BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. http://onsemi.com Features •DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc •Pb-Free Packages are Available* MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO 80 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 10 Adc Base Current IB 6.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 90 720 W W/°C TJ, Tstg -55 to +150 °C Operating and Storage Junction Temperature Range 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS 1 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Symbol Max Unit qJC 1.39 °C/W 2 TO-220AB CASE 221A-09 STYLE 1 3 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM BD8xxG AY WW BD8xx = A Y WW G = = = = Device Code x = 09 or 10 Assembly Location Year Work Week Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 November, 2007 - Rev. 4 1 Publication Order Number: BD809/D BD809 (NPN), BD810 (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Collector-Emitter Sustaining Voltage (Note 1) (IC = 0.1 Adc, IB = 0) Min Max Unit - Vdc 80 - 1.0 - 2.0 30 15 - BVCEO Collector Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO DC Current Gain (IC = 2.0 A, VCE = 2.0 V) (IC = 4.0 A, VCE = 2.0 V) hFE mAdc mAdc Collector-Emitter Saturation Voltage (Note 1) (IC = 3.0 Adc, IB = 0.3 Adc) VCE(sat) - 1.1 Vdc Base-Emitter On Voltage (Note 1) (IC = 4.0 Adc, VCE = 2.0 Vdc) VBE(on) - 1.6 Vdc fT 1.5 - MHz Current-Gain Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) 1. Pulse Test: Pulse Width x 300 ms, Duty Cycle x 2.0%. 1 ms 5 ms 10 3 .5 ms 1 ms PD, POWER DISSIPATION (WATTS) IC, COLLECTOR CURRENT (AMP) 90 dc 1 0.3 0.1 1 3 10 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 80 70 60 50 40 30 20 10 0 100 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (°C) Figure 1. Active Region DC Safe Operating Area (see Note 1) Figure 2. Power-Temperature Derating Curve http://onsemi.com 2 BD809 (NPN), BD810 (PNP) NPN BD809 PNP BD810 500 500 TJ = 150°C 100 -55°C 50 20 VCE = 2.0 V 10 5.0 0.2 0.5 TJ = 150°C 200 25°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 200 25°C 100 -55°C 50 20 10 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 5.0 20 VCE = 2.0 V 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 20 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 2.0 TJ = 25°C 1.8 1.6 1.4 1.2 1.0 IC = 1.0 A 0.8 4.0 A 8.0 A 0.6 0.4 0.2 0 5.0 10 20 50 100 200 500 1000 IB, BASE CURRENT (mA) 2000 5000 2.0 TJ = 25°C 1.8 1.6 1.4 1.2 IC = 1.0 A 1.0 4.0 A 8.0 A 0.8 0.6 0.4 0.2 0 5.0 10 20 50 100 200 500 1000 IB, BASE CURRENT (mA) 2000 5000 Figure 4. Collector Saturation Region 2.8 2.8 V, VOLTAGE (VOLTS) 2.0 1.6 1.2 VBE(sat) = IC/IB = 10 0.8 2.0 1.6 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 2.0 V 0.4 TJ = 25°C 2.4 V, VOLTAGE (VOLTS) TJ = 25°C 2.4 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0 VCE(sat) @ IC/IB = 10 0 0.2 0.5 1.0 2.0 5.0 10 20 0.2 IC, COLLECTOR CURRENT (AMP) 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) Figure 5. “On” Voltages http://onsemi.com 3 10 20 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE BD809 (NPN), BD810 (PNP) 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.07 0.05 0.1 qJC(t) = r(t) qJC 0.02 0.03 0.02 0.01 0.01 SINGLE P(pk) PULSE 0.05 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) SINGLE PULSE 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, PULSE WIDTH (ms) 20 30 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 300 500 1000 Figure 6. Thermal Response Note 1: The data of Figure 1 is based on T J(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150°C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. ORDERING INFORMATION Device BD809 BD809G BD810 BD810G Package Shipping† TO-220 TO-220 (Pb-Free) 50 Units / Rail TO-220 TO-220 (Pb-Free) 50 Units / Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 BD809 (NPN), BD810 (PNP) PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AE -TB SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 http://onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BD809/D