SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - MARCH 2001 FMMTA92 ✪ PARTMARKING DETAILS: – FMMTA92 - 4E – FMMTA92R - 8E E C B COMPLEMENTARY TYPES: – FMMTA92 - FMMTA42 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage V CBO -300 V Collector-Emitter Voltage V CEO -300 V Emitter-Base Voltage V EBO Continuous Collector Current IC Power Dissipation at T amb = 25°C P tot Operating and Storage Temperature Range T j :T stg FMMTA92 UNIT -5 V -200 mA 330 mW -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). FMMTA92 PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V (BR)CBO -300 MAX. V I C=-100 µ A, I E=0 Collector-Emitter Breakdown Voltage V (BR)CEO -300 V I C=-1mA, I B=0* Emitter-Base Breakdown Voltage V (BR)EBO -5 V I E=-100 µ A, I C=0 Collector Cut-Off Current I CBO -0.25 µA µA V CB=-200V, I E=0 V CB=-160V, I E=0- Emitter Cut-Off Current I EBO -0.1 µA V EB=-3V, I E=0 Collector-Emitter Saturation Voltage V CE(sat) -0.5 V I C=-20mA, I B=-2mA* Base-Emitter Saturation Voltage V BE(sat) -0.9 V I C=-20mA, I B=-2mA* Static Forward Current Transfer Ratio h FE 25 40 25 Transition Frequency fT 50 Output Capacitance C obo I C=-1mA, V CE=10V* I C=-10mA, V CE=10V* I C=-30mA,V CE=-10V* 6 MHz I C=-10mA, V CE=-20V f=20MHz pF V CB=-20V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% TBA FMMTA92 60 fT Transition Frequency (MHz) hFE Static Forward Current Transfer Ratio TYPICAL CHARACTERISTICS VCE=10V 50 40 0.1 10 1.0 100 VCE (sat) Collector-Emitter Saturation Voltage(Volts) VCE=20V 130 110 90 70 50 30 1.0 fT vs IC 3.0 IC / IB=10 1.0 0 10 10 IC-Collector Current (mA) hFE v IC 1.0 150 0.1 IC-Collector Current (mA) 2.0 170 100 IC-Collector Current (mA) VCE(sat) vs IC TBA 100