DCX4710H 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS General Description • DCX4710H is best suited for applications where the load needs to be turned on and off using micro-controllers, comparators or other control circuits, particularly at a point of load. It features a discrete pre-biased PNP transistor which can support continuous maximum current of 100 mA. It also contains a pre-biased NPN transistor which can be used as a control and can be biased using a higher supply. The component devices can be used as a part of circuit or as stand alone discrete devices. 4 5 6 3 2 1 Features • • • • • SOT-563 Built in Biasing Resistors Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Mechanical Data • • • • • • • • Case: SOT-563 Case Material: Molded Plastic. "Green Molding" Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Fig. 2 Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Page 7 Ordering Information: See Page 7 Weight: 0.005 grams (approximate) Schematic and Pin Configuration Reference Device Type R1 (NOM) R2 (NOM) R3 (NOM) R4 (NOM) Q1 PNP 10KΩ 47KΩ ⎯ ⎯ Q2 NPN ⎯ ⎯ 10KΩ 10KΩ Maximum Ratings: Total Device @TA = 25°C unless otherwise specified Characteristic Output Current Power Dissipation (Note 3) Power Derating Factor above 45°C Junction Operation and Storage Temperature Range Thermal Resistance, Junction to Ambient Air (Note 3) (Equivalent to one heated junction of PNP transistor) @ TA = 25°C Notes: Symbol Value Unit Iout 100 mA Pd 150 mW Pder 1.43 mW/°C Pd -55 to +150 °C RθJA 833 °C/W 1. No purposefully added lead. 2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; as per Diodes Inc. suggested pad layout document AP02001 on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30871 Rev. 6 - 2 1 of 7 www.diodes.com DCX4710H © Diodes Incorporated Sub-Component Device – Pre-Biased PNP Transistor (Q1) Characteristic @TA = 25°C unless otherwise specified Symbol VCBO Value -50 Unit V Collector-Emitter Voltage VCEO -50 V Supply Voltage VCC -50 V Input Voltage VIN +6 to -40 V IC(max) -100 mA Collector-Base Voltage Output Current (dc) Sub-Component Device – Pre-Biased NPN Transistor (Q2) Characteristic @TA = 25°C unless otherwise specified Symbol VCBO Value 50 Unit V Collector-Emitter Voltage VCEO 50 V Supply Voltage VCC 50 V Input Voltage VIN -10 to +40 V IC(max) 100 mA Collector-Base Voltage Output Current (dc) Electrical Characteristics: Pre-Biased PNP Transistor (Q1) @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Collector-Base Cut Off Current Symbol Min Typ Max Unit ICBO -100 nA VCB = -50V, IE = 0 V(BR)CBO V(BR)CEO ⎯ -50 -50 ⎯ Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage V V IC = -10μA, IE = 0 IC = -4mA, IB = 0 Input Off Voltage VI(OFF) ⎯ ⎯ ⎯ ⎯ -0.3 V VCE = -5V, IC = -100μA Output Off Current ON CHARACTERISTICS DC Current Gain Collector-Emitter Saturation Voltage IO(OFF) ⎯ ⎯ -0.5 μA VCC = -50V, VI = 0V hFE 80 ⎯ ⎯ ⎯ V Output On Voltage VO(ON) -0.3 V IO/II = -10mA/-0.5mA Input On Voltage (Load is present) VI(ON) ⎯ -1.4 ⎯ -0.1 ⎯ -0.25 VCE = -5V, IC = -5mA VCE(sat) VO = -0.3V, IC = -2mA ⎯ 7 32 20 ⎯ 10 47 ⎯ ⎯ -0.88 13 62 20 V II ΔR1 R2 Δ(R2/R1) mA KΩ KΩ % VI = -5V ⎯ 250 ⎯ MHz VCE = -10V, IE = -5mA, f = 100MHz Input Current Input Resistor +/- 30% (Base) Pull-up Resistor (Base to Vcc supply) Resistor Ratio SMALL SIGNAL CHARACTERISTICS Transition Frequency (gain bandwidth product) fT -0.9 Test Condition B IC = -10mA, IB = -0.3mA B ⎯ ⎯ ⎯ *Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02 DS30871 Rev. 6 - 2 2 of 7 www.diodes.com DCX4710H © Diodes Incorporated Pre-Biased NPN Transistor (Q2) @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Collector-Base Cut Off Current Symbol Min Typ Max Unit Test Condition ICBO 100 nA VCB = 50V, IE = 0 V(BR)CBO ⎯ 50 ⎯ Collector-Base Breakdown Voltage ⎯ ⎯ V IC = 10μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 50 IC = 2mA, IB = 0 VI(OFF) ⎯ ⎯ 0.5 V Input Off Voltage ⎯ 1.2 