VISHAY 20ETF06FNPBF

20ETF..FPPbF Soft Recovery Series
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
• The fully isolated package (VINS = 2500 VRMS) is
UL E78996 approved
Base
cathode
• Compliant to RoHS directive 2002/95/EC
2
• Designed and qualified for industrial level
APPLICATIONS
TO-220AC FULL-PAK
1
Cathode
3
Anode
• Output rectification and
choppers and converters
freewheeling
• Input rectifications where severe
conducted EMI should be met
in
inverters,
restrictions
on
DESCRIPTION
PRODUCT SUMMARY
The 20ETF..FPPbF soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
VF at 10 A
< 1.2 V
IFSM
300 A
VRRM
200 V to 600 V
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Sinusoidal waveform
VALUES
UNITS
20
A
VRRM
200 to 600
V
IFSM
300
A
VF
10 A, TJ = 25 °C
1.2
V
trr
1 A, 100 A/μs
60
ns
- 40 to 150
°C
TJ
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
20ETF02FPPbF
200
300
20ETF04FPPbF
400
500
20ETF06FPPbF
600
700
IRRM
AT 150 °C
mA
5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
Maximum peak one cycle non-repetitive
surge current
IF(AV)
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
TEST CONDITIONS
VALUES
TC = 94 °C, 180° conduction half sine wave
20
10 ms sine pulse, rated VRRM applied
250
10 ms sine pulse, no voltage reapplied
300
10 ms sine pulse, rated VRRM applied
316
10 ms sine pulse, no voltage reapplied
442
t = 0.1 ms to 10 ms, no voltage reapplied
4420
UNITS
A
A2s
A2s
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94095
Revision: 06-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
20ETF..FPPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
Forward slope resistance
VFM
TEST CONDITIONS
VALUES
20 A, TJ = 25 °C
1.30
60 A, TJ = 25 °C
1.67
rt
Threshold voltage
VF(TO)
Maximum reverse leakage current
IRM
TJ = 150 °C
TJ = 25 °C
V
12.5
m
0.9
V
0.1
VR = Rated VRRM
TJ = 150 °C
UNITS
mA
5.0
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Snap factor
S
TEST CONDITIONS
VALUES
UNITS
IF at 20 Apk
160
ns
100 A/μs
25 °C
10
A
1.25
μC
Typical
0.6
IFM
trr
ta
tb
t
dir
dt
Qrr
IRM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
DC operation
UNITS
- 40 to 150
°C
1.5
62
Mounting surface, smooth and greased
Approximate weight
Mounting torque
VALUES
°C/W
1.5
2
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
20ETF02FP
Marking device
Case style TO-220 FULL-PAK
20ETF04FP
20ETF06FP
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For technical questions within your region, please contact one of the following:
[email protected]shay.com, [email protected], [email protected]
Document Number: 94095
Revision: 06-Aug-10
20ETF..FPPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
45
20ETF.. Series
RthJC (DC) = 1.5 K/W
140
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
150
130
120
Ø
Conduction angle
110
100
90
60° 90° 120° 180°
30°
80
5
10
35
30
25
20
RMS limit
Ø
Conduction period
15
10
20ETF.. Series
TJ = 150 °C
5
0
25
20
15
5
10
20
15
25
30
35
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
150
300
At any rated load condition and with
rated VRRM applied following surge.
20ETF.. Series
RthJC (DC) = 1.5 K/W
140
Peak Half Sine Wave
Forward Current (A)
Maximum Allowable Case
Temperature (°C)
DC
180°
120°
90°
60°
30°
40
0
0
130
Ø
120
Conduction period
110
30°
100
90°
90
60°
120°
180°
250
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
200
150
100
20ETF.. Series
DC
50
80
0
5
10
15
20
30
25
35
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
35
550
25
180°
120°
90°
60°
30°
20
RMS limit
30
500
Peak Half Sine Wave
Forward Current (A)
Maximum Average Forward
Power Loss (W)
Vishay Semiconductors
15
Ø
10
Conduction angle
20ETF.. Series
TJ = 150 °C
5
0
5
10
15
20
450
25
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
400
350
300
250
200
150
100
0
Maximum non-repetitive surge current
versus pulse train duration.
