SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR FCX690B ISSSUE 1 - MARCH 1999 FEATURES * 2W POWER DISSIPATION * * * 6A Peak Pulse Current Gain of 400 @IC=1Amp Very Low Saturation Voltage Complimentary Type Partmarking Detail - C E FCX790A 690 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ** ICM 6 A Continuous Collector Current IC 2 A Power Dissipation at Tamb=25°C Ptot 1 † 2 ‡ W W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C † recommended Ptot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components. FCX690B ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage Min Typ Max UNIT CONDITIONS. 45 V IC=100A V(BR)CEO 45 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100A Collector Cut-Off Current ICBO 0.1 A VCB=35V Emitter Cut-Off Current IEBO 0.1 A VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 80 300 mV mV IC=0.1A, IB=0.5mA * IC=1A, IB=5mA * Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=1A, IB=10mA * Base-Emitter Turn-On Voltage VBE(on) 0.85 V IC=1A, VCE=2V * Static Forward Current Transfer Ratio hFE 500 400 150 Transition Frequency fT 150 Input Capacitance Cibo Output Capacitance Cobo Switching Times ton toff IC=100mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* MHz IC=50mA, VCE=5V f=50MHz 200 pF VEB=0.5V, f=1MHz 16 pF VCB=10V, f=1MHz 33 1300 ns ns IC=500mA, IB1=IB2=50mA VCC=10V *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% FCX690B TYPICAL CHARACTERISTICS Tamb=25°C IC/IB=200 IC/IB=100 IC/IB=10 0.8 VCE(sat) - (Volts) VCE(sat) - (Volts) 0.8 0.6 0.4 0.2 0.01 1 0.6 0.4 0 10 0.1 1 10 IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC VCE=2V 1.6 1.0 1K 0.8 0.6 500 0.4 0.2 VBE(sat) - (Volts) 1.5K 1.2 1.4 -55°C +25°C +100°C +175°C IC/IB=100 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.01 0.1 10 1 0 1.4 VBE(sat) v IC -55°C +25°C +100°C +175°C VCE=2V 1.0 0.8 0.6 0.4 0.2 0 1 hFE v IC 1.2 0 0.1 IC - Collector Current (Amps) IC - Collector Current (Amps) 1.6 0.01 IC - Collector Current (Amps) 10 VBE - (Volts) 0.01 IC - Collector Current (Amps) hFE - Typical Gain hFE - Normalised Gain 0.1 +100°C +25°C -55°C 1.4 IC/IB=100 0.2 0 1.6 -55°C +25°C +100°C +175°C 0.01 0.1 1 10 10 Single Pulse Test at Tamb=25°C 1 0.1 0.01 0.1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 1 10 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 100