MUN2111T1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−59 package which is designed for low power surface mount applications. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: Class 1 ESD Rating − Machine Model: Class B • The SC−59 package can be soldered using wave or reflow. The modified gull−winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. • Pb−Free Package is Available MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Base Voltage VCBO 50 Vdc Collector−Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Max Unit PD 230 (Note 1) 338 (Note 2) 1.8 (Note 1) 2.7 (Note 2) mW Collector Current http://onsemi.com PIN 3 COLLECTOR (OUTPUT) R1 PIN 2 BASE (INPUT) R2 PIN 1 EMITTER (GROUND) 3 2 1 SC−59 CASE 318D PLASTIC MARKING DIAGRAM 6x M THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C °C/W Thermal Resistance − Junction−to−Ambient RqJA 540 (Note 1) 370 (Note 2) °C/W Thermal Resistance − Junction−to−Lead RqJL 264 (Note 1) 287 (Note 2) °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 6x = Specific Device Code* M = Date Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. DEVICE MARKING INFORMATION *See device marking table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 inch Pad. Semiconductor Components Industries, LLC, 2005 January, 2005 − Rev. 14 1 Publication Order Number: MUN2111T1/D MUN2111T1 Series DEVICE MARKING AND RESISTOR VALUES Package Marking R1 (K) R2 (K) Shipping † SC−59 6A 10 10 3000 / Tape & Reel SC−59 (Pb−Free) 6A 10 10 3000 / Tape & Reel SC−59 6B 22 22 3000 / Tape & Reel SC−59 (Pb−Free) 6B 22 22 3000 / Tape & Reel SC−59 6C 47 47 3000 / Tape & Reel SC−59 (Pb−Free) 6C 47 47 3000 / Tape & Reel SC−59 6D 10 47 3000 / Tape & Reel SC−59 (Pb−Free) 6D 10 47 3000 / Tape & Reel MUN2115T1 (Note 3) SC−59 6E 10 ∞ 3000 / Tape & Reel MUN2116T1 (Note 3) SC−59 6F 4.7 ∞ 3000 / Tape & Reel SC−59 (Pb−Free) 6F 4.7 ∞ 3000 / Tape & Reel MUN2130T1 (Note 3) SC−59 6G 1.0 1.0 3000 / Tape & Reel MUN2131T1 (Note 3) SC−59 6H 2.2 2.2 3000 / Tape & Reel MUN2132T1 (Note 3) SC−59 6J 4.7 4.7 3000 / Tape & Reel SC−59 (Pb−Free) 6J 4.7 4.7 3000 / Tape & Reel MUN2133T1 (Note 3) SC−59 6K 4.7 47 3000 / Tape & Reel MUN2134T1 (Note 3) SC−59 6L 22 47 3000 / Tape & Reel MUN2136T1 SC−59 6N 100 100 3000 / Tape & Reel MUN2137T1 SC−59 6P 47 22 3000 / Tape & Reel MUN2140T1 (Note 3) SC−59 6T 47 ∞ 3000 / Tape & Reel Device MUN2111T1 MUN2111T1G MUN2112T1 MUN2112T1G MUN2113T1 MUN2113T1G MUN2114T1 MUN2114T1G MUN2116T1G (Note 3) MUN2132T1G (Note 3) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3. New resistor combinations. Updated curves to follow in subsequent data sheets. http://onsemi.com 2 MUN2111T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit ICBO − − 100 nAdc ICEO − − 500 nAdc IEBO − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.05 0.13 0.20 mAdc Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector−Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 120 60 100 140 140 250 250 5.0 15 27 140 130 150 140 250 − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Characteristic OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2136T1 MUN2137T1 MUN2140T1 ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2136T1 MUN2137T1 MUN2140T1 Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2130T1 MUN2136T1 MUN2137T1 MUN2131T1 MUN2116T1 MUN2132T1 MUN2134T1 MUN2140T1 (IC = 10 mA, IB = 5.0 mA) (IC = 10 mA, IB = 1.0 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) MUN2111T1 MUN2112T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2113T1 MUN2140T1 MUN2136T1 MUN2137T1 (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 3 VCE(sat) VOL Vdc Vdc MUN2111T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VOH 4.9 − − Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 