DMC25D1UVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features and Benefits Device V(BR)DSS RDS(ON) ID TA = +25°C Q1 25V 4Ω @ VGS = 4.5V 0.5A Q2 -12V 55mΩ @ VGS= -4.5V -3.9A 70mΩ @ VGS= -2.5V -3.5A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, Applications Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data making it ideal for high efficiency power management applications. Case: TSOT26 Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.013 grams (Approximate) DC-DC Converters Power Management Functions Load Switch TSOT26 4 ON/OFF 5 3 Vout, C1 2 Vout, C1 6 1 R2 G2 G1 Q1 R1, C1 D2 D1 Q2 Vin, R1 Gate Protection Diode Top View Top View Internal circuit Gate Protection Diode S1 S2 Q2 P-Channel MOSFET Q1 N-Channel MOSFET Ordering Information (Note 4) Part Number DMC25D1UVT-7 DMC25D1UVT-13 Notes: Case TSOT26 TSOT26 Packaging 3000 / Tape & Reel 10000 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information G2 D1 S1 Date Code Key Year Code Month Code 2015 C Jan 1 G1 S2 C6D C5D M YYM INFORMATION ADVANCE INFORMATION ADVANCED NEW PRODUCT Product Summary D2 D2 2016 D Feb 2 DMC25D1UVT Document number: DS37507 Rev. 2 - 2 Mar 3 C6D = Product Type Marking Code YM or YM = Date Code Marking Y or Y = Year (ex: C = 2015) M = Month (ex: 9 = September) 2017 E Apr 4 May 5 2018 F Jun 6 2019 G Jul 7 1 of 9 www.diodes.com Aug 8 2020 H Sep 9 Oct O 2021 I Nov N Dec D April 2015 © Diodes Incorporated DMC25D1UVT Maximum Ratings – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic INFORMATION ADVANCE INFORMATION ADVANCED NEW PRODUCT Drain-Source Voltage Symbol VDSS Gate-Source Voltage VGSS Continuous Drain Current (Note 5) VGS = 4.5V Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (Note 6) ID IS IDM Value 25 -0.5 +8 0.5 1.2 1.5 Unit V Value -12 ±8 -3.9 -17.4 -2.82 -40 -40 Unit V V A A A A A Value 1.3 100 5 36 -55 to +150 Unit W V A A A Maximum Ratings – Q2 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Note 9 Continuous Drain Current (Note 5) VGS = -4.5V ID Continuous Drain Current (Note 5) VGS = -2.5V Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (Note 6) IS IDM Thermal Characteristics Characteristic Symbol PD Power Dissipation (Note 5) Steady State Note 9 Thermal Resistance, Junction to Ambient (Note 5) RθJA Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range RθJC TJ, TSTG °C/W °C/W °C Electrical Characteristics – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 25 — — — — — — 1 100 V µA nA VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = 8V, VDS = 0V VGS(TH) RDS(ON) VSD 0.65 — — 0.85 3.8 0.76 1.5 4 1.2 V Ω V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 0.4A VGS = 0V, IS = 0.29A Ciss Coss Crss Rg Qg Qg Qgs Qgd — — — — — — — — — — — — 27.6 8.5 3.3 25 0.4 0.9 0.1 0.04 2.5 1.4 5.7 4.3 — — — — — — — — — — — — pF VDS = 10V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 5V, ID = 0.2A ns VGS = 4.5V, VDS = 6V, RG = 50Ω, ID = 0.5A tD(ON) tR tD(OFF) tF Test Condition 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1in. square copper plate. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 9. