MC74VHC125 Quad Bus Buffer with 3–State Control Inputs The MC74VHC125 is a high speed CMOS quad bus buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The MC74VHC125 requires the 3–state control input (OE) to be set High to place the output into the high impedance state. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7V, allowing the interface of 5V systems to 3V systems. • • • • • • • • • • • High Speed: tPD = 3.8ns (Typ) at VCC = 5V Low Power Dissipation: ICC = 4µA (Max) at TA = 25°C High Noise Immunity: VNIH = VNIL = 28% VCC Power Down Protection Provided on Inputs Balanced Propagation Delays Designed for 2V to 5.5V Operating Range Low Noise: VOLP = 0.8V (Max) Pin and Function Compatible with Other Standard Logic Families Latchup Performance Exceeds 300mA ESD Performance: HBM > 2000V; Machine Model > 200V Chip Complexity: 72 FETs or 18 Equivalent Gates http://onsemi.com 14–LEAD SOIC D SUFFIX CASE 751A 14–LEAD SOIC EIAJ M SUFFIX CASE 965 PIN CONNECTION AND MARKING DIAGRAM (Top View) A1 OE1 A2 OE2 A3 OE3 A4 OE4 5 6 8 VCC A1 2 13 OE4 12 A4 4 11 Y4 A2 5 10 OE3 Y2 6 9 A3 GND 7 8 Y3 For detailed package marking information, see the Marking Diagram section on page 5 of this data sheet. Y2 4 9 14 3 Y1 1 1 Y1 Active–Low Output Enables 3 OE1 OE2 LOGIC DIAGRAM 2 14–LEAD TSSOP DT SUFFIX CASE 948G Y3 ORDERING INFORMATION 10 12 11 Device Y4 Package Shipping SOIC 55 Units/Rail MC74VHC125DT TSSOP 96 Units/Rail MC74VHC125M SOIC EIAJ 50 Units/Rail MC74VHC125D 13 FUNCTION TABLE VHC125 Inputs OE Y H L X L L H H L Z Semiconductor Components Industries, LLC, 2000 April, 2000 – Rev. 2 Output A 1 Publication Order Number: MC74VHC125/D MC74VHC125 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS* Symbol Value Unit DC Supply Voltage – 0.5 to + 7.0 V Vin DC Input Voltage – 0.5 to + 7.0 V Vout DC Output Voltage – 0.5 to VCC + 0.5 V IIK Input Diode Current – 20 mA IOK Output Diode Current ± 20 mA Iout DC Output Current, per Pin ± 25 mA ICC DC Supply Current, VCC and GND Pins ± 50 mA PD Power Dissipation in Still Air, 500 450 mW Tstg Storage Temperature – 65 to + 150 _C VCC Parameter SOIC Packages† TSSOP Package† This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND (Vin or Vout) VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V CC ). Unused outputs must be left open. v v * Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. †Derating — SOIC Packages: – 7 mW/_C from 65_ to 125_C TSSOP Package: – 6.1 mW/_C from 65_ to 125_C ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter DC Supply Voltage Min Max Unit 2.0 5.5 V Vin DC Input Voltage 0 5.5 V Vout DC Output Voltage 0 VCC V – 40 + 85 _C 0 0 100 20 ns/V TA Operating Temperature, All Package Types tr, tf Input Rise and Fall Time VCC = 3.3V ±0.3V VCC =5.0V ±0.5V DC ELECTRICAL CHARACTERISTICS VCC Symbol Parameter Test Conditions Min 1.5 2.1 3.15 3.85 VIH Minimum High–Level