VISHAY VSKDL450

VSKDL450 Series
Vishay Semiconductors
Fast Diodes, 460 A
(SUPER MAGN-A-PAK Power Modules)
FEATURES
• High power fast recovery diode series
• High current capability
• 3000 VRMS isolating voltage with non-toxic
substrate
• High surge capability
• High voltage ratings up to 2500 V
• Industrial standard package
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
SUPER MAGN-A-PAK
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
PRODUCT SUMMARY
IF(AV)
460 A
• Snubber for large GTO
Type
Modules - Diode, Fast
• Snubber for large IGBT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
TC
IF(RMS)
TC
IFSM
I2t
VALUES
460
A
82
°C
720
A
82
°C
50 Hz
13 000
60 Hz
13 800
50 Hz
845
60 Hz
790
I2t
UNITS
A
kA2s
kA2s
8450
VRRM
Range
trr
TStg, TJ
Range
1600 to 2500
V
4.0
μs
- 40 to 150
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VSKDL450..S20
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
16
1600
1700
20
2000
2100
25
2500
2600
Document Number: 93165
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
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IRRM MAXIMUM
AT TJ MAXIMUM
mA
50
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VSKDL450 Series
Vishay Semiconductors
Fast Diodes, 460 A
(SUPER MAGN-A-PAK Power Modules)
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
IF(AV)
Maximum RMS forward current
TEST CONDITIONS
82
°C
A
t = 10 ms
No voltage
reapplied
13.0
100 % VRRM
reapplied
11.1
t = 8.3 ms
I2t
t = 10 ms
t = 8.3 ms
I2t
for fusing
13.8
kA
t = 10 ms
t = 10 ms
Maximum
A
720
t = 8.3 ms
I2t
460
180° conduction, half sine wave at TC = 82 °C
t = 8.3 ms
IFSM
Maximum I2t for fusing
UNITS
180° conduction, half sine wave
IF(RMS)
Maximum peak, one-cycle forward,
non-repetitive surge current
VALUES
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
11.8
845
790
578
t = 0.1 ms to 10 ms, no voltage reapplied
8450
Low level value of threshold voltage
VF(TO)1
(16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum
1.16
High level value of threshold voltage
VF(TO)2
(I >  x IF(AV)), TJ = TJ maximum
1.62
rf1
(16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum
0.68
High level value of forward slope resistance
rf2
(I >  x IF(AV)), TJ = TJ maximum
0.41
Ipk = 1800 A, TJ = 25 °C, tp = 10 ms sine pulse
2.20
VFM
kA2s
V
Low level value of forward slope resistance
Maximum forward voltage drop
kA2s
616
100 % VRRM
reapplied
m
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
CODE
trr AT 25 % IRRM
( s)
S20
2.0
TYPICAL VALUES
AT TJ = 150 °C
TEST CONDITIONS
IFM
Ipk
SQUARE
PULSE
(A)
dI/dt
(A/ s)
1000
100
Vr
(V)
- 50
trr AT 25 % IRRM
( s)
Qrr
( C)
4
400
Ir
(A)
di
dt
trr
t
Qrr
IRM(REC)
180
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
RMS insulation voltage
VINS
t=1s
Maximum peak reverse and
off-state leakage current
IRRM
TJ = TJ maximum, rated VRRM applied
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VALUES
UNITS
3000
V
50
mA
Document Number: 93165
Revision: 02-Jul-10
VSKDL450 Series
Fast Diodes, 460 A
Vishay Semiconductors
(SUPER MAGN-A-PAK Power Modules)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case per junction
RthJC
Maximum thermal resistance,
case to heatsink
RthC-hs
DC operation
VALUES
UNITS
- 40 to 150
°C
0.065
K/W
SMAP to heatsink
Mounting torque ± 10 %
busbar to SMAP
0.02
A mounting compound is recommended and
the torque should be rechecked after a
period of 3 hours to allow for the spread
of the compound.
Approximate weight
6 to 8
Nm
12 to 15
1500
Case style
See dimensions - link at the end of datasheet
g
SUPER MAGN-A-PAK
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.009
0.006
120°
0.011
0.011
90°
0.014
0.015
60°
0.021
0.022
30°
0.037
0.038
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 93165
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
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VSKDL450 Series
150
VSKDL450.. Series
R thJC (DC) = 0.065 K/ W
140
130
120
Conduction Angle
110
100
90
30°
80
60°
90°
120°
70
180°
60
0
100
200
300
400
500
Maximum Average Forward Power Loss (W)
Fast Diodes, 460 A
(SUPER MAGN-A-PAK Power Modules)
1200
DC
180°
120°
90°
60°
30°
1000
800
600 RMS Limit
Conduc tion Period
400
VSKDL450.. Series
Per Junction
TJ= 150°C
200
0
0
100 200 300 400 500 600 700 800
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Forward Power Loss Characteristics
150
VSKDL450.. Series
RthJC (DC) = 0.065 K/ W
140
130
120
Conduction Period
110
100
90
30°
80
60°
90°
120°
70
180°
DC
60
0
Peak Half Sine Wave Forward Current (A)
Average Forward Current (A)
100 200 300 400 500 600 700 800
12000
At Any Ra ted Load Cond ition And With
Ra ted VRRM Ap plied Following Surge.