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%. DMC25D1UVT Document number: DS37507 Rev. 2 - 2 2 of 9 www.diodes.com April 2015 © Diodes Incorporated DMC25D1UVT Characteristic OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 10) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -12 — — — — — — -1 ±10 V µA µA VGS = 0V, ID = -250µA VDS = -6.4V, VGS = 0V VGS = ±8V, VDS = 0V VGS(TH) RDS(ON) VSD — — — — — -1.5 55 70 100 -1.2 V Static Drain-Source On-Resistance -0.35 — — — — VDS = VGS, ID = -250μA VGS = -4.5V, ID = -2.8A VGS = -2.5V, ID = -2.5A VGS = -1.8V, ID = -2.0A VGS = 0V, IS = -0.6A Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF — — — — — — — — — — — 9.7 393 1.9 1846 24.5 3.3 7.3 1.2 2.7 9.8 6.5 — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ V Test Condition pF VDS = -6V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = -6V, ID = -2.8A µs VGS = -4.5V, VDS = -6V, RG = 6Ω, ID = -2.8A 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to production testing. Typical Characteristics - N-CHANNEL 1 1.5 VGS=4.5V VDS= 5V VGS=2.5V ID, DRAIN CURRENT (A) VGS=3.0V 0.9 VGS=3.5V VGS=2.0V 0.6 VGS=1.5V 0.3 -55℃ 25℃ 125℃ 0.8 VGS=4.0V 1.2 ID, DRAIN CURRENT (A) INFORMATION ADVANCE INFORMATION ADVANCED NEW PRODUCT Electrical Characteristics – Q2 (@TA = +25°C, unless otherwise specified.) 85℃ 150℃ 0.6 0.4 0.2 VGS=1.2V 0 0.0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic DMC25D1UVT Document number: DS37507 Rev. 2 - 2 0 3 3 of 9 www.diodes.com 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 3 April 2015 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.5 1.2 VGS=4.5V 0.9 0.6 0.3 0 5 4 3 2 ID=400mA 1 0 0.3 0.6 0.9 1.2 1.5 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 1 2 3 4 5 6 7 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 8 1.8 3 VGS= 4.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 150℃ 2.5 2 125℃ 85℃ 1.5 25℃ 1 -55℃ 0.5 0 0 0.3 0.6 0.9 1.2 VGS=4.5V, ID=400mA 1.6 1.4 1.2 VGS=2.5V, ID=200mA 1 0.8 0.6 -50 1.5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature 2 1.2 1.5 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) INFORMATION ADVANCE INFORMATION ADVANCED NEW PRODUCT DMC25D1UVT VGS=2.5V, ID=200mA 1 VGS=4.5V, ID=400mA 0.5 0 1.1 1 ID=1mA 0.9 0.8 ID=250μA 0.7 0.6 0.5 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature DMC25D1UVT Document number: DS37507 Rev. 2 - 2 4 of 9 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature April 2015 © Diodes Incorporated 100 f=1MHz CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 VGS=0V, TA=150℃ VGS=0V, TA=85℃ VGS=0V, TA=125℃ VGS=0V, TA=25℃ Ciss Coss 10 Crss VGS=0V, TA=-55℃ 1 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 1.5 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 20 10 10 RDS(ON) Limited PW =100μs PW =1ms ID, DRAIN CURRENT (A) 8 VGS (V) 6 VDS=5V, ID=200mA 4 2 0 PW =10ms 1 PW =100ms 0.1 PW =1s TJ(MAX)=150℃ TA=25℃ Single Pulse DUT on 1*MRP board VGS=10V 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Qg (nC) Figure 11. Gate Charge r(t), TRANSIENT THERMAL RESISTANCE INFORMATION ADVANCE INFORMATION ADVANCED NEW PRODUCT DMC25D1UVT 1 0.1 PW =10s DC 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 1 D=0.5 D=0.9 D=0.3 0.1 D=0.7 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t)=r(t) * RθJA RθJA=149℃/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 1E-05 DMC25D1UVT Document number: DS37507 Rev. 2 - 2 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance 5 of 9 www.diodes.com 100 1000 April 2015 © Diodes Incorporated DMC25D1UVT Typical Characteristics - P-CHANNEL 20 30.0 VGS=-2.5V VGS=-3.0V VGS=-4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 16 