50
0.001
20ETF.. Series
0.01
0.1
1
Average Forward Current (A)
Pulse Train Duration (s)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94095
Revision: 06-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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3
20ETF..FPPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
1000
4.0
100
TJ = 25 °C
TJ = 150 °C
10
IFM = 20 A
2.5
2.0
IFM = 10 A
1.5
1.0
IFM = 5 A
20ETF.. Series
IFM = 1 A
1
0
1
2
3
0
5
4
200
400
600
800
1000
Instantaneous Forward Voltage (V)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
0.20
10
20ETF.. Series
TJ = 25 °C
0.15
IFM = 30 A
IFM = 20 A
0.10
IFM = 10 A
0.05
20ETF.. Series
TJ = 150 °C
9
Qrr - Maximum Reverse
Recovery Charge (µC)
trr - Maximum Reverse
Recovery Time (µs)
3.0
0.5
0
IFM = 5 A
IFM = 1 A
0
IFM = 30 A
8
7
IFM = 20 A
6
5
4
IFM = 10 A
3
2
IFM = 5 A
1
IFM = 1 A
0
0
200
400
600
800
1000
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
0.5
70
20ETF.. Series
TJ = 150 °C
0.4
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
0.3
0.2
0.1
20ETF.. Series
TJ = 25 °C
60
Irr - Maximum Reverse
Recovery Current (A)
trr - Maximum Reverse
Recovery Time (µs)
IFM = 30 A
20ETF.. Series
TJ = 25 °C
3.5
Qrr - Maximum Reverse
Recovery Charge (µC)
Instantaneous Forward Current (A)
Vishay Semiconductors
IFM = 30 A
50
IFM = 20 A
40
IFM = 10 A
30
IFM = 5 A
20
10
0
IFM = 1 A
0
0
200
400
600
800
1000
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94095
Revision: 06-Aug-10
20ETF..FPPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
Vishay Semiconductors
100
20ETF.. Series
TJ = 150 °C
IFM = 30 A
Irr - Maximum Reverse
Recovery Current (A)
80
IFM = 20 A
60
IFM = 10 A
40
IFM = 5 A
20
IFM = 1 A
0
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
ZthJC - Transient Thermal Impedance (K/W)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
10
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Steady state value
(DC operation)
0.1
Single pulse
20ETF.. Series
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Document Number: 94095
Revision: 06-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
5
20ETF..FPPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
20
E
T
F
06
FP
PbF
1
2
3
4
5
6
7
1
-
Current rating (20 = 20 A)
2
-
Circuit configuration:
E = Single diode
3
-
Package:
T = TO-220AC
4
-
Type of silicon:
F = Fast soft recovery rectifier
5
-
Voltage code x 100 = VRRM
6
-
FULL-PAK
7
-
02 = 200 V
04 = 400 V
06 = 600 V
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95005
Part marking information
www.vishay.com/doc?95009
SPICE model
www.vishay.com/doc?95410
www.vishay.com
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94095
Revision: 06-Aug-10
Outline Dimensions
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Vishay Semiconductors
DIMENSIONS in millimeters
10.6
10.4
Hole Ø
3.4
3.1
2.8
2.6
3.7
3.2
7.31
6.91
16.0
15.8
16.4
15.4
10°
3.3
3.1
13.56
13.05
2.54 TYP.
0.9
0.7
0.61
0.38
2.54 TYP.
R 0.7
(2 places)
R 0.5
4.8
4.6
5° ± 0.5°
Revision: 20-Jul-11
5° ± 0.5°
1.4
1.3
2.85
2.65
1.15
TYP.
1.05
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
Conforms to JEDEC outline TO-220 FULL-PAK
Document Number: 95005
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
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