MBRB1045, MBRD1045 Preferred Device SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 45 VOLTS Features • • • • • • Guardring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Short Heat Sink Tab Manufactured − Not Sheared! Pb−Free Packages are Available 1 4 3 MARKING DIAGRAM 4 Mechanical Characteristics: • Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 • Weight: 1.7 grams for D2PAK (approximately) • • • • MBRB1045G AKA 1 3 0.4 grams for DPAK (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL1 Requirements ESD Ratings: Machine Model, C (>400 V) Human Body Model, 3B (>8000 V) D2PAK CASE 418B PLASTIC A Y WW MBRB1045 G AKA MAXIMUM RATINGS Rating 4 Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR) TC = 135°C IF(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 135°C IFRM 20 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 (MBRB) 70 (MBRD) A TJ, Tstg −65 to +175 °C Operating Junction and Storage Temperature Range (Note 1) Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 6 1 2 3 Voltage Rate of Change (Rated VR) dv/dt 10000 V/s Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA. 1 AY WW DPAK CASE 369C Y WW B1045 G = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity MARKING DIAGRAM YWW B10 45G = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBRB1045/D MBRB1045, MBRD1045 THERMAL CHARACTERISTICS Characteristic Symbol Value RJC RJA RJC RJA 1.0 50 2.43 68 Symbol Value Unit °C/W Thermal Resistance, (MBRB1045) − Junction−to−Case (Note 2) − Junction−to−Ambient (Note 2) (MBRD1045) − Junction−to−Case (Note 2) − Junction−to−Ambient (Note 2) 2. When mounted using minimum recommended pad size on FR−4 board. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 3) (IF = 10 Amps, TJ = 125°C) (IF = 20 Amps, TJ = 125°C) (IF = 20 Amps, TJ = 25°C) VF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) IR Unit V 0.57 0.72 0.84 mA 15 0.1 3. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0% ORDERING INFORMATION Package Shipping† D2PAK 50 Units / Rail MBRB1045G D2PAK (Pb−Free) 50 Units / Rail MBRB1045T4 D2PAK 800 Units / Tape & Reel MBRB1045T4G D2PAK (Pb−Free) 800 Units / Tape & Reel MBRD1045T4G DPAK (Pb−Free) 2500 Units / Tape & Reel Device MBRB1045 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MBRB1045, MBRD1045 100 100 TJ = 150°C TJ = 150°C 70 100°C 50 30 30 20 20 10 7.0 5.0 3.0 2.0 1.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.7 0.5 0.5 0.3 0.3 0.2 0.2 0.1 25°C 100°C 50 25°C iF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) 70 0.1 0.2 0.4 0.6 0.8 1.0 1.4 1.2 0.2 0.4 0.6 0.8 1.0 1.2 vF, INSTANTANEOUS VOLTAGE (VOLTS) vF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage http://onsemi.com 3 1.4 MBRB1045, MBRD1045 100 100 125°C 10 IR , REVERSE CURRENT (mA) IR , REVERSE CURRENT (mA) TJ = 150°C 100°C 1.0 75°C 0.1 25°C 150°C 10 125°C 1.0 100°C 75°C 0.1 0.01 0.01 25°C 0.001 0.001 0 10 5.0 15 20 25 30 35 40 45 0 50 15 25 20 30 35 40 45 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Maximum Reverse Current Figure 4. Typical Reverse Current 50 1400 1200 C, CAPACITANCE (pF) IFSM , PEAK HALF−WAVE CURRENT (AMPS) 10 VR, REVERSE VOLTAGE (VOLTS) 200 100 70 50 1000 30 800 600 400 200 0 20 2.0 3.0 5.0 7.0 10 20 30 50 0 70 100 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Maximum Surge Capability Figure 5. Typical Capacitance 18 RATED VOLTAGE APPLIED 16 14 dc 12 SQUARE WAVE 10 8.0 6.0 4.0 2.0 0 130 10 NUMBER OF CYCLES AT 60 Hz PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS) 1.0 IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 5.0 135 140 145 150 155 TC, CASE TEMPERATURE (°C) 50 10 9.0 dc 8.0 7.0 SQUARE WAVE 6.0 5.0 4.0 3.0 2.0 1.0 0 0 Figure 6. Current Derating, Case, RJC = 1.0 °C/W 2.0 4.0 6.0 8.0 10 12 14 16 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 7. Forward Power Dissipation http://onsemi.com 4 18 MBRB1045, MBRD1045 PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 −T− SEATING PLANE K W J G D H 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE M T B M N R L M P U L L M M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 8.38 0.33 1.016 0.04 10.66 0.42 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 MBRB1045, MBRD1045 PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369C ISSUE O −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− T SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. 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