Initial TJ= 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
11000
10000
9000
8000
7000
6000
5000
VSKDL450.. Series
Per Junction
4000
3000
1
10
100
Average Forward Current (A)
Numb er Of Equa l Amplitude Half Cyc le Curre nt Pulses (N)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
900
180°
120°
90°
60°
30°
800
700
600
RMS Limit
500
400
Cond uc tion Angle
300
200
VSKDL450.. Series
Per Junction
TJ= 150°C
100
0
0
50 100 150 200 250 300 350 400 450
Peak Half Sine Wave Forw ard Current (A)
Maximum Average Forward Power Loss (W)
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
Vishay Semiconductors
14000
13000
12000
11000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 150°C
No Voltage Reapplied
Rated V RRM Reapplied
10000
9000
8000
7000
6000
5000
4000
3000
0.01
VSKDL450.. Series
Per Junction
0.1
1
Average Forward Current (A)
Pulse Train Duration (s)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
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For technical questions within your region, please contact one of the following:
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Document Number: 93165
Revision: 02-Jul-10
VSKDL450 Series
1200
DC
1100
0.
1
K/
W
ta
el
-D
700
W
K/
180°
(Sine)
800
02
0.
900
=
0.
04
0.
K/
06
W
K/
W
1000
SA
R th
0.1
6K
/W
0.2
5K
/W
600
500
400
300
VSKDL450.. Series
Per Module
TJ = 150°C
200
100
0.5 K
/
R
Maximum Total Forward Power Loss (W)
Fast Diodes, 460 A
Vishay Semiconductors
(SUPER MAGN-A-PAK Power Modules)
W
0
0
100 200 300 400 500 600 700 800
0
Total RMSOutput Current (A)
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - Forward Power Loss Characteristics
4000
0.
02
0.0
8K
/W
0.12
K/ W
0.2 K/
W
2 x VSKDL450.. Series
Single Phase Bridge
Connected
TJ = 150°C
500
R
1500
ta
0.0
5K
/W
el
-D
2000
/W
K
K/
W
0.0
3K
/W
2500
1000
01
0.
3000
=
180°
(Sine)
180°
(Rec t)
A
hS
Maximum Total Power Loss (W)
Rt
3500
0
0
0
100 200 300 400 500 600 700 800 900
Total Output Current (A)
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - Forward Power Loss Characteristics
6000
0.
01
K/
W
R
3000
ta
el
-D
0.0
2
3500
W
K/
4000
K/
W
K/
W
1
00
0.
4500
=
Maximum Total Power Loss (W)
0.
00
5
120°
(Rect)
A
hS
5000
Rt
5500
0.0
4K
/W
2500
2000
3 x VSKDL450.. Series
Three Phase Bridge
Connected
TJ = 150°C
1500
1000
500
0.08
K/
W
0.2 K/ W
0
0
200
400
600
800 1000 1200 1400
0
Total Output Current (A)
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - Forward Power Loss Characteristics
Document Number: 93165
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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5
VSKDL450 Series
Fast Diodes, 460 A
(SUPER MAGN-A-PAK Power Modules)
1000
10000
Instantaneous Forward Current (A)
I FM = 1500 A
Sine Pulse
900
800
1000 A
700
600
500 A
500
400
300
VSKDL450.. Series
TJ= 150 °C; V r > 100V
200
100
0
0
50
100
150
200
250
TJ= 25°C
TJ= 150°C
1000
VSKDL450.. Series
Per Junction
100
0.5
300
1
1.5
2
2.5
3
3.5
4
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Instantaneous Forward Voltage (V)
Fig. 10 - Recovery Charge Characteristics
Fig. 12 - Forward Voltage Drop Characteristics
500
Transient Thermal Impedanc e Z thJC (K/ W)
Maximum Reverse Rec overy Current - Irr (A)
Maximum Reverse Rec overy Charge - Qrr (µC)
Vishay Semiconductors
I FM = 1500 A
Sine Pulse
450
400
1000 A
500 A
350
300
250
200
150
VSKDL450.. Series
TJ= 150 °C; Vr > 100V
100
50
0
0
50
100
150
200
250
300
0.1
VSKDL450.. Series
Per Junc tion
0.01
Steady State Value:
R thJC = 0.065 K/ W
(DC Operation)
0.001
0.001
0.01
0.1
1
10
100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Square Wave Pulse Duration (s)
Fig. 11 - Recovery Current Characteristics
Fig. 13 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VSK
D
L
450
1
2
3
4
1
-
Module type
2
-
Circuit configuration:
-
25
S20
5
6
D = 2 diodes in series (see Circuit Configuration table)
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6
3
-
Fast recovery
4
-
Current rating
5
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
6
-
trr code (see Recovery Characteristics table)
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 93165
Revision: 02-Jul-10
VSKDL450 Series
Fast Diodes, 460 A
Vishay Semiconductors
(SUPER MAGN-A-PAK Power Modules)
CIRCUIT CONFIGURATION
CIRCUIT
Two diodes doubler circuit
CIRCUIT
CONFIGURATION CODE
D
CIRCUIT DRAWING
1
~
+
2
-
3
LINKS TO RELATED DOCUMENTS
Dimensions
Document Number: 93165
Revision: 02-Jul-10
www.vishay.com/doc?95088
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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Outline Dimensions
Vishay Semiconductors
Super MAGN-A-PAK Diode
52 (2.05)
DIMENSIONS in millimeters (inches)
31.0
(1.22)
44.0
(1.73)
50.0
(1.97)
Fast-on tabs
2.8 x 0.8 (0.11 x 0.03)
3
2
26.0
(0.98)
26.0
(0.98)
20.1
(0.78)
1
28.0
(1.10)
48.0 (1.89)
60.0 (2.36)
M10
36.4 (1.14)
4.5 (0.20)
112.0 (4.41)
124.0 (4.88)
1.0 (0.039)
149.0 (5.67)
Document Number: 95088
Revision: 20-Mar-08
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Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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