V VCE = 5V, IC = 100μA Output Current ON CHARACTERISTICS DC Current Gain Collector-Emitter Saturation Voltage IO(OFF) ⎯ ⎯ 0.5 μA VCC = 50V, VI = 0V ⎯ 0.25 ⎯ V IC = -10mA, IB = -0.3mA 0.3 V IO/II = 10mA/0.5mA B hFE 35 ⎯ VCE(sat) ⎯ Output On Voltage Input On Voltage VO(ON) VI(ON) ⎯ 3 ⎯ 0.1 1.6 Input Current Input Resistor +/- 30% (Base) Resistor Ratio SMALL SIGNAL CHARACTERISTICS II R1 (R2/R1) ⎯ 7 0.8 ⎯ 10 1 ⎯ 0.88 13 1.2 mA KΩ ⎯ VI = 5V fT ⎯ 250 ⎯ MHz VCE = 10V, IE = 5mA, f = 100MHz Transition Frequency (Gain bandwidth product) V VCE = 5V, IC = 5mA B VO = 0.3V, IC = 2mA ⎯ ⎯ *Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02 @Tamb = 25°C unless otherwise specified PD, POWER DISSIPATION (mW) Typical Characteristics 0 0 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve (Note 3) Notes: 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; as per Diodes Inc. suggested pad layout document AP02001 on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30871 Rev. 6 - 2 3 of 7 www.diodes.com DCX4710H © Diodes Incorporated Characteristics Curves of PNP Transistor (Q1) @Tamb = 25°C unless otherwise specified 0.1 400 lb = 1.75mA VCE = 5V lb = 1.5mA TA = 150°C 350 lb = 1.25mA 0.08 lb = 2mA hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) 0.09 lb = 2.25mA 0.07 0.06 lb = 0.5mA 0.05 0.04 lb = 0.25mA 0.03 lb = 0.75mA 0.02 TA = 125°C 300 TA = 85°C 250 TA = 25°C 200 150 TA = -55° C 100 lb = 1mA 50 0.01 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.1 T A = 150°C TA = -55° C 0.1 DS30871 Rev. 6 - 2 VCE(SAT), COLLECTOR VOLTAGE (V) VCE(SAT), COLLECTOR VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 2 VCE vs. IC TA = 125°C TA = 25°C TA = 150°C T A = -55 °C TA = 85°C 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4 IC vs. VCE(SAT) 1000 0.1 4 of 7 www.diodes.com 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3 DC Current Gain vs. IC 1000 TA = 125°C TA = 25°C T A = 85°C 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 IC vs. VCE(SAT) 1000 DCX4710H © Diodes Incorporated T A = 125° C TA = 25° C TA = 85° C TA = 150° C TA = -55° C IC, OUTPUT CURRENT (mA) Fig. 6 Input Voltage vs. Collector Current Characteristics Curves of NPN Transistor (Q2) @Tamb = 25°C unless otherwise specified 0.1 lb = 1.5mA VCE = 5V 0.09 IC, COLLECTOR CURRENT (A) hFE, DC CURRENT GAIN TA = 150° C TA = 125° C TA = 85° C T A = 25° C TA = -55° C lb = 2mA lb = 1.75mA lb = 1.25mA 0.08 0.07 0.06 lb = 0.5mA 0.05 0.04 lb = 0.25mA 0.03 lb = 0.75mA 0.02 lb = 1mA 0.01 0.1 DS30871 Rev. 6 - 2 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 DC Current Gain vs. IC 0 1000 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 8 VCE vs. IC 5 of 7 www.diodes.com DCX4710H © Diodes Incorporated VCE(SAT), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(SAT), COLLECTOR EMITTER SATURATION VOLTAGE (V) TA = 150° C TA = 125° C T A = -55° C 1 0.1 T A = 150 ° C T A = 125° C TA = -55° C TA = 85° C TA = 25° C 10 100 1000 0.1 IC, COLLECTOR CURRENT (mA) Fig. 9 IC vs. VCE(SAT) 1 TA = 25° C 10 T A = 85 ° C 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 10 IC vs. VCE(SAT) VI(ON), INPUT VOLTAGE (V) VCE = 0.3V TA = 125° C T A = 25° C TA = 85° C T A = -55° C TA = 150° C 0.1 DS30871 Rev. 6 - 2 1 10 IC, COLLECTOR CURRENT (mA) Fig. 11 Input Voltage vs. Output Current 100 6 of 7 www.diodes.com DCX4710H © Diodes Incorporated Ordering Information (Note 5) Marking Code C02 Device DCX4710H-7 Notes: Packaging SOT-563 Shipping 3000/Tape & Reel 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information C02YM C02 = Product Type Marking Code YM = Date Code Marking Y = Year e.g., T = 2006 M = Month e.g., 9 = September Fig. 12 Date Code Key Year Code Month Code 2006 T Jan 1 Feb 2 Mar 3 2007 U Apr 4 2008 V May 5 Jun 6 2009 W Jul 7 Aug 8 2010 X Sep 9 2011 Y Oct O 2012 Z Nov N Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30871 Rev. 6 - 2 7 of 7 www.diodes.com DCX4710H © Diodes Incorporated