NEW PRODUCT DDC144TU DUAL NPN TRANSISTORS WITH 47K OHM BASE RESISTOR General Description • DDC144TU is best suited for logic switching applications using control circuits like micro-controllers, comparators, etc. It features two discrete NPN transistors which can support maximum continuous current of 100 mA. NPN transistors can be used as a control and also these can be biased using higher supply voltages due to the built in current limiting base resistor of 47 K Ohm. The component devices can be used as a part of a circuit or as a stand alone discrete device. Fig. 1: SOT-363 Features • • • • BQ2 CQ1 Built in Base Resistors Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Mechanical Data • • • • • • • • EQ2 47k R2 DDC144T_DIE Case: SOT-363 Case Material: Molded Plastic. "Green Molding" Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Fig. 2 Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Page 5 Ordering Information: See Page 5 Weight: 0.015 grams (approximate) Q2 DDC144T_DIE Q1 R1 47k BQ1 EQ1 CQ2 Fig. 2: Schematic and Pin Configuration Sub-Component P/N DDTC144T_DIE DDTC144T_DIE Maximum Ratings: Total Device Reference Q1 Q2 Device Type NPN NPN R1 (NOM) 47KΩ ⎯ R2 (NOM) ⎯ 47KΩ Figure 2 2 @TA = 25°C unless otherwise specified Characteristic Power Dissipation Power Deration above 25°C Output Current Symbol Pd Value 200 Unit mW Pder 1.6 Iout 100 mW / °C mA Thermal Characteristics Characteristic Junction Operation and Storage Temperature Range Thermal Resistance, junction to ambient (packaged device) (Ref: equivalent to only one heated junction) @ TA = 25°C Notes: Symbol TJ, TSTG Value -55 to +150 Unit °C RθJA 625 °C/W 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1" x 0.85" x 0.062"; pad layout as shown on Page 5 or see Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http:/www.diodes.com/datasheets/ap02001.pdf. DS30767 Rev. 6 - 2 1 of 6 www.diodes.com DDC144TU © Diodes Incorporated NEW PRODUCT Maximum Ratings: Sub-Component Device: Discrete NPN Transistor (Q1, Q2) Characteristic Collector-Base Voltage @TA = 25°C unless otherwise specified Symbol VCBO Value 50 Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6 V Collector Current (dc) IC(max) 50 mA Electrical Characteristics Unit V @TA = 25°C unless otherwise specified Characteristic Off Characteristics Collector-Base Cut Off Current Collector-Emitter Cut Off Current, IO(OFF) Emitter-Base Cut Off Current Symbol Min Typ Max Unit ICBO ⎯ ⎯ 100 nA VCB = 50V, IE = 0 ICEO ⎯ ⎯ 500 nA VCE = 50V, IB = 0 IEBO ⎯ 500 nA VEB = 5V, IC = 0 ⎯ ⎯ V IC = 50uA, IE = 0 Collector-Base Breakdown Voltage V(BR)CBO ⎯ 50 Collector-Emitter Breakdown Voltage Test Condition V(BR)CEO 50 ⎯ ⎯ V IC = 1 mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6 ⎯ V IE = 50uA, IC = 0 Output Voltage (Transistor is off) VOH 4.6 ⎯ 4.45 Input Voltage (load is off) VI(OFF) ⎯ 0.6 ⎯ 0.4 Output Current (leakage same as ICEO) On Characteristics* IO(OFF) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 150 Collector-Emitter Saturation Voltage DC Current Gain Output Voltage (equivalent to VCE(SAT) or VO(on)) Input Voltage B V VCC = 5V, VB = 0.05V, RL = 1KΩ VCE = 5V, IC = 100uA 850 ⎯ nA 0.03 0.1 V IC = 2.5 mA, IB = 0.25 mA 0.075 0.1 V IC = 10mA, IB = 0.5mA 0.05 0.1 V IC = 10mA, IB = 1mA 0.2 0.3 V IC = 50mA, IB= 5mA 400 ⎯ ⎯ VCE = 5V, IC = 1 mA 150 400 ⎯ ⎯ VCE = 5V, IC = 10 mA 150 