DIODES DMN26D0UDJ

DMN26D0UDJ
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
NEW PRODUCT
V(BR)DSS
Features and Benefits
•
•
ID
RDS(on)
TA = 25°C
3.0mΩ @ VGS= 4.5V
240mA
6.0mΩ @ VGS= 1.8V
170mA
20V
Description and Applications
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
•
•
DC-DC Converters
Power management functions
•
•
•
•
•
•
•
Dual N-Channel MOSFET
Low On-Resistance:
•
3.0 Ω @ 4.5V
•
4.0 Ω @ 2.5V
•
6.0 Ω @ 1.8V
•
10 Ω @ 1.5V
Very Low Gate Threshold Voltage, 1.05V max
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surface Mount Package
ESD Protected Gate (HBM 300V)
Lead, Halogen, and Antimony Free By Design/RoHS
Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
•
•
•
•
•
•
Case: SOT-963
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0027 grams (approximate)
D1
G2
S2
S1
G1
D2
SOT-963
ESD PROTECTED
Top View
Top View
Schematic and Transistor Diagram
Ordering Information (Note 3)
Part Number
DMN26D0UDJ-7
Notes:
Case
SOT-963
Packaging
10,000/Tape & Reel
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information (Note 4)
D1
G2
S2
M1 = Product Type Marking Code
M1
S1
Notes:
G1
D2
4. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
DMN26D0UDJ
Document number: DS31481 Rev. 5 - 2
1 of 5
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December 2010
© Diodes Incorporated
DMN26D0UDJ
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
NEW PRODUCT
Drain Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
Continuous Drain Current (Note 5) VGS = 1.8V
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Value
20
±10
240
190
ID
mA
180
140
805
ID
Pulsed Drain Current - TP = 10µs
Unit
V
V
IDM
mA
mA
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
300
409
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
20
⎯
⎯
⎯
IGSS
⎯
⎯
⎯
500
±1
±100
V
nA
μA
nA
VGS = 0V, ID = 100μA
VDS = 20V, VGS = 0V
VGS = ±10V, VDS = 0V
VGS = ±5V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
VGS(th)
RDS (ON)
1.05
3.0
4.0
6.0
10.0
|Yfs|
VSD
0.8
1.8
2.5
3.4
4.7
9.5
240
0.8
V
Static Drain-Source On-Resistance
0.45
⎯
⎯
⎯
⎯
⎯
180
0.5
⎯
1.0
mS
V
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 100mA
VGS = 2.5V, ID = 50mA
VGS = 1.8V, ID = 20mA
VGS = 1.5V, ID = 10mA
VGS = 1.2V, ID = 1mA
VDS =10V, ID = 0.1A
VGS = 0V, IS = 10mA
Ciss
Coss
Crss
⎯
⎯
⎯
14.1
2.9
1.6
⎯
⎯
⎯
pF
pF
pF
VDS = 15V, VGS = 0V
f = 1.0MHz
td(on)
tr
td(off)
tf
⎯
⎯
⎯
⎯
3.8
7.9
13.4
15.2
⎯
⎯
⎯
⎯
ns
VGS = 4.5V, VDD = 10V
ID = 200mA, RG = 2.0Ω
@ TC = 25°C
Gate-Body Leakage
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS, VGS = 4.5V (Note 7)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes:
Ω
⎯
Test Condition
5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch with minimum recommended pad layout; pad layout as shown on Diodes Inc. suggested
pad layout document AP02001, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Switching characteristics are independent of operating junction temperature. Guaranteed by design, not subject to production testing.
DMN26D0UDJ
Document number: DS31481 Rev. 5 - 2
2 of 5
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December 2010
© Diodes Incorporated
DMN26D0UDJ
0.8
0.4
VGS = 8V
VDS = -10V
VGS = 4.5V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
0.6
VGS = 3.0V
0.5
VGS = 2.5V
0.4
0.3
VGS = 2.0V
0.2
0.1
TA = 25°C
T A = 85°C
T A = 125°C
0.2
T A = 150°C
0.1
0
0
0.5
1
1.5
2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
3
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
10
9
8
7
6
VGS = 1.2V
5
4
VGS = 1.5V
3
VGS = 1.8V
2
VGS = 2.5V
1
VGS = 4.5V
0
1
0
10
100
ID, DRAIN-SOURCE CURRENT (mA)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1,000
3
T A = 150°C
2
TA = 25°C
1
T A = -55°C
0
0.01
3.5
1.4
VGS = 2.5V
ID = 150mA
1.2
1.0
0.8
0.4
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
DMN26D0UDJ
Document number: DS31481 Rev. 5 - 2
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0.1
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
1
3.0
2.5
2.0
VGS = 2.5V
ID = 150mA
1.5
1.0
0.6
T A = 125°C
TA = 85°C
1.8
VGS = 4.5V
ID = 500mA
3
VGS = 4.5V
4.0
1.6
0.5
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
4
2.0
RDSON , DRAIN-SOURCE
ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
T A = -55°C
0.3
VGS = 1.5V
0
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
0.7
VGS = 4.5V
ID = 500mA
0.5
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
December 2010
© Diodes Incorporated
0.8
1.2
0.7
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
1.4
1.0
0.8
ID = 1mA
0.6
ID = 250µA
0.4
0.2
0.6
T A = 25°C
0.5
0.4
0.3
0.2
0.1
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
20
10,000
IDSS, LEAKAGE CURRENT (nA)
f = 1MHz
15
C, CAPACITANCE (pF)
NEW PRODUCT
DMN26D0UDJ
Ciss
10
5
Coss
1,000
TA = 150°C
TA = 125°C
100
TA = 85°C
10
TA = 25°C
1
TA = -55°C
Crss
0
0
0.1
5
10
15
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
20
0
2
4
6
8 10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
Package Outline Dimensions
D
e1
L
E
E1
e
b (6 places)
c
A
SOT-963
Dim Min
Max Typ
A
0.40
0.50 0.45
A1
0
0.05
c
0.120 0.180 0.150
D
0.95
1.05 1.00
E
0.95
1.05 1.00
E1
0.75
0.85 0.80
L
0.05
0.15 0.10
b
0.10
0.20 0.15
e
0.35 Typ
e1
0.70 Typ
All Dimensions in mm
A1
DMN26D0UDJ
Document number: DS31481 Rev. 5 - 2
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December 2010
© Diodes Incorporated
DMN26D0UDJ
Suggested Pad Layout
NEW PRODUCT
C
C
Dimensions Value (in mm)
C
0.350
X
0.200
Y
0.200
Y1
1.100
Y1
Y (6X)
X (6X)
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
DMN26D0UDJ
Document number: DS31481 Rev. 5 - 2
5 of 5
www.diodes.com
December 2010
© Diodes Incorporated