70 32.9 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 100 47 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 130 61.1 61.1 kW 0.8 0.17 − 0.8 0.055 0.38 1.7 1.0 0.21 − 1.0 0.1 0.47 2.1 1.2 0.25 − 1.2 0.185 0.56 2.6 ON CHARACTERISTICS (Note 4) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) MUN2130T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) MUN2115T1 MUN2116T1 MUN2131T1 MUN2132T1 MUN2140T1 Input Resistor MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2136T1 MUN2137T1 MUN2140T1 Resistor Ratio MUN2111T1/MUN2112T1/MUN2113T1/ MUN2136T1 MUN2114T1 MUN2115T1/MUN2116T1/MUN2140T1 MUN2130T1/MUN2131T1/MUN2132T1 MUN2133T1 MUN2134T1 MUN2137T1 R1/R2 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. +12 V PD, POWER DISSIPATION (mW) 350 300 250 Typical Application for PNP BRTs 200 150 100 RqJA= 370°C/W LOAD 50 0 −50 0 50 100 150 TA, AMBIENT TEMPERATURE (5°C) Figure 1. Derating Curve Figure 2. Inexpensive, Unregulated Current Source http://onsemi.com 4 MUN2111T1 Series 1000 1 VCE = 10 V IC/IB = 10 TA = −2°5C hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN2111T1 25°C 75°C 0.1 0.01 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA = 75°C 100 −25°C 10 80 1 10 IC, COLLECTOR CURRENT (mA) Figure 3. VCE(sat) vs. IC 100 IC, COLLECTOR CURRENT (mA) 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 10 TA = −25°C 1 0.1 VO = 5 V 0.01 0.001 50 25°C 75°C 0 Figure 5. Output Capacitance 6 7 8 2 3 4 5 Vin, INPUT VOLTAGE (VOLTS) 1 VO = 0.2 V TA = −25°C 10 25°C 75°C 1 0.1 0 10 9 Figure 6. Output Current vs. Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) f = 1 MHz lE = 0 V TA = 25°C 2 0 100 Figure 4. DC Current Gain 4 3 25°C 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 7. Input Voltage vs. Output Current http://onsemi.com 5 50 10 MUN2111T1 Series 1000 10 VCE = 10 V IC/IB = 10 TA = −25°C hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN2112T1 25°C 1 75°C 0.1 0.01 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA = 75°C 100 10 80 1 10 Figure 9. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 2 1 0 10 TA = −25°C 1 0.1 0.01 VO = 5 V 1 0 Figure 10. Output Capacitance 100 25°C 75°C 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 4 0 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 25°C 10 75°C 1 0 9 Figure 11. Output Current vs. Input Voltage TA = −25°C 0.1 10 0 IC, COLLECTOR CURRENT (mA) Figure 8. VCE(sat) vs. IC 3 25°C −25°C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 12. Input Voltage vs. Output Current http://onsemi.com 6 50 10 MUN2111T1 Series 1 1000 IC/IB = 10 TA = −25°C 25°C 75°C 0.1 0.01 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN2113T1 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA = 75°C 25°C 10 40 −25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 14. DC Current Gain Figure 13. VCE(sat) vs. IC 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 0.6 0.4 0.2 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) −25°C 0.1 0.01 VO = 5 V 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = −25°C 25°C 10 75°C 1 0 9 Figure 16. Output Current vs. Input Voltage 100 0.1 25°C 1 0.001 0 50 TA = 75°C 10 Figure 15. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1 0.8 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 17. Input Voltage vs. Output Current http://onsemi.com 7 50 10 MUN2111T1 Series 180 1 IC/IB = 10 25°C 140 0.1 75°C 25°C −25°C 120 100 0.01 80 60 40 20 0.00 0 1 20 40 60 IC, COLLECTOR CURRENT (mA) 0 80 1 2 4.5 6 8 10 15 20 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) 100 3.5 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 4 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 TA = 75°C 10 VO = 5 V 1 20 25 30 35 40 45 50 25°C −25°C 0 2 4 Figure 20. Output Capacitance TA = −25°C 25°C 75°C 1 VO = 0.2 V 0 8 Figure 21. Output Current vs. Input Voltage 10 0.1 6 Vin, INPUT VOLTAGE (VOLTS) VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) 0 4 Figure 19. DC Current Gain Figure 18. VCE(sat) vs. IC Cob, CAPACITANCE (pF) TA = 75°C VCE = 10 V 160 TA = −25°C hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN2114T1 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 22. Input Voltage vs. Output Current http://onsemi.com 8 50 10 MUN2111T1 Series 1 1000 IC/IB =10 25°C 75°C 0.1 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS − MUN2131T1 −25°C 0.01 0 5 10 15 20 25 30 100 25°C 75°C 10 1 35 IC/IB = 10 −25°C 1 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 23. VCE(sat) vs. IC Figure 24. DC Current Gain 10 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 A TA = 25°C 8 6 4 2 0 5 10 15 20 25 30 35 40 45 75°C 10 1 TA = 25°C 0.01 0.01 50 55 −25°C 0 1 2 3 VO = 5 V 4 5 6 7 VR, REVERSE BIAS VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 25. Output Capacitance Figure 26. Output Current vs. Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 12 0 100 TA = −25°C 75°C 1 25°C VO = 0.2 V 0.1 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) Figure 27. Input Voltage vs. Output Current http://onsemi.com 9 25 8 MUN2111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN2136T1 1000 75°C hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 0.1 0.01 75°C 25°C −25°C 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 10 1 7 1 10 IC, COLLECTOR CURRENT (mA) Figure 28. Maximum Collector Voltage vs. Collector Current 100 IC, COLLECTOR CURRENT (mA) 1.0 f = 1 MHz IE = 0 V TA = 25°C 0.8 0.6 0.4 0.2 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 25°C TA = −25°C 1 VO = 5 V 0.1 60 0 1 2 3 4 TA = −25°C VO = 0.2 V 75°C 0 2 6 7 8 9 Figure 31. Output Current vs. Input Voltage 10 1 5 Vin, INPUT VOLTAGE (VOLTS) 100 25°C 75°C 10 Figure 30. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 29. DC Current Gain 1.2 0 25°C VCE = 10 V IC/IB = 10 0 TA = −25°C 100 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 Figure 32. Input Voltage vs. Output Current http://onsemi.com 10 20 10 MUN2111T1 Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN2137T1 1000 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 TA = −25°C 75°C 0.1 25°C 0.01 IC/IB = 10 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 75°C 25°C VCE = 10 V 10 50 TA = −25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 33. Maximum Collector Voltage vs. Collector Current Figure 34. DC Current Gain 100 1.0 IC, COLLECTOR CURRENT (mA) 1.2 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) TA = −25°C 10 25°C 1 0.1 0.01 0.001 60 75°C VO = 5 V 0 1 2 3 4 VO = 0.2 V 1 TA = −25°C 75°C 25°C 0 6 7 8 9 10 Figure 36. Output Current vs. Input Voltage 100 10 5 Vin, INPUT VOLTAGE (VOLTS) Figure 35. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.4 f = 1 MHz IE = 0 V TA = 25°C 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) Figure 37. Input Voltage vs. Output Current http://onsemi.com 11 25 11 MUN2111T1 Series PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE F A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. L 3 S 2 DIM A B C D G H J K L S B 1 D G J C INCHES MIN MAX 0.1063 0.1220 0.0512 0.0669 0.0394 0.0511 0.0138 0.0196 0.0670 0.0826 0.0005 0.0040 0.0034 0.0070 0.0079 0.0236 0.0493 0.0649 0.0985 0.1181 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR K H MILLIMETERS MIN MAX 2.70 3.10 1.30 1.70 1.00 1.30 0.35 0.50 1.70 2.10 0.013 0.100 0.09 0.18 0.20 0.60 1.25 1.65 2.50 3.00 SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 12 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MUN2111T1/D