ONSEMI MJL21195

MJL21195, MJL21196
Silicon Power Transistors
The MJL21195 and MJL21196 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
•
•
•
•
•
•
•
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Total Harmonic Distortion Characterized
High DC Current Gain − hFE = 25 Min @ IC = 8 Adc
Excellent Gain Linearity
High SOA: 2.50 A, 80 V, 1 Second
Epoxy Meets UL 94, V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
These are Pb−Free Devices*
16 A COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 V, 200 W
MARKING DIAGRAM
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
250
Vdc
Collector−Base Voltage
VCBO
400
Vdc
Emitter−Base Voltage
VEBO
5
Vdc
Collector−Emitter Voltage − 1.5 V
VCEX
400
Vdc
Collector Current − Continuous
Collector Current − Peak (Note 1)
IC
16
30
Adc
Base Current − Continuous
IB
5
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
PD
200
1.43
W
W/°C
TJ, Tstg
− 65 to
+150
°C
Symbol
Max
Unit
RqJC
0.7
°C/W
Operating and Storage Junction
Temperature Range
MJL2119x
AYYWWG
TO−264
CASE 340G
STYLE 2
x
A
YY
WW
G
3
1
EMITTER
BASE
2 COLLECTOR
= 5 or 6
= Assembly Location
= Year
= Work Week
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
ORDERING INFORMATION
Package
Shipping†
MJL21195G
TO−264
(Pb−Free)
25 Units / Rail
MJL21196G
TO−264
(Pb−Free)
25 Units / Rail
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
June, 2010 − Rev. 4
1
Publication Order Number:
MJL21195/D
MJL21195, MJL21196
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
VCEO(sus)
250
−
−
Vdc
ICEO
−
−
100
mAdc
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
IEBO
−
−
100
mAdc
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
ICEX
−
−
100
mAdc
4.0
2.25
−
−
−
−
25
8.0
−
−
100
−
−
−
2.2
−
−
−
−
1.4
4
OFF CHARACTERISTICS (Note 2)
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
OFF CHARACTERISTICS (Note 3)
SECOND BREAKDOWN (Note 3)
IS/b
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (Nonrepetitive)
(VCE = 80 Vdc, t = 1 s (Nonrepetitive)
Adc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
hFE
Base−Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
Vdc
Vdc
DYNAMIC CHARACTERISTICS (Note 3)
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
(Matched pair hFE = 50 @ 5 A/5 V)
THD
hFE
unmatched
hFE
matched
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
%
−
0.8
−
−
0.08
−
fT
4
−
−
MHz
Cob
−
−
500
pF
PNP MJL21195
6.5
F T, CURRENT BANDWIDTH PRODUCT (MHz)
F T, CURRENT BANDWIDTH PRODUCT (MHz)
2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%.
6.0
VCE = 10 V
5.5
5.0
VCE = 5 V
4.5
4.0
3.5
TJ = 25°C
ftest = 1 MHz
3.0
2.5
2.0
0.1
1.0
10
NPN MJL21196
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
VCE = 10 V
VCE = 5 V
TJ = 25°C
ftest = 1 MHz
0.1
1.0
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
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2
10
MJL21195, MJL21196
TYPICAL CHARACTERISTICS
PNP MJL21195
NPN MJL21196
1000
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
1000
TJ = 100°C
100
25°C
-25°C
TJ = 100°C
100
25°C
-25°C
VCE = 20 V
VCE = 20 V
10
10
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
100
0.1
Figure 3. DC Current Gain, VCE = 20 V
Figure 4. DC Current Gain, VCE = 20 V
PNP MJL21195
NPN MJL21196
100
1000
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
1000
TJ = 100°C
100
25°C
-25°C
TJ = 100°C
100
25°C
-25°C
VCE = 5 V
VCE = 5 V
10
10
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
100
0.1
Figure 5. DC Current Gain, VCE = 5 V
PNP MJL21195
100
NPN MJL21196
30
IC , COLLECTOR CURRENT (A)
2.0 A
25
1.0
10
IC, COLLECTOR CURRENT (A)
Figure 6. DC Current Gain, VCE = 5 V
30
IC , COLLECTOR CURRENT (A)
1.0
10
IC, COLLECTOR CURRENT (A)
1.5 A
20
1.0 A
15
IB = 0.5 A
10
5.0
2.0 A
1.5 A
25
1.0 A
20
IB = 0.5 A
15
10
5.0
TJ = 25°C
TJ = 25°C
0
0
0
5.0
10
15
20
VCE, COLLECTOR−EMITTER VOLTAGE (V)
25
0
Figure 7. Typical Output Characteristics
5.0
10
15
20
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 8. Typical Output Characteristics
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3
25
MJL21195, MJL21196
TYPICAL CHARACTERISTICS
PNP MJL21195
NPN MJL21196
3.0
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
1.4
TJ = 25°C
IC/IB = 10
2.5
2.0
1.5
VBE(sat)
1.0
0.5
TJ = 25°C
IC/IB = 10
1.2
1.0
VBE(sat)
0.8
0.6
0.4
VCE(sat)
0.2
VCE(sat)
0
0
1.0
10
IC, COLLECTOR CURRENT (A)
100
1.0
10
IC, COLLECTOR CURRENT (A)
Figure 9. Typical Saturation Voltages
Figure 10. Typical Saturation Voltages
PNP MJL21195
NPN MJL21196
10
TJ = 25°C
1.0
VCE = 20 V
VCE = 5 V
0.1
0.1
0.1
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
0.1
1.0
10
100
100
10
TJ = 25°C
1.0
VCE = 20 V
VCE = 5 V
0.1
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Typical Base−Emitter Voltage
Figure 12. Typical Base−Emitter Voltage
100
IC , COLLECTOR CURRENT (AMPS)
100
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second breakdown.
10 ms
10
1 Sec
50 ms
1.0
250 ms
0.1
1.0
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 13. Active Region Safe Operating Area
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4
MJL21195, MJL21196
10000
10000
C, CAPACITANCE (pF)
Cib
1000
Cob
1000
TJ = 25°C
ftest = 1 MHz
TJ = 25°C
ftest = 1 MHz
100
Cob
100
0.1
1.0
10
100
0.1
1.0
10
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 14. MJL21195 Typical Capacitance
Figure 15. MJL21196 Typical Capacitance
1.2
1.1
T , TOTAL HARMONIC
HD
DISTORTION (%)
C, CAPACITANCE (pF)
Cib
1.0
0.9
0.8
0.7
0.6
10
100
1000
10000
100000
FREQUENCY (Hz)
Figure 16. Typical Total Harmonic Distortion
+50 V
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER
SOURCE
AMPLIFIER
50 W
DUT
0.5 W
0.5 W
DUT
-50 V
Figure 17. Total Harmonic Distortion Test Circuit
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5
8.0 W
100
MJL21195, MJL21196
PACKAGE DIMENSIONS
TO−3BPL (TO−264)
CASE 340G−02
ISSUE J
Q
0.25 (0.010)
−B−
M
T B
−T−
M
C
E
U
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
A
R
1
2
L
3
P
F 2 PL
K
W
G
J
H
D 3 PL
0.25 (0.010)
M
T B
S
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
U
W
MILLIMETERS
MIN
MAX
28.0
29.0
19.3
20.3
4.7
5.3
0.93
1.48
1.9
2.1
2.2
2.4
5.45 BSC
2.6
3.0
0.43
0.78
17.6
18.8
11.2 REF
4.35 REF
2.2
2.6
3.1
3.5
2.25 REF
6.3 REF
2.8
3.2
INCHES
MIN
MAX
1.102
1.142
0.760
0.800
0.185
0.209
0.037
0.058
0.075
0.083
0.087
0.102
0.215 BSC
0.102
0.118
0.017
0.031
0.693
0.740
0.411 REF
0.172 REF
0.087
0.102
0.122
0.137
0.089 REF
0.248 REF
0.110
0.125
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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For additional information, please contact your local
Sales Representative
MJL21195/D