350 ⎯ ⎯ VCE = 5V, IC = 25 mA 150 50 300 110 ⎯ ⎯ Vdc VCE = 5V, IC = 50 mA VCE = 5V, IC = 100 mA VCC = 5V, VB = 2.5V, RL=10KΩ VI(ON) ⎯ 1.5 ⎯ ⎯ 0.25 0.95 Vdc VO= 0.3V, IC= 2mA VCE(SAT) hFE VOL 0.2 B VCC = 50V, VI = 0V B B B B B Ii ⎯ 19.2 ⎯ 28 mA VI = 5V Base-Emitter Turn-on Voltage VBE(ON) ⎯ ⎯ 1.2 V VCE = 5V, IC = 2mA Base-Emitter Saturation Voltage Input Resistor +/- 30% (Base) Small Signal Characteristics Transition Frequency (gain-bandwidth product) VBE(SAT) R1 ⎯ ⎯ ⎯ 47 1.6 ⎯ V KΩ IC = 200uA, IB = 20uA ⎯ fT ⎯ 250 VCE = 10V, IE = 5mA, f =100MHz ⎯ ⎯ ⎯ 5 MHz CC pF VCB = 10V, IE = 0, f = 1MHz Input Current Collector Capacitance, (Ccbo-Output Capacitance) B NEW PRODUCT *Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02 DS30767 Rev. 6 - 2 2 of 6 www.diodes.com DDC144TU © Diodes Incorporated 35 Pd, POWER DISSIPATION (mW) Pd, POWER DISSIPATION (mW) 200 150 100 50 30 25 20 15 10 5 0 0 25 0 50 75 100 125 150 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 100 75 50 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 4 Power Derating for Nominal Operation TA125 = 125 TA = °C °C TA = 85° C 25 0 175 TA, AMBIENT TEMPERATURE (°C) Fig. 3 Maximum Power Derating Curve TA = 25°C TA = 25°C TA = 85°C TA = 125°C TA = 150°C TA = -55°C IC, COLLECTOR CURRENT (mA) Fig. 6 DC Current Gain COLLECTOR EMITTER SATURATION VOLTAGE (V) IB = 4.5mA 100 IB = 5mA IB = 4mA IB = 3.5mA IB = 3mA IB = 2.5mA IB = 1.5mA VCE(SAT), IB = 1mA IB = 0.5mA 10 1 0.1 TA = 150°C TA = 125°C TA = -55°C 0.01 TA = 85°C 0.1 TA = 25°C 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 8 VCE(SAT) vs IC VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 7 IC vs. VCE DS30767 Rev. 6 - 2 TA = -55°C TA = 150°C IC, COLLECTOR CURRENT (mA) Fig. 5 DC Current Gain IC, COLLECTOR CURRENT (A) NEW PRODUCT 250 3 of 6 www.diodes.com DDC144TU © Diodes Incorporated VBE, BASE-EMITTER VOLTAGE (V) NEW PRODUCT TA = -55° C TA = 85° C T A = 125°C TA = 25°C TA = 150°C TA = 125°C T A = 150°C TA = 85°C 0.1 10 1 100 1 IC, COLLECTOR CURRENT (mA) Fig. 10 VBE(SAT) vs IC IC, COLLECTOR CURRENT (mA) Fig. 9 VBE vs IC T A = 150 °C T A = 25 °C TA = -55° C TA = 85° C IC, COLLECTOR CURRENT (mA) Fig. 11 Input Voltage vs Output Current DS30767 Rev. 6 - 2 4 of 6 www.diodes.com DDC144TU © Diodes Incorporated Marking Code N21 Device DDC144TU-7 Notes: 4. Packaging SOT-363 Shipping 3000/Tape & Reel For Packaging Details, please see below or go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information N21 = Product Type Marking Code YM = Date Code Marking Y = Year e.g., U = 2007 M = Month e.g., 9 = September N21 YM NEW PRODUCT Ordering Information (Note 4) N21 YM Fig. 12 Date Code Key Year 2006 T Code 2007 U 2008 V 2009 W 2010 X Month Jan Feb Mar Apr May Jun Jul Code 1 2 3 4 5 6 7 Aug 8 2011 Y Sep 9 Oct O 2012 Z Nov N Dec D Mechanical Details SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J – 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 0° 8° α All Dimensions in mm A B C H K M J D F L Fig. 13 Suggested Pad Layout: (Based on IPC-SM-782) E Z E Figure 14 SOT-363 Dimensions Z 2.5 G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65 All Dimensions in mm C G Y X Fig. 14 DS30767 Rev. 6 - 2 5 of 6 www.diodes.com DDC144TU © Diodes Incorporated NEW PRODUCT IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30767 Rev. 6 - 2 6 of 6 www.diodes.com DDC144TU © Diodes Incorporated