DMN26D0UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V(BR)DSS Features and Benefits • • ID RDS(on) TA = 25°C 3.0mΩ @ VGS= 4.5V 240mA 6.0mΩ @ VGS= 1.8V 170mA 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • DC-DC Converters Power management functions • • • • • • • Dual N-Channel MOSFET Low On-Resistance: • 3.0 Ω @ 4.5V • 4.0 Ω @ 2.5V • 6.0 Ω @ 1.8V • 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.05V max Low Input Capacitance Fast Switching Speed Ultra-Small Surface Mount Package ESD Protected Gate (HBM 300V) Lead, Halogen, and Antimony Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Mechanical Data • • • • • • Case: SOT-963 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0027 grams (approximate) D1 G2 S2 S1 G1 D2 SOT-963 ESD PROTECTED Top View Top View Schematic and Transistor Diagram Ordering Information (Note 3) Part Number DMN26D0UDJ-7 Notes: Case SOT-963 Packaging 10,000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information (Note 4) D1 G2 S2 M1 = Product Type Marking Code M1 S1 Notes: G1 D2 4. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways). DMN26D0UDJ Document number: DS31481 Rev. 5 - 2 1 of 5 www.diodes.com December 2010 © Diodes Incorporated DMN26D0UDJ Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS NEW PRODUCT Drain Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 4.5V Steady State Continuous Drain Current (Note 5) VGS = 1.8V Steady State TA = 25°C TA = 70°C TA = 25°C TA = 70°C Value 20 ±10 240 190 ID mA 180 140 805 ID Pulsed Drain Current - TP = 10µs Unit V V IDM mA mA Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 300 409 -55 to +150 Unit mW °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol Min Typ Max Unit BVDSS IDSS 20 ⎯ ⎯ ⎯ IGSS ⎯ ⎯ ⎯ 500 ±1 ±100 V nA μA nA VGS = 0V, ID = 100μA VDS = 20V, VGS = 0V VGS = ±10V, VDS = 0V VGS = ±5V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) RDS (ON) 1.05 3.0 4.0 6.0 10.0 |Yfs| VSD 0.8 1.8 2.5 3.4 4.7 9.5 240 0.8 V Static Drain-Source On-Resistance 0.45 ⎯ ⎯ ⎯ ⎯ ⎯ 180 0.5 ⎯ 1.0 mS V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 100mA VGS = 2.5V, ID = 50mA VGS = 1.8V, ID = 20mA VGS = 1.5V, ID = 10mA VGS = 1.2V, ID = 1mA VDS =10V, ID = 0.1A VGS = 0V, IS = 10mA Ciss Coss Crss ⎯ ⎯ ⎯ 14.1 2.9 1.6 ⎯ ⎯ ⎯ pF pF pF VDS = 15V, VGS = 0V f = 1.0MHz td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ 3.8 7.9 13.4 15.2 ⎯ ⎯ ⎯ ⎯ ns VGS = 4.5V, VDD = 10V ID = 200mA, RG = 2.0Ω @ TC = 25°C Gate-Body Leakage Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS, VGS = 4.5V (Note 7) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: Ω ⎯ Test Condition 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch with minimum recommended pad layout; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com. 6. Short duration pulse test used to minimize self-heating effect. 7. Switching characteristics are independent of operating junction temperature. Guaranteed by design, not subject to production testing. DMN26D0UDJ Document number: DS31481 Rev. 5 - 2 2 of 5 www.diodes.com December 2010 © Diodes Incorporated DMN26D0UDJ 0.8 0.4 VGS = 8V VDS = -10V VGS = 4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.6 VGS = 3.0V 0.5 VGS = 2.5V 0.4 0.3 VGS = 2.0V 0.2 0.1 TA = 25°C T A = 85°C T A = 125°C 0.2 T A = 150°C 0.1 0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 3 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 10 9 8 7 6 VGS = 1.2V 5 4 VGS = 1.5V 3 VGS = 1.8V 2 VGS = 2.5V 1 VGS = 4.5V 0 1 0 10 100 ID, DRAIN-SOURCE CURRENT (mA) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1,000 3 T A = 150°C 2 TA = 25°C 1 T A = -55°C 0 0.01 3.5 1.4 VGS = 2.5V ID = 150mA 1.2 1.0 0.8 0.4 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMN26D0UDJ Document number: DS31481 Rev. 5 - 2 3 of 5 www.diodes.com 0.1 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1 3.0 2.5 2.0 VGS = 2.5V ID = 150mA 1.5 1.0 0.6 T A = 125°C TA = 85°C 1.8 VGS = 4.5V ID = 500mA 3 VGS = 4.5V 4.0 1.6 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 4 2.0 RDSON , DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) T A = -55°C 0.3 VGS = 1.5V 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 0.7 VGS = 4.5V ID = 500mA 0.5 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature December 2010 © Diodes Incorporated 0.8 1.2 0.7 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.4 1.0 0.8 ID = 1mA 0.6 ID = 250µA 0.4 0.2 0.6 T A = 25°C 0.5 0.4 0.3 0.2 0.1 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 20 10,000 IDSS, LEAKAGE CURRENT (nA) f = 1MHz 15 C, CAPACITANCE (pF) NEW PRODUCT DMN26D0UDJ Ciss 10 5 Coss 1,000 TA = 150°C TA = 125°C 100 TA = 85°C 10 TA = 25°C 1 TA = -55°C Crss 0 0 0.1 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 20 0 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage Package Outline Dimensions D e1 L E E1 e b (6 places) c A SOT-963 Dim Min Max Typ A 0.40 0.50 0.45 A1 0 0.05 c 0.120 0.180 0.150 D 0.95 1.05 1.00 E 0.95 1.05 1.00 E1 0.75 0.85 0.80 L 0.05 0.15 0.10 b 0.10 0.20 0.15 e 0.35 Typ e1 0.70 Typ All Dimensions in mm A1 DMN26D0UDJ Document number: DS31481 Rev. 5 - 2 4 of 5 www.diodes.com December 2010 © Diodes Incorporated DMN26D0UDJ Suggested Pad Layout NEW PRODUCT C C Dimensions Value (in mm) C 0.350 X 0.200 Y 0.200 Y1 1.100 Y1 Y (6X) X (6X) IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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