce, COLLECTOR EMITTER VOLTAGE (V)
Figure 11. Output Capacitance
Figure 12. Standard Operating Area
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4
100
BCP53 Series
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,
1994.
2. CONTROLLING DIMENSION: INCH.
4
HE
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE
E
1
2
3
b
e1
e
0.08 (0003)
A1
C
q
A
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
q
L
STYLE 1:
PIN 1.
2.
3.
4.
L1
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
−−−
−−−
1.75
2.00
7.00
7.30
10°
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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BCP53T1/D