NDF06N60Z, NDP06N60Z N-Channel Power MOSFET 0.98 W, 600 Volts Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant http://onsemi.com Applications • Adapter (Notebook, Printer, Gaming) • LCD Panel Power • Lighting Ballasts VDSS RDS(ON) (TYP) @ 3 A 600 V 0.98 Ω N−Channel D (2) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Drain−to−Source Voltage VDSS 600 (Note 1) V Continuous Drain Current ID 6.0 (Note 2) A Continuous Drain Current TA = 100°C ID 3.8 (Note 2) A Pulsed Drain Current, VGS @ 10 V IDM 20 (Note 2) A Power Dissipation (Note 1) PD Gate−to−Source Voltage VGS ±30 V Single Pulse Avalanche Energy, L = 6.3 mH, ID = 6.0 A EAS 113 mJ ESD (HBM) (JESD 22−114−B) Vesd 3000 V RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 13) VISO Peak Diode Recovery dv/dt 4.5 (Note 3) V/ns Continuous Source Current (Body Diode) IS 6.0 A Maximum Temperature for Soldering Leads, 0.063″ (1.6 mm) from Case for 10 s Package Body for 10 s TL TPKG 300 260 °C TJ, Tstg −55 to 150 °C Operating Junction and Storage Temperature Range NDF06N60Z NDP06N60Z 31 113 4500 Unit W − S (3) TO−220FP CASE 221D STYLE 1 MARKING DIAGRAM NDF06N60ZG or NDP06N60ZG AYWW V Gate Source TO−220AB CASE 221A STYLE 5 Drain Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1″ sq. pad size, 1 oz cu 2. Limited by maximum junction temperature 3. ISD = 6.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C © Semiconductor Components Industries, LLC, 2009 June, 2009 − Rev. 0 G (1) 1 A Y WW G = Location Code = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping NDF06N60ZG TO−220FP 50 Units/Rail NDP06N60ZG TO−220AB In Development Publication Order Number: NDF06N60Z/D NDF06N60Z, NDP06N60Z THERMAL RESISTANCE Symbol NDF06N60Z NDP06N60Z Unit Junction−to−Case (Drain) Parameter RqJC 4.0 1.1 °C/W Junction−to−Ambient Steady State (Note 4) RqJA 50 50 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Test Conditions Symbol Min VGS = 0 V, ID = 1 mA BVDSS 600 Reference to 25°C, ID = 1 mA DBVDSS/ DTJ Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain−to−Source Leakage Current 25°C VDS = 600 V, VGS = 0 V Gate−to−Source Forward Leakage V 0.6 IDSS V/°C 1 150°C mA 50 VGS = ±20 V IGSS Static Drain−to−Source On−Resistance VGS = 10 V, ID = 3.0 A RDS(on) Gate Threshold Voltage VDS = VGS, ID = 250 mA VGS(th) VDS = 15 V, ID = 3.0 A gFS 5.0 S Ciss 923 pF Coss 106 Crss 23 Qg 31 ±10 mA 1.2 W 4.5 V ON CHARACTERISTICS (Note 5) Forward Transconductance 0.98 3.0 DYNAMIC CHARACTERISTICS Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Output Capacitance Reverse Transfer Capacitance Total Gate Charge VDD = 300 V, ID = 6.0 A, VGS = 10 V Gate−to−Source Charge Gate−to−Drain (“Miller”) Charge Gate Resistance nC Qgs 6.3 Qgd 17 Rg 3.2 W td(on) 13 ns RESISTIVE SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time VDD = 300 V, ID = 6.0 A, VGS = 10 V, RG = 5 Ω Fall Time tr 17 td(off) 30 tf 28 SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted) Diode Forward Voltage IS = 6.0 A, VGS = 0 V VSD Reverse Recovery Time VGS = 0 V, VDD = 30 V IS = 6.0 A, di/dt = 100 A/ms trr 338 ns Qrr 2.0 mC Reverse Recovery Charge 4. Insertion mounted 5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 1.6 V NDF06N60Z, NDP06N60Z TYPICAL CHARACTERISTICS 12 6.8 V VDS ≥ 30 V 6.6 V 15 V 8 6.4 V 6 6.2 V 6.0 V 4 5.8 V 2 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 10 V 10 7V 5.6 V 0 5 10 15 20 8 6 25 TJ = 150°C 4 2 TJ = −55°C 3 6 5 7 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 1.5 1 0.5 5 6 7 8 9 10 VGS (V) 8 1.75 TJ = 25°C 1.5 1.25 VGS = 10 V 1 0.75 0.5 0 2 4 6 8 10 12 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.6 10,000 VGS = 0 V ID = 3 A VGS = 10 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 4 VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 3 A TJ = 25°C 2.2 TJ = 25°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 2 0 10 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) TJ = 25°C ID, DRAIN CURRENT (A) 12 1.8 1.4 1.0 TJ = 150°C 1000 100 0.6 TJ = 100°C 0.2 −50 −25 0 25 50 75 100 125 150 10 0 100 200 300 400 500 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 600 NDF06N60Z, NDP06N60Z TYPICAL CHARACTERISTICS 400 QT 15 1500 Ciss 1000 Crss 0 VDS 50 100 150 200 200 Qgs VGS 0 100 TJ = 25°C ID = 6 A 0 5 10 15 20 25 30 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 0 35 IS, SOURCE CURRENT (A) 6 VDD = 300 V ID = 6 A VGS = 10 V td(off) 100 tr tf td(on) 10 1 10 5 VGS = 0 V TJ = 25°C 4 3 2 1 0 0.4 100 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 ID, DRAIN CURRENT (A) t, TIME (ns) Qgd 5 1000 1 300 10 Coss 500 0 VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) VGS = 0 V TJ = 25°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 20 2000 10 ms 1 ms 10 100 ms 10 ms dc 1 VGS = 10 V Single Pulse TC = 25°C 0.1 0.01 RDS(on) Limit Thermal Limit Package Limit 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area for NDF06N60Z http://onsemi.com 4 1000 NDF06N60Z, NDP06N60Z TYPICAL CHARACTERISTICS 10 R(t) (C/W) 1.0 0.1 50% (DUTY CYCLE) 20% 10% 5.0% 2.0% 1.0% 0.01 SINGLE PULSE 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 PULSE TIME (s) Figure 12. Thermal Impedance for NDF06N60Z LEADS HEATSINK 0.110″ MIN Figure 13. Mounting Position for Isolation Test Measurement made between leads and heatsink with all leads shorted together. http://onsemi.com 5 100 1000 NDF06N60Z, NDP06N60Z PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE J −T− −B− F SEATING PLANE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. S Q A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B TO−220AB CASE 221A−09 ISSUE AE −T− B F T SEATING PLANE C S A U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z 4 Q MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE Y M INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 DIM A B C D F G H J K L N Q R S U U J G D INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 5: PIN 1. 2. 3. 4. N MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 GATE DRAIN SOURCE DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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