VGS=-2.0V 20.0 VGS=-8.0V VGS=-1.8V 15.0 10.0 VGS=-1.5V 5.0 12 10 8 6 4 125℃ 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 14. Typical Output Characteristic 0 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.04 0.035 VGS=-2.5V 0.03 0.025 VGS=-4.5V 0.02 0.015 0.01 0.005 0 85℃ 25℃ 150℃ 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 14 2 VGS=-1.2V -55℃ 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 15. Typical Transfer Characteristic 3 0.3 0.25 ID=-2.8A 0.2 0.15 0.1 0.05 ID=-2.5A 0 0 4 6 8 10 12 14 16 18 20 ID, DRAIN-SOURCE CURRENT (A) Figure 16. Typical On-Resistance vs. Drain Current and Gate Voltage 2 0 2 4 6 VGS, GATE-SOURCE VOLTAGE (V) Figure 17. Typical Transfer Characteristic 8 1.4 0.028 VGS=- 4.5V 0.026 125℃ 150℃ 0.024 85℃ 0.022 25℃ 0.02 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.03 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) INFORMATION ADVANCE INFORMATION ADVANCED NEW PRODUCT 25.0 VDS= -5V 18 -55℃ 0.018 0.016 0.014 0.012 1.2 VGS=-4.5V, ID=-5.0A 1 VGS=-2.5V, ID=-3.0A 0.8 0.6 0.01 0 2 4 6 8 10 12 14 16 18 20 ID, DRAIN CURRENT(A) Figure 18. Typical On-Resistance vs. Drain Current and Temperature DMC25D1UVT Document number: DS37507 Rev. 2 - 2 6 of 9 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 19. On-Resistance Variation with Temperature April 2015 © Diodes Incorporated 1.5 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.05 0.04 VGS=-2.5V, ID=-3.0A 0.03 0.02 VGS=-4.5V, ID=-5.0A 0.01 1.2 0.9 ID=-1mA 0.6 0 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 20. On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 21. Gate Threshold Variation vs. Junction Temperature 10000 20 f=1MHz CT, JUNCTION CAPACITANCE (pF) 18 IS, SOURCE CURRENT (A) ID=-250μA 0.3 -50 16 14 12 VGS=0V, TA=85℃ 10 8 VGS=0V, TA=125℃ 6 VGS=0V, TA=150℃ 4 VGS=0V, TA=25℃ 1000 Coss 100 Ciss 10 Crss 2 VGS=0V, TA=-55℃ 1 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 22. Diode Forward Voltage vs. Current 0 1.5 2 4 6 8 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 23. Typical Junction Capacitance 12 100 8 PW =100μs RDS(ON) Limited PW =1ms ID, DRAIN CURRENT (A) 6 VGS (V) INFORMATION ADVANCE INFORMATION ADVANCED NEW PRODUCT DMC25D1UVT 4 VDS=-6V, ID=-2.8A 2 10 PW =10ms 1 PW =100ms PW =1s TJ(MAX)=150℃ TA=25℃ PW =10s Single Pulse DUT on 1*MRP board VGS= -10V 0.1 DC 0.01 0 0 5 10 15 20 25 30 35 40 0.01 Document number: DS37507 Rev. 2 - 2 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 25. SOA, Safe Operation Area Qg (nC) Figure 24. Gate Charge DMC25D1UVT 0.1 7 of 9 www.diodes.com April 2015 © Diodes Incorporated DMC25D1UVT Application Circuit INFORMATION ADVANCE INFORMATION ADVANCED NEW PRODUCT Q2 In Out C1 R1 Ci Q1 On/Off Ca Load R2 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D e1 E E1 L2 c 4x1 e L 6x b A A2 A1 DMC25D1UVT Document number: DS37507 Rev. 2 - 2 8 of 9 www.diodes.com TSOT26 Dim Min Max Typ A 1.00 A1 0.01 0.10 A2 0.84 0.90 D 2.90 E 2.80 E1 1.60 b 0.30 0.45 c 0.12 0.20 e 0.95 e1 1.90 L 0.30 0.50 L2 0.25 θ 0° 8° 4° θ1 4° 12° All Dimensions in mm April 2015 © Diodes Incorporated DMC25D1UVT Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. INFORMATION ADVANCE INFORMATION ADVANCED NEW PRODUCT C C Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 Y1 Y (6x) X (6x) IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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