SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT593 ISSUE 3 - NOVEMBER 1995 COMPLEMENTARY TYPE FMMT493 PARTMARKING DETAIL - 593 TYPICAL CHARACTERISTICS 0.4 0.4 +25 ° C B A B 0.3 C B IC/IB=50 0.2 0.2 0.1 0.1 10mA 1mA 100mA 1A 10A 0 10mA 1mA 200 1.0 CE=5V V 1A 10A +100 °C C B I /I =10 -55 °C +25 °C +100 °C -55 °C 0.2 0 1mA 10mA 100mA 1A 10A 0 10mA 1mA 100mA 1A 10A IC-Collector Current VBE(sat) v IC IC-Collector Current hFE V IC 10 CE=5V V 1.0 0.6 0.1 100ms 100mA 10ms 0.01 0.2 10mA DC 1s -55 °C +25 °C +100 °C 0.4 1mA VALUE UNIT VCBO -120 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Base Current IB -200 mA 500 mW -55 to +150 °C Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1A 10A IC-Collector Current VBE(on) v IC 1ms SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO -120 V IC=-100µ A V(BR)CEO -100 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A Collector Cut-Off Current ICBO -100 nA VCB=-100V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector-Emitter Cut-Off Current ICES -100 nA VCES=-100V Emitter Saturation Voltages VCE(sat) -0.2 -0.3 V V IC=-250mA,IB=-25mA* IC=-500mA IB=-50mA* VBE(sat) -1.1 V IC=-500mA,IB=-50mA* -1.0 V Base-Emitter Turn-on Voltage VBE(on) Static Forward Current Transfer Ratio hFE µ 100 s 0.001 0.1V 1V 10V VCE - Collector Emitter Voltage (V) Safe Operating Area 100V MAX. UNIT CONDITIONS. Collector-Emitter Breakdown Voltage 1 0.8 0 SYMBOL Collector-Base Voltage PARAMETER 0.6 +25 °C PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.8 0.4 100 100mA IC-Collector Current VCE(sat) v IC IC-Collector Current VCE(sat) v IC 300 ABSOLUTE MAXIMUM RATINGS. -55 °C +25 °C +100 °C I /I =10 400 E C I /I =10 0.3 0 FMMT593 ✪ 100 100 100 50 300 50 Transition Frequency fT Output Capacitance Cobo MHz IC=-50mA, VCE=-10V f=100MHz 5 pF *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 142 3 - 141 IC=-1mA, VCE=-5V* IC=-1mA, VCE=-5V IC=-250mA,VCE=-5V* IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V, VCB=-10V, f=1MHz SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT593 ISSUE 3 - NOVEMBER 1995 COMPLEMENTARY TYPE FMMT493 PARTMARKING DETAIL - 593 TYPICAL CHARACTERISTICS 0.4 0.4 +25 ° C B A B 0.3 C B IC/IB=50 0.2 0.2 0.1 0.1 10mA 1mA 100mA 1A 10A 0 10mA 1mA 200 1.0 CE=5V V 1A 10A +100 °C C B I /I =10 -55 °C +25 °C +100 °C -55 °C 0.2 0 1mA 10mA 100mA 1A 10A 0 10mA 1mA 100mA 1A 10A IC-Collector Current VBE(sat) v IC IC-Collector Current hFE V IC 10 CE=5V V 1.0 0.6 0.1 100ms 100mA 10ms 0.01 0.2 10mA DC 1s -55 °C +25 °C +100 °C 0.4 1mA VALUE UNIT VCBO -120 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Base Current IB -200 mA 500 mW -55 to +150 °C Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1A 10A IC-Collector Current VBE(on) v IC 1ms SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO -120 V IC=-100µ A V(BR)CEO -100 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A Collector Cut-Off Current ICBO -100 nA VCB=-100V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector-Emitter Cut-Off Current ICES -100 nA VCES=-100V Emitter Saturation Voltages VCE(sat) -0.2 -0.3 V V IC=-250mA,IB=-25mA* IC=-500mA IB=-50mA* VBE(sat) -1.1 V IC=-500mA,IB=-50mA* -1.0 V Base-Emitter Turn-on Voltage VBE(on) Static Forward Current Transfer Ratio hFE µ 100 s 0.001 0.1V 1V 10V VCE - Collector Emitter Voltage (V) Safe Operating Area 100V MAX. UNIT CONDITIONS. Collector-Emitter Breakdown Voltage 1 0.8 0 SYMBOL Collector-Base Voltage PARAMETER 0.6 +25 °C PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.8 0.4 100 100mA IC-Collector Current VCE(sat) v IC IC-Collector Current VCE(sat) v IC 300 ABSOLUTE MAXIMUM RATINGS. -55 °C +25 °C +100 °C I /I =10 400 E C I /I =10 0.3 0 FMMT593 ✪ 100 100 100 50 300 50 Transition Frequency fT Output Capacitance Cobo MHz IC=-50mA, VCE=-10V f=100MHz 5 pF *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 142 3 - 141 IC=-1mA, VCE=-5V* IC=-1mA, VCE=-5V IC=-250mA,VCE=-5V* IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V, VCB=-10V, f=1MHz