Input Voltage 2.0 3.0 4.5 5.5 VIL Maximum Low–Level Input Voltage 2.0 3.0 4.5 5.5 VOH Minimum High–Level Output Voltage VIN = VIH or VIL VOL IOZ Maximum Low–Level Output Voltage VIN = VIH or VIL Maximum 3–State Leakage Current TA ≤ 85°C TA = 25°C (V) Typ Max Min 1.5 2.1 3.15 3.85 0.5 0.9 1.35 1.65 VIN = VIH or VIL IOH = –50µA 2.0 3.0 4.5 1.9 2.9 4.4 VIN = VIH or VIL IOH = –4mA IOH = –8mA 3.0 4.5 2.58 3.94 VIN = VIH or VIL IOL = 50µA 2.0 3.0 4.5 VIN = VIH or VIL IOL = 4mA IOL = 8mA Max 2.0 3.0 4.5 TA ≤ 125°C Min Max 1.5 2.1 3.15 3.85 0.5 0.9 1.35 1.65 V 0.5 0.9 1.35 1.65 1.9 2.9 4.4 1.9 2.9 4.4 2.48 3.80 2.34 3.66 Unit V V V 0.0 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 3.0 4.5 0.36 0.36 0.44 0.44 0.52 0.52 5.5 ±0.25 ±2.5 ±2.5 V V VIN = VIH or VIL VOUT = VCC or GND http://onsemi.com 2 µA MC74VHC125 IIN Maximum Input Leakage Current VIN = 5.5V or GND 0 to 5.5 ±0.1 ±1.0 ±1.0 µA ICC Maximum Quiescent Supply Current VIN = VCC or GND 5.5 4.0 40 40 µA ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns) TA = 25°C Symbol tPLH, tPHL tPZL, tPZH tPLZ, tPHZ tOSLH, tOSHL Cin Cout Parameter Test Conditions Min TA = ≤ 85°C TA = ≤ 125°C Typ Max Min Max Min Max Unit ns Maximum Propagation Delay, A to Y VCC = 3.3 ± 0.3V CL = 15pF CL = 50pF 5.6 8.1 8.0 11.5 1.0 1.0 9.5 13.0 1.0 1.0 12.0 16.0 VCC = 5.0 ± 0.5V CL = 15pF CL = 50pF 3.8 5.3 5.5 7.5 1.0 1.0 6.5 8.5 1.0 1.0 8.5 10.5 Maximum Output Enable TIme, OE to Y VCC = 3.3 ± 0.3V RL = 1kΩ CL = 15pF CL = 50pF 5.4 7.9 8.0 11.5 1.0 1.0 9.5 13.0 1.0 1.0 11.5 15.0 VCC = 5.0 ± 0.5V RL = 1kΩ CL = 15pF CL = 50pF 3.6 5.1 5.1 7.1 1.0 1.0 6.0 8.0 1.0 1.0 7.5 9.5 Maximum Output Disable Time, OE to Y VCC = 3.3 ± 0.3V RL = 1kΩ CL = 50pF 9.5 13.2 1.0 15.0 1.0 18.0 VCC = 5.0 ± 0.5V RL = 1kΩ CL = 50pF 6.1 8.8 1.0 10.0 1.0 12.0 Output–to–Output Skew VCC = 3.3 ± 0.3V (Note 1.) CL = 50pF 1.5 1.5 1.5 VCC = 5.0 ± 0.5V (Note 1.) CL = 50pF 1.0 1.0 1.0 10 10 10 Maximum Input Capacitance 4 Maximum Three–State Output Capacitance (Output in High Impedance State) 6 ns ns ns pF pF Typical @ 25°C, VCC = 5.0V CPD Power Dissipation Capacitance (Note 2.) pF 14 1. Parameter guaranteed by design. tOSLH = |tPLHm – tPLHn|, tOSHL = |tPHLm – tPHLn|. 2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 4 (per buffer). CPD is used to determine the no–load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50pF, VCC = 5.0V) TA = 25°C Symbol Characteristic Typ Max Unit VOLP Quiet Output Maximum Dynamic VOL 0.3 0.8 V VOLV Quiet Output Minimum Dynamic VOL – 0.3 – 0.8 V VIHD Minimum High Level Dynamic Input Voltage 3.5 V VILD Maximum Low Level Dynamic Input Voltage 1.5 V http://onsemi.com 3 MC74VHC125 SWITCHING WAVEFORMS OE VCC 50% VCC GND 50% A tPZL tPLZ GND tPHL tPLH HIGH IMPEDANCE 50% VCC Y 50% VCC VOL + 0.3V tPZH tPHZ Y Figure 1. Figure 2. TEST POINT TEST POINT OUTPUT DEVICE UNDER TEST VOH – 0.3V HIGH IMPEDANCE 50% VCC Y DEVICE UNDER TEST CL* *Includes all probe and jig capacitance OUTPUT 1 kΩ CL * CONNECT TO VCC WHEN TESTING tPLZ AND tPZL. CONNECT TO GND WHEN TESTING tPHZ AND tPZH. *Includes all probe and jig capacitance Figure 3. Test Circuit Figure 4. Test Circuit INPUT Figure 5. Input Equivalent Circuit http://onsemi.com 4 MC74VHC125 MARKING DIAGRAMS (Top View) 14 13 12 11 10 9 14 13 12 11 10 8 3 4 6 7 125 AWLYWW* 2 8 VHC VHC125 1 9 ALYW* 5 6 7 1 2 14–LEAD SOIC D SUFFIX CASE 751A 3 4 5 14–LEAD TSSOP DT SUFFIX CASE 948G 14 13 12 11 10 9 8 6 7 VHC125 AWLYWW* 1 2 3 4 5 14–LEAD SOIC EIAJ M SUFFIX CASE 965 *See Applications Note #AND8004/D for date code and traceability information. http://onsemi.com 5 MC74VHC125 PACKAGE DIMENSIONS D SUFFIX PLASTIC SOIC PACKAGE CASE 751A–03 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. –A– 14 8 P 7 PL –B– 1 0.25 (0.010) 7 G 0.25 (0.010) T M F J M K D 14 PL M R X 45° C SEATING PLANE B M B S A S DIM A B C D F G J K M P R MILLIMETERS MIN MAX 8.75 8.55 4.00 3.80 1.75 1.35 0.49 0.35 1.25 0.40 1.27 BSC 0.25 0.19 0.25 0.10 7° 0° 6.20 5.80 0.50 0.25 INCHES MIN MAX 0.337 0.344 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 7° 0° 0.228 0.244 0.010 0.019 DT SUFFIX PLASTIC TSSOP PACKAGE CASE 948G–01 ISSUE O 14X K REF 0.10 (0.004) 0.15 (0.006) T U M T U V S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE –W–. S S N 2X 14 L/2 0.25 (0.010) 8 M B –U– L PIN 1 IDENT. F 7 1 0.15 (0.006) T U N S DETAIL E K A –V– ÇÇÇ ÉÉ ÇÇÇ ÉÉ K1 J J1 SECTION N–N –W– C 0.10 (0.004) –T– SEATING PLANE D G H DETAIL E http://onsemi.com 6 DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 ––– 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.50 0.60 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 ––– 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.020 0.024 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ MC74VHC125 PACKAGE DIMENSIONS M SUFFIX PLASTIC SOIC EIAJ PACKAGE CASE 965–01 ISSUE O 14 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS AND ARE MEASURED AT THE PARTING LINE. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 5. THE LEAD WIDTH DIMENSION (b) DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE LEAD WIDTH DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. MINIMUM SPACE BETWEEN PROTRUSIONS AND ADJACENT LEAD TO BE 0.46 ( 0.018). LE 8 Q1 E HE L 7 1 M_ DETAIL P Z D VIEW P A e c A1 b 0.13 (0.005) M 0.10 (0.004) http://onsemi.com 7 DIM A A1 b c D E e HE 0.50 LE M Q1 Z MILLIMETERS MIN MAX ––– 2.05 0.05 0.20 0.35 0.50 0.18 0.27 9.90 10.50 5.10 5.45 1.27 BSC 7.40 8.20 0.50 0.85 1.10 1.50 10 _ 0_ 0.70 0.90 ––– 1.42 INCHES MIN MAX ––– 0.081 0.002 0.008 0.014 0.020 0.007 0.011 0.390 0.413 0.201 0.215 0.050 BSC 0.291 0.323 0.020 0.033 0.043 0.059 10 _ 0_ 0.028 0.035 ––– 0.056 MC74